高斯电子束曝光系统

电子束光刻技术是纳米级加工技术的主要手段,在纳米器件加工、掩模制造、新器件新结构加工中扮演举足轻重的角色。虽然现在最先进的电子束聚焦技术可以得到几个纳米的电子束斑,但是由于邻近效应问题,依然很难使用电子束光刻技术得到接近其理论极限的纳米尺度图形,对电子束曝光系统的基本原理及其邻近效应校正技术进行了研究,并得到一些比较理想的曝光结果。     

IH工艺在微机械中的应用

介绍了微机械加工中的一项崭新技术--IH工艺,即集成聚合物固化立体光刻。这一技术是具有大纵横比的真三维立体加工工艺,而且可以加工聚合物和金属等多种材料。最后作者把IH工艺同LIGA工艺等传统工艺方法加以类比,提出了IH工艺的应用前景。     

新型室温中远波段红外探测器的关键工艺研究

介绍了一种基于MEMS技术的新型室温中远红外波段硅基电容式红外探测器原理和制作工艺过程，并详细介绍了针对单面光刻机而采用的对准孔双面对准和键合对准技术、浓硼扩散FLPW腐蚀停止技术制备超薄敏感硅膜以及薄膜的疏水处理等关键工艺。还对各环节所遇到的问题和其相应的解决方法进行了详细地阐述。     

微细加工中的快速复型研究

论述了在集成电路和微电子机械微细制造中的光刻技术,为了实现0.1μm甚至更小特征尺寸的光刻而采用的快速复型技术;这种技术吸收了电子束光刻和压印光刻的优点,同时又弥补了它们各自相应的缺点和不足,解决了光刻环节中光刻速度与特征尺寸小的矛盾,实现了大面积、快速、低成本和高精度的微细加工。     

Feasibility studies on pyroelectric emission for lithography application

Abstract

Electron beam patterns of ferroelectric switching emission, dielectric emission, and field emission were studied by patterning images on electron beam resist. It was observed that the pyroelectric emission is most acceptable for an 1:1 electron projection lithography application. Effects of the initial kinetic energy of electrons and distance between the emitter and the collector on pattern resolution were discussed. An 1:1 electron projection lithography was demonstrated by patterned emitter.     

Multi-step virtual metrology for semiconductor manufacturing: A multilevel and regularization methods-based approach

In semiconductor manufacturing, wafer quality control strongly relies on product monitoring and physical metrology. However, the involved metrology operations, generally performed by means of scanning electron microscopes, are particularly cost-intensive and time-consuming. For this reason, in common practice a small subset only of a productive lot is measured at the metrology stations and it is devoted to represent the entire lot. Virtual Metrology (VM) methodologies are used to obtain reliable predictions of metrology results at process time, without actually performing physical measurements. This goal is usually achieved by means of statistical models and by linking process data and context information to target measurements. Since semiconductor manufacturing processes involve a high number of sequential operations, it is reasonable to assume that the quality features of a given wafer (such as layer thickness and critical dimensions) depend on the whole processing and not on the last step before measurement only. In this paper, we investigate the possibilities to enhance VM prediction accuracy by exploiting the knowledge collected in the previous process steps. We present two different schemes of multi-step VM, along with dataset preparation indications. Special emphasis is placed on regression techniques capable of handling high-dimensional input spaces. The proposed multi-step approaches are tested on industrial production data.