Deposition mechanisms in langmuir-blodgett films

As part of a study of the possible application of polymerisable Langmuir-Blodgett (LB) films as ultra-fine-line e-beam resists, an investigation of the variation of film structure of 22-tricosenoic acid with differing deposition conditions has been made. Unexpected effects with significant implications for deposition speed and resist sensitivity have been observed, and the new techniques for film characterisation developed during the investigation have resulted in a revised model of deposition explaining the observed independence of the disorder causing optical scattering and the macroscopic features observed by polarised microscopy.     

长脉冲激光沉积原位生成YBaCuO超导膜

用长脉冲激光(脉冲宽度150μs,波长1.06μm)辐照高温烧结的YBa_2Cu_3O_(7-x)靶,在6Pa的氧气压强下,巳在(100)YSZ单晶衬底上原位生成YBa_2Cu_(?)O_(7-x)超导膜。衬底置于750℃的加热器上,衬底与靶之间的距离5cm,用该法制得的薄膜光亮坚实,正常态呈金属性,零电阻温度为84.7K。用XRD和SEM对薄膜进行了分析研究。     

脉冲激光沉积SrBi2Ta2O9铁电薄膜电容特性研究

用ＰＬＤ方法成功地制备了ＳＢＴ铁电薄膜，并制作成Ｐｔ／ＳＢＴ／Ｐｔ薄膜电容器。ＳＢＴ薄膜的晶面取向以（００８）和（１１５）为主。在５Ｖ电压下，极化反转，并且得到较饱和的电滞回线，剩余极化强度和矫顽电场分别为８４μＣ／ｃｍ２和５７ｋｖ／ｃｍ。ＩＶ特性测试显示两个对称的双稳峰，并得到零电压下，面积为３１４×１０４μｍ２，厚度为０３５μｍ的电容器，电容约为５６０ｐＦ，介电常数约为６００。疲劳测试表明Ｐｔ／ＳＢＴ／Ｐｔ具有优良的抗疲劳特性。     

Review of The chemically dependent: Phases of treatment and recovery.

Reviews the book, The chemically dependent: Phases of treatment and recovery edited by Barbara C. Wallace (see record 1992-98403-000). While this book is ambitious, interesting, educational, and useful, it is also disappointing, repetitious, and incomplete. Because it tries to accomplish so much, it may appear to have succeeded too little. This book is organized around, and explicative of, several basic ideas which might have been controversial if not heretical had this book been published ten years ago. Section I, purporting to link specific "phases of recovery" to particular forms and functions of treatment, will certainly be useful for novice clinicians but falls short of its overstated goals and is thereby disappointing. Section II is a collection of moderately redundant chapters describing the etiology and treatment of substance abusers from the viewpoints of psychoanalytic, psychodynamic, ego psychology, and object-relations theorists and therapists. Section III focuses on cognitive-behavioral, self-help, and relapse-prevention treatments. Section IV is quite uneven in quality of writing and applicability of content, and could have benefited from closer editorial scrutiny or selectivity. The final section focuses on special needs of particular subpopulations of substance abusers: African-Americans, prison inmates, HIV/AIDS patients, persons who are homeless, those who have been sexually and physically abused, and others. According to the reviewer this is not the best book on substance abuse treatment, but it does present some clinically useful ideas and it is worth reading. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.     

Synthesis of nano particle of inorganic oxides by polymer matrix

Ultrafine (⩽ 150 nm) powders of spinels [MFe₂O₄ where M = Ni(II), Co(II) and Zn(II)]; rare-earth orthoferrites [RFeO₃ where R = Sm, Nd and Gd], and rare-earth garnets [R₃Fe₃O₁₂ where R = Sm, Nd and Gd] with good purity and chemical homogeneity were prepared through two new versatile chemical routes. The first route involved the coprecipitation of the desired metal nitrates from their aqueous solution, in presence of a water soluble polymer-polyvinyl alcohol (PVA), by triethyl ammonium carbonate solution. The other process involved complete evaporation of a mixture of optimum amounts of PVA and the desired aqueous metal nitrate solutions, with and without the addition of optimum amounts of urea when the mixture was evaporated to a pasty mass. In addition, detailed study on the reported potassium ferricyanide route was also carried out for the production of the rare-earth orthoferrite powders. The various precursor as well as the heat-treated mixed-oxide powders, prepared through each of the routes, were compared by the physical characterization studies involving thermal gravimetry and differential scanning calorimetry, infrared spectroscopy, X-ray powder diffraction, transmission electron microscopy, and room temperature magnetic measurements.     

微波等离子体化学气相沉积的 a-Si∶H 性能研究

本文着重对微波等离子体化学气相沉积法高速沉积的 a-Si∶H 膜的物理性能进行评价研究.测量了沉积膜的光电性能、暗电导激活能、光禁带宽度、光吸收特性、沉积膜中悬键态密度以及氢含量等,并讨论沉积条件对膜性能的影响.结果表明,在沉积速率高达30～90(?)/s 情况下,膜的光电导(光照强度10~5Lux)与暗电导比值可达10~3～10~5,暗电导率从10~(-3)到10~(-11)((?)cm)~(-1),其激活能在0.23～0.88eV 之间(0～200℃温度范围内),光禁带宽度为1.40～2.20eV,氢含量约为2～20%.     

The fracture stress of chemical vapour deposited diamond

The factors which control the fracture stress of chemical vapour deposited diamond have been studied using the 3-point bend geometry. Fracture stress values of 300–800 MPa for the growth side and 600–1200 MPa for the nucleation side were recorded for samples of thickness 0.4–2.4 mm. A Weibull modulus of 23 was calculated for the growth surface data, showing that the fracture stress variability was low for a brittle material. A theory based on these results demonstrates that the material behaviour is remarkably simple, depending only on the grain size and the sample thickness, regardless of wide variations in other parameters such as optical transmission and stress state. The paper also contains a possible explanation for this well-defined behaviour based on microstress variations resulting from differences in defect density in different growth sectors within a grain.     

等离子体浸没式离子注入-离子束增强沉积TiN膜研究

本文采用一种新型的等离子体浸没式离子注入 离子束增强沉积的技术(PIII IBAD),在Cr12MoV钢基体上制备出了TiN膜,对沉积膜的组织进行了光电子能谱分析,并对沉积膜进行了硬度检测、摩擦试验及磨痕形貌分析。试验结果表明,沉积膜中的组织为TiN、TiO2和Ti2O3,TiN膜具有高达Hv3200的高硬度和极其优良的摩擦性能。     

Provision of accuracy for quantitative determination of small amounts of components: Principles of resolving the problem and their realization

Versions are suggested for resolving the problem of monitoring the accuracy of determining small amounts of components in samples of substances and materials. __________ Translated from Izmeritel'naya Tekhnika, No. 1, pp. 52–57, January, 2006.