Design and analysis of quantized controllable doped left-handed materials

Two kinds of controllable doped left-handed materials (DLHMs) were designed by inserting inductors and capacitors into the traditional left-handed material (LHM) as heterogeneous elements respectively,which are DLHM with inductors (LDLHM) and DLHM with capacitors (CDLHM).The characteristics of transmission spectrum were studied by using finite-difference time-domain method (FDTD).Compared with the traditional LHM,the resonance strength of the LDLHM is weakened and the pass-band is narrowed,but with the increase of the value of the inserted inductors,the bandwidth is expanded.As capacitors inserted into the LHM,the pass-band of the CDLHM is expanded,but the pass-band is shifted to low frequency and the bandwidth is narrowed with the increase of the value of the capacitors,meanwhile,a new generated pass-band is also shifted to low frequency.Therefore,a quantized controllable doped left-handed material can be achieved.     

交错并联双向DC/DC变换器Buck模式下的耦合电感设计规则

针对目前交错并联双向DC/DC变换器中耦合电感设计规范不全面这一问题,以三相交错并联双向DC/DC变换器为例,在Buck模式下占空比在1/3~2/3范围内,研究变换器采用分立电感和耦合电感,对稳态电流纹波及暂态电流的响应速度的影响。通过对比,证明采用耦合电感具有减小稳态相电流纹波或者增大暂态总输出电流响应速度的作用,且占空比越接近1/3和2/3,耦合越强,效果越明显。给出一个耦合电感的设计规则,在这一规则下选择电感的耦合系数,既能减小变换器的稳态相电流纹波,又能提高暂态总输出电流响应速度。最后,通过实验证明了耦合电感具有提高暂态总输出电流响应速度和减小稳态相电流纹波的作用,从而证明了设计规范的正确性。     

耦合电感式新型交错Boost软开关变换器研究

提出一种新型的耦合电感式交错并联Boost软开关变换器的拓扑结构,并对相应控制方法及耦合电感耦合系数进行设计。该变换器利用耦合电感漏感与开关管输出电容之间的谐振,令开关管在占空比大于0.5时实现零电压开通,在占空比小于0.5时实现近似零电流开通,降低了开关损耗;而且没有添加额外器件,不会对变换器功率密度造成影响。详细给出了电路拓扑结构、工作原理及工作过程分析,对表征电路能量传递的有效占空比进行了讨论,对影响软开关效果的耦合电感耦合系数进行了分析与设计,最后在SIMetrix环境下进行仿真,并搭建了250 W原理样机,仿真与试验结果验证了理论分析的正确性。     

耦合电感宽输入有源升降压逆变器

传统升压电路由于占空比的限制,升压能力有限,要使输出电压恒定,输入直流电压不能太低。提出了一种耦合电感宽输入有源升降压逆变器,分析了电路的工作模态、开关管应力和电路增益。通过设置耦合电感的匝比,在输入电压较低时,该电路可以实现较高幅值的交流电压输出;输入电压较高时可以实现降压逆变。适时修正耦合电感Boost AC/AC电路的占空比,可以使电路增益保持恒定。仿真和实验结果表明该电路能够在较宽的输入电压范围内实现升压和降压逆变。     

A 1.6-GHz Current-Controlled Oscillator with Integrated Inductor

A 1.6 GHz fully monolithic silicon bipolar LC current-controlledoscillator (CCO) circuit implemented in a 0.8 µmBiCMOS technology and characterized for use in wireless applicationsis presented. The integrated resonator circuit uses high speed(18 GHz) bipolar transistors, a 14 nH rectangular spiral inductorfabricated by using a standard 2-level metallization, and a widebandpn-varactor structure. Additionally, to save chip area, the integratedcapacitors were fabricated below the planar inductor structure.In order to aid the IC design, a simple equivalent circuit modelfor the integrated inductor on silicon was developed and tested.The measured quiescent power dissipation of the integrated CCOcircuit is 1.9 mW to 5.5 mW from a supply of 2–;3 V, anda typical phase noise varies from –82 to –86 dBc/Hz at 100 kHz offset.     

我国片式电感器供求现状及对策

１９９４年，全世界片式电感器的需求量约为１００～１２０亿只／月。１９９５年我国片式电感器的市场需求量约为５亿只。本世纪末，估计我国片式电感器需求量将高于１５亿只，目前，庞大的市场基本上由国外产品占据，因此国内投资建立片式电感器生产厂大有前途。     

“E王E”形耦合电感器的设计及其在交错并联磁集成双向DC-DC变换器中的应用

为了克服传统EE形耦合电感器的气隙过于集中、磁压和磁通分布不均匀、气隙离绕组过近等缺点,提出一种"E王E"形耦合电感器结构,建立了磁路模型,给出了设计方法。通过仿真和实验证明,该结构增加了一条并联气隙磁路从而使磁路的磁压和磁通分布比较均匀,磁路的磁阻减小,电感因数和耦合强度增大;气隙远离绕组从而减小气隙扩散磁通和旁路磁通及绕组涡流损耗;绕组绕在长宽比较小的铁心中柱上从而减小绕组长度;所给出的改进磁路模型和设计方法可以用于这种耦合电感器的设计;将这种耦合电感器用于交错并联磁集成双向DC-DC变换器,具有输出电压纹波小、电感电流波形平滑、毛刺少、开关管开通和关断时的电流尖峰小等优点,并且可以有效地提高电路的轻载效率。     

Poles–zeros analysis and broadband equivalent circuit for on‐chip spiral inductors

Poles and zeros of the transfer function determine the performance and the key features of the circuit network, such as phase, gain, and bandwidth. In this paper, the contribution of the poles and zeros to the transfer function has been shown. The factors η_p and η_z are proposed to account for the poles contribution to the peak and the zeros contribution to the valley of transfer function, respectively. A novel broadband equivalent circuit combining the physics‐based circuit model and behavioral macro‐model (black‐box) network is proposed for accurately characterizing on‐chip spiral inductors. The physics‐based elements are extracted using the linear dependence of a set of characteristic functions on variables (such as ω²) or other functions in a certain frequency range. The macro‐model network described by rational functions is determined using vector fitting approaches. The proposed modeling method is validated by the on‐chip spiral inductor fabricated with 0.13‐µm SiGe BiCMOS aluminum process. Excellent agreements are obtained between the measured data and calculation for the proposed model up to 40 GHz. Copyright © 2015 John Wiley & Sons, Ltd.     

Active grounded inductor circuit

In this article, a novel active grounded inductor is proposed. The circuit utilises two optical amplifiers in a simple configuration that has a buffered output capable of delivering relatively high currents. The circuit possesses good characteristics with inductance error and quality factor that with compensation are better than the corresponding parameters for the Antoniou GIC. Experimental results confirm the theoretical analysis.