激光三角法测量技术在光刻机中的应用

介绍了激光三角法测量原理和分类,对不同类型进行了分析比较。介绍了CCD的激光三角法高度测量系统在光刻机中的应用及在高度测量时实时和映射两种工作模式。在应用中可以针对不同的测量对象表面的光学特征,使用对应的表格,提高其测量的适应性和测量效率。     

用于光刻机模拟运动的精密工件台宏动定位系统研制

为给步进扫描光刻机的设计研究提供理论指导,解决光刻机工件台宏动定位平台的设计和控制问题,根据工业应用中步进扫描光刻机的运动特点和工作要求,设计了一种H型精密工件台宏动定位系统和同步控制方案。试验结果表明,其各项性能指标均满足设计要求,对指导实际工业应用具有一定的参考价值。     

0.1μmT型栅PHEMT器件

通过电子束和接触式曝光相结合的混合曝光方法 ,并利用复合胶结构 ,一次电子束曝光制作出具有 T型栅的 PHEMT器件 ,并对 0 .1μm栅长 PHEMT器件的整套工艺及器件性能进行了研究 .形成了一整套具有新特点的PHEMT器件制作工艺 ,获得了良好的器件性能 (ft=93.97GHz;gm=6 90 m S/mm ) .     

基于低能电子束的光刻技术

讨论了聚焦电子束曝光中的邻近效应问题,阐述了扫描隧道显微镜的原理和工作方式。把扫描隧道显微技术用于低能电子束的光刻,不仅能提高图形的分辨率,而且使电子束加工工艺不再局限于真空环境。对曝光电子的能量和线条宽度之间的关系进行了分析。     

Spontaneous Formation of Ordered Lateral Patterns in Polymer Thin‐Film Structures

The understanding of the lateral morphology stability of thin polymer devices is of fundamental importance. In this work, the lateral morphology in a model system consisting of thin polymer films capped with thin metal layers on a Si substrate is investigated. When the model system is heated above a critical temperature, a characteristic surface topographic structure is observed that has a well‐defined periodicity but random orientation. It is shown that the minimum temperature, T_min, required for the surface pattern to be observed decreases with increasing polymer‐film thickness. Increasing either the metal‐ or polymer‐layer thickness increases the characteristic wavelength of the topography. It is believed that the dominating driving force for the surface corrugated‐pattern formation is the thermal‐expansion‐coefficient mismatch of the capping layer and the substrate. A theoretical model based on local bending of a thin, stiff surface film on a thin, elastic medium is used to provide a quantitative analysis of the surface morphology. The calculated minimum temperature required for the surface morphology and the periodicity of the surface patterns to form are in strong agreement with the experimental results. By contrast, systems with prefabricated topographic patterns within any of the three layers (polymer, metal, substrate) produce highly anisotropic surface topographies aligned perpendicular to the prefabricated topographic structure. It is also found that, in a model system with pre‐patterned polymer films, a much higher critical temperature is required for the surface morphology to be observed. The changes in apparent stability and morphological orientation in the pre‐patterned systems can be understood as a result of the anisotropic release of the lateral surface stress during the heat treatment.     

用于IC封装的光刻设备

光刻是圆片级封装的一种最重要的工艺,无论是焊盘分布、焊凸形成、密封或其它新出现的需求,晶圆上精确的成像区域对每一种工序来讲是最重要的。评述了一些圆片级封装的光刻系统及为什么某些专门的设备能很好地适于应用,会是接近式光刻机、步进投影光刻机还是一些替代设备在未来的几年内来满足这种需求?我们将探索这种可能性。     

Photolithographic Route to the Fabrication of Micro/Nanowires of III–V Semiconductors

Nano/microwires of semiconducting materials (e.g., GaAs and InP) with triangular cross‐sections can be fabricated by “top–down” approaches that combine lithography of high‐quality bulk wafers (using either traditional photolithography or phase‐shift optical lithography) with anisotropic chemical etching. This method gives good control over the lateral dimensions, lengths, and morphologies of free‐standing wires. The behaviors of many different resist layers and etching chemistries are presented. It is shown how wire arrays with highly ordered alignments can be transfer printed onto plastic substrates. This “top–down” approach provides a simple, effective, and versatile way of generating high‐quality single‐crystalline wires of various compound semiconductors. The resultant wires and wire arrays have potential applications in electronics, optics, optoelectronics, and sensing.     

Nanometer scale patterning by scanning tunelling microscope assisted chemical vapour deposition

Single electron devices are of great interest for their possible replacement of transistors in memories. The key to the preparation of these components is the production of low capacitance dots, which requires a lithography step at nanometric scale. Direct patterning of metallic features at nanometric scale is possible by local decomposition of gaseous molecules under a scanning tunneling microscope (STM) tip, by application of a voltage of a few volts on the sample (STM assisted chemical vapour deposition). The gaseous molecules are dissociated by the high electric field (about 10⁷ V/cm) within the tip–sample gap. Rhodium lines and dots have been deposited on gold or silicon surfaces by decomposition of [Rh(PF₃)₂Cl]₂. The influence of the sample voltage was studied and the resolution limit of the technique was investigated.     

极紫外光刻真空工件台技术研究

在极紫外光刻系统中,真空工件台的运行精度、速度、加速度以及动态定位和扫描同步性能是影响整机成像质量、套刻精度和产率的重要因素。结合极紫外光刻机的工作原理和发展现状,论述了极紫外光刻机真空工件台系统的特征、组成及其关键技术。     

Microdroplet and Atomic Force Microscopy Probe Assisted Formation of Acidic Thin Layers for Silicon Nanostructuring

In this work, an aqueous acidic thin‐layer‐based strategy for fabricating nanostructures on silicon by using atomic force microscopy (AFM) nanolithography is presented. The approach involves the formation of microscale droplets via dilute hydrofluoride (DHF) etching, the conversion of the droplets to acidic thin layers by AFM‐probe scanning, and subsequent lithographic operations using a biased probe in the aqueous layers. By varying the concentration of the acidic DHF layers, the thin layers can facilitate the creation of both positive and negative patterns, such as oxide dots and Si pores, through anodic oxidation and dissolution. In particular, the anodic oxidation in the acidic media is associated with the field‐enhanced nonequilibrium dissociation of the weak electrolyte. The Si pore structure formation is related to the field‐assisted dissolution of anodic oxides and the Si substrate. The acidic‐layer‐based technique allows switching between different lithographic modes by changing the acidity of the DHF layers, and is complementary to bulk solution‐based and local meniscus‐based approaches in AFM nanolithography. In principle, this method can also be extended to other materials that have similar reactions with DHF.