残留奥氏体对1500MPa级新型低碳Mn-Si-Cr系合金钢冲击韧度的影响

15 0 0MPa级无碳化物贝氏体 马氏体复相钢的第一类回火脆性开始温度高于 36 0℃。实验表明 ,这并非由于贝氏体 马氏体复相韧化 ,而是与无碳化物贝氏体中的膜状残留奥氏体有关。无碳化物贝氏体中机械稳定性较高的残留奥氏体可能是导致无碳化物贝氏体 马氏体复相钢第一类回火脆性开始温度升高的直接原因。     

全方位为顾客服务

介绍了Dohmen公司的发展过程，目前的状况及公司的宗旨。     

实时时钟芯片 M48T86 及其应用

M48T86是意法半导体公司（ST公司）生产的一种实时时钟/日历芯片。它具有精确计时、定时报警输出等功能，由于其内置128字节的非易失性RAM，因而具有功能强、使用方便等特点。文中详细介绍了M48T86的引脚功能，性能特点和主要参数，给出了其在检测系统中的应用电路和程序设计方法。     

In Situ Formation of a Novel Nanocomposite Structure Based on MCM-41 and Polyethylene

M41S materials are prepared by in situ assembly of inorganic precursors and organic template and can be viewed as nanocomposites of the siliceous phase and organic surfactant. Calcination of these precursors gives the M41S materials that have been used to prepare novel nanocomposite structures, in which the organic phase inside the nano-sized pores is isolated by the nano-sized inorganic pore walls. The nanocomposite structures can be formed by in situ polymerization of monomers inside the channels. Polymerization of ethylene takes place inside the nano-sized pores, producing the desired nanocomposite structure. The resulting polyethylene was found to be a mixture of crystalline and amorphous phases.     

镀液中SiC含量和粒径对Ni-P-SiC复合化学镀层性能的影响

采用化学镀方法制备了Ni P SiC复合镀层 ,系统研究了镀液中SiC含量和粒径对镀层结构及显微硬度的影响。结果表明 ,镀层中SiC析出量随镀液中SiC含量的增加而增加 ,在SiC含量一定的情况下 ,当SiC粒径为 7.0 μm时 ,析出量最大 ;镀液中SiC的含量和粒度对原始镀层的硬度影响不大 ,但对 4 0 0℃热处理后的镀层硬度有显著影响     

8-R-9苄基-9H-嘌呤衍生物的合成研究

采用 (Ph3 P) 2 PdCl2 为催化剂 ,DMF为溶剂 ,对 8 碘 9 苄基 9H 嘌呤与有机锡试剂RSnBu3 (R=乙烯基、2 噻吩基、2 呋喃基、苯乙炔基和苯基等 )之间的Stille偶合反应进行了研究 ,合成出了5种 8位取代的嘌呤衍生物。在反应温度为 80℃ ,n(8 碘 9 苄基 9H 嘌呤 )∶n (RSnBu3 )∶n〔(Ph3 P) 2 PdCl2 〕 =1 0∶1 2∶0 0 5的较佳工艺条件下 ,产品收率 4 1%～ 91%。用1H NMR、13 C NMR和MS对产物进行了表征     

ISDN PBX及X.25网关的管理

本文介绍了ＩＳＤＮ用户一网络接口的管理模型，分析了ＰＢＸ、Ｘ．２５网关的管理功能，对协议测试，管理通信进行了研究并提出模型及实现原则。     

Atmospheric and low pressure shadow masked MOVPE growth of InGaAs(P)/InP and (In)GaAs/(Al)GaAs heterostructures and quantum wells

The shadow masked growth technique is presented as a tool to achieve thickness and bandgap variations laterally over the substrate during metalorganic vapor phase epitaxy. Lateral thickness and bandgap variations are very important for the fabrication of photonic integrated circuits, where several passive and active optical components need to be integrated on the same substrate. Several aspects of the shadow masked growth are characterized for InP based materials as well as for GaAs based materials. Thickness reductions are studied as a function of the mask dimensions, the reactor pressure, the orientation of the masked channels and the undercutting of the mask. The thickness reduction is strongly influenced by the mask dimensions and the reactor pressure, while the influence of the orientation of the channels and the amount of undercutting is only significant for narrow mask windows. During shadow masked growth, there are not only thickness variations but also compositional variations. Therefore, we studied the changes in In/Ga and As/P ratios for InGaAs and InGaAsP layers. It appears that mainly the In/Ga-ratio is responsible for compositional changes and that the As/P-ratio remains unchanged during shadow masked growth.     

Electrostatic polymer processing of isotactic poly(4-methyl-1-pentene) fibrous membrane

Isotactic poly(4-methyl-1-pentene) (P4M1P) is a widely used polymer in industrial applications and specifically, in medical products. Producing micro- or nanofibers would expand the usefulness of P4M1P to a broad range of medical applications. The choice and quality of solvent for the solution used for electrospinning can have a dramatic effect on the spinnability of fibers and on their morphological appearance. In this study, four solvent systems: cyclohexane, cyclohexane/acetone mixture, cyclohexane/dimethyl formamide (DMF) mixture and cyclohexane/acetone/DMF mixture have been investigated. As demonstrated by FE-SEM, electrospun fibers with different morphologies including round, twisted with a roughened texture, curled and twisted-ribbon shapes were formed. The fiber shape and morphology depended strongly on the type and amount of non-solvent used.