微机械制造中的三维立体光刻加工技术

文章介绍了微机械和微机电系统制造的一种重要方法-三维立体光刻技术方法的基本原理、加工技术及其应用.同时还介绍了立体光刻技术结合抗腐蚀层、牺牲层工艺加工微器件的原理、方法和应用.     

光刻机模拟工作台的精密隔振系统方案设计研究

提出了高精密设备光刻机模拟工作平台隔振系统的设计方法和系统结构;根据国内外现行的减振方法,建立了整个模拟工作台的结构模型;根据减振要求,选择了适当的减振器.由于光刻机所处激励环境的复杂性和系统内部存在的非线性,采用了主动控制方法BP神经网络 PID控制的主动控制方法来控制整个减振系统.     

High-Speed Parallel Plasmonic Direct-Writing Nanolithography Using Metasurface-Based Plasmonic Lens

Simple and efficient nanofabrication technology with low cost and high flexibility is indispensable for fundamental nanoscale research and prototyping. Lithography in the near field using the surface plasmon polariton (i.e., plasmonic lithography) provides a promising solution. The system with high stiffness passive nanogap control strategy on a high-speed rotating substrate is one of the most attractive high-throughput methods. However, a smaller and steadier plasmonic nanogap, new scheme of plasmonic lens, and parallel processing should be explored to achieve a new generation high resolution and reliable efficient nanofabrication. Herein, a parallel plasmonic direct-writing nanolithography system is established in which a novel plasmonic flying head is systematically designed to achieve around 15 nm minimum flying-height with high parallelism at the rotating speed of 8–18 m·s⁻¹. A multi-stage metasurface-based polarization insensitive plasmonic lens is proposed to couple more power and realize a more confined spot compared with conventional plasmonic lenses. Parallel lithography of the nanostructures with the smallest (around 26 nm) linewidth is obtained with the prototyping system. The proposed system holds great potential for high-freedom nanofabrication with low cost, such as planar optical elements and nano-electromechanical systems.     

50nm及50nm以下同步辐射X射线光刻光束线设计

X射线光刻相对于其他下一代光刻技术而言有许多优点,比如其工艺宽容度大、成品率高、景深大、曝光视场大、成本低等,更为重要的是,其技术已经比较成熟。对于100nm同步辐射X线光刻系统而言,它采用的波长通常为0．7-1．0nm,而当光刻分辨率达到50nm以下时,采用的同步辐射X射线波长范围应该为0．2—0．4nm。探讨了在北京同步辐射3B1A光刻束线上进行50nmX射线光刻的可能性。     

聚焦离子束曝光技术

聚焦离子束技术是一种集形貌观测、定位制样、成份分析、薄膜淀积和无掩模刻蚀各过程 于一身的新型微纳加工技术。它大大提高了微电子工业上材料、工艺、器件分析及修补的精度和速 度,目前已经成为微电子技术领域必不可少的关键技术之一。对聚焦离子束曝光技术作了介绍。     

Transistors Formed from a Single Lithography Step Using Information Encoded in Topography

This paper describes a strategy for the fabrication of functional electronic components (transistors, capacitors, resistors, conductors, and logic gates but not, at present, inductors) that combines a single layer of lithography with angle‐dependent physical vapor deposition; this approach is named topographically encoded microlithography (abbreviated as TEMIL). This strategy extends the simple concept of ‘shadow evaporation’ to reduce the number and complexity of the steps required to produce isolated devices and arrays of devices, and eliminates the need for registration (the sequential stacking of patterns with correct alignment) entirely. The defining advantage of this strategy is that it extracts information from the 3D topography of features in photoresist, and combines this information with the 3D information from the angle‐dependent deposition (the angle and orientation used for deposition from a collimated source of material), to create ‘shadowed’ and ‘illuminated’ regions on the underlying substrate. It also takes advantage of the ability of replica molding techniques to produce 3D topography in polymeric resists. A single layer of patterned resist can thus direct the fabrication of a nearly unlimited number of possible shapes, composed of layers of any materials that can be deposited by vapor deposition. The sequential deposition of various shapes (by changing orientation and material source) makes it possible to fabricate complex structures—including interconnected transistors—using a single layer of topography. The complexity of structures that can be fabricated using simple lithographic features distinguishes this procedure from other techniques based on shadow evaporation.