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21.
卞志昕 《电子工业专用设备》2006,35(6):3-5,11
对2005年公布的《国际半导体就十时微蓝图》中光刻部分进行了介绍与分析,并与之前的版本进行比较,列出了光刻技术面临的挑战和潜在技术方案。最后指出,浸入式光刻、纳米压印、极紫外光刻和ML2将是未来几年重点研究对象。 相似文献
22.
蘸水笔刻蚀技术(DPN)影响因素分析 总被引:1,自引:2,他引:1
蘸水笔技术(Dip-Pen)是近年来发展起来的一种新的扫描探针刻蚀加工技术,有着广泛的应用前景.该技术是直接把弯曲形水层作为媒介来转移"墨汁"分子,在样品表面形成纳米结构.尖端曲率半径、针尖在基底表面滞留时间、针尖扫描速度、空气湿度、表面粗糙度等均会影响纳米结构的线宽.针尖在基底表面滞留时间与圆半径的平方成一次函数关系,线宽随着尖端半径的增大而变宽,扫描速度与线宽成反比关系.通过控制湿度可以控制"墨水"分子的转移速度,从而影响纳米结构的线宽.线宽随着样品表面粗糙度增加而变宽. 相似文献
23.
Eugene Chong Sarah Kim Jun-Hyuk Choi Dae-Geun Choi Joo-Yun Jung Jun-Ho Jeong Eung-sug Lee Jaewhan Lee Inkyu Park Jihye Lee 《Nanoscale research letters》2014,9(1):428
Fabrication of ZnO nanostructure via direct patterning based on sol-gel process has advantages of low-cost, vacuum-free, and rapid process and producibility on flexible or non-uniform substrates. Recently, it has been applied in light-emitting devices and advanced nanopatterning. However, application as an electrically conducting layer processed at low temperature has been limited by its high resistivity due to interior structure. In this paper, we report interior-architecturing of sol-gel-based ZnO nanostructure for the enhanced electrical conductivity. Stepwise fabrication process combining the nanoimprint lithography (NIL) process with an additional growth process was newly applied. Changes in morphology, interior structure, and electrical characteristics of the fabricated ZnO nanolines were analyzed. It was shown that filling structural voids in ZnO nanolines with nanocrystalline ZnO contributed to reducing electrical resistivity. Both rigid and flexible substrates were adopted for the device implementation, and the robustness of ZnO nanostructure on flexible substrate was verified. Interior-architecturing of ZnO nanostructure lends itself well to the tunability of morphological, electrical, and optical characteristics of nanopatterned inorganic materials with the large-area, low-cost, and low-temperature producibility. 相似文献
24.
针对曲面栅网器件的光刻工艺,提出了一种可动态调焦的激光直写式光刻系统,该系统将紫外激光器的光束经过整形扩束、动态z向调焦、x/y振镜、聚焦等单元使器件上相应位置涂覆的光刻胶直接感光,再经过显影、刻蚀等工艺直接制作出相应器件. 它可以应用到一些精度要求不太高的平面或非平面器件的光刻加工工艺, 取代传统的使用掩模版的光刻工艺或其它的加工工艺. 相似文献
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In this work, an aqueous acidic thin‐layer‐based strategy for fabricating nanostructures on silicon by using atomic force microscopy (AFM) nanolithography is presented. The approach involves the formation of microscale droplets via dilute hydrofluoride (DHF) etching, the conversion of the droplets to acidic thin layers by AFM‐probe scanning, and subsequent lithographic operations using a biased probe in the aqueous layers. By varying the concentration of the acidic DHF layers, the thin layers can facilitate the creation of both positive and negative patterns, such as oxide dots and Si pores, through anodic oxidation and dissolution. In particular, the anodic oxidation in the acidic media is associated with the field‐enhanced nonequilibrium dissociation of the weak electrolyte. The Si pore structure formation is related to the field‐assisted dissolution of anodic oxides and the Si substrate. The acidic‐layer‐based technique allows switching between different lithographic modes by changing the acidity of the DHF layers, and is complementary to bulk solution‐based and local meniscus‐based approaches in AFM nanolithography. In principle, this method can also be extended to other materials that have similar reactions with DHF. 相似文献
30.
Muhammad Mustafa Hussain Ed Labelle Gabe Gebara Naim Moumen 《Microelectronic Engineering》2007,84(4):594-598
International Technology Roadmap for Semiconductors 2003 projected nano-imprint lithography has the potential of high throughput, sub-20 nm resolution, and low cost [S.Y. Chou, P.R. Krauss, P.J. Renstrom, Appl. Phys. Lett. 67 (1995) 3144; Science 272 (1996) 85, J.A. Rogers, C. Mirkin, Mater. Res. Bull. 26 (2001)]. For nano-imprint lithography, a template with 1X resolution is required. The existing industrial infrastructure for supporting deep ultra violet 4X photo masks by e-beam and/or a laser beam scanning writer does not offer pitch (center-to-center distance of an array of patterned lines) less than ∼60 nm [<http://public.itrs.net/2003ITRS>]. For nano-imprint lithography to be accepted across the industry, a reproducible simple fabrication process to make a high resolution, single emboss template is essential [L. Jay Guo, J. Phys. D: Appl. Phys. 37 (2004) R123-R141]. Here we show, a general fabrication method and fabricated nano-imprint templates with sub-15 nm template line width and 10 nm pitch length through out the entire 200 mm wafer, varying the deposition thickness of multiple alternate films, using atomic layer deposition. Although multilayer nano-imprint templates and their exciting use have been demonstrated, [W.J. Dauksher et al., J. Vac. Sci. Technol. B 22 (2004) 3306, B. Heidari, et al., The 49th international conference on electron, ion and photon beam technology and nanofabrication, Orlando, Florida, 2005, William M. Tong, et al., Proc. SPIE 5751 (2005) 46-55, N.A. Melosh, A. Boukai, F. Diana, B. Gerardot, A. Badolato, P.M. Petroff, J.R. Heath, Science 300 (2003) 112] such a small pitch was not shown and either complex lattice mismatch-based epitaxially grown films or unconventional etch chemistry was used. The bare necessity was a simple and economical fabrication process for a high throughput nano-imprint template. In that context, we have developed a template fabrication process using classical micro-fabrication techniques. Successful use of these techniques made the template fabrication process simple, economical, and expedient. Also a novel technique to provide flexible and accurate alignment for nanowire patterning has been described. In this technique, nanowire patterning is accomplished on the entire wafer with a single impression. Industry level batch-fabrication of our scheme illustrates its reproducibility and manufacturability. We anticipate, this simple, economical and time saving technique will help researchers and developers to perform their experiment on nano-scale feature patterned substrates easily and conveniently. 相似文献