全文获取类型
收费全文 | 10239篇 |
免费 | 308篇 |
国内免费 | 107篇 |
专业分类
电工技术 | 51篇 |
综合类 | 377篇 |
化学工业 | 2941篇 |
金属工艺 | 235篇 |
机械仪表 | 116篇 |
建筑科学 | 385篇 |
矿业工程 | 81篇 |
能源动力 | 655篇 |
轻工业 | 1856篇 |
水利工程 | 51篇 |
石油天然气 | 342篇 |
武器工业 | 5篇 |
无线电 | 1757篇 |
一般工业技术 | 1329篇 |
冶金工业 | 178篇 |
原子能技术 | 58篇 |
自动化技术 | 237篇 |
出版年
2024年 | 16篇 |
2023年 | 69篇 |
2022年 | 138篇 |
2021年 | 280篇 |
2020年 | 209篇 |
2019年 | 153篇 |
2018年 | 154篇 |
2017年 | 335篇 |
2016年 | 360篇 |
2015年 | 345篇 |
2014年 | 738篇 |
2013年 | 662篇 |
2012年 | 738篇 |
2011年 | 829篇 |
2010年 | 571篇 |
2009年 | 703篇 |
2008年 | 511篇 |
2007年 | 594篇 |
2006年 | 496篇 |
2005年 | 396篇 |
2004年 | 347篇 |
2003年 | 309篇 |
2002年 | 284篇 |
2001年 | 211篇 |
2000年 | 205篇 |
1999年 | 189篇 |
1998年 | 144篇 |
1997年 | 145篇 |
1996年 | 116篇 |
1995年 | 89篇 |
1994年 | 85篇 |
1993年 | 48篇 |
1992年 | 49篇 |
1991年 | 34篇 |
1990年 | 22篇 |
1989年 | 18篇 |
1988年 | 18篇 |
1987年 | 17篇 |
1986年 | 8篇 |
1985年 | 9篇 |
1984年 | 4篇 |
1983年 | 3篇 |
1982年 | 2篇 |
1979年 | 1篇 |
排序方式: 共有10000条查询结果,搜索用时 0 毫秒
101.
The doping of organic semiconductors is a promising way for both improving the charge carrier transport and tuning the energy level alignment at interfaces. We study the influence of p-doping of the low band gap polymer PCPDTBT with F4-TCNQ on the energy level alignment in a prototype organic solar cell structure with ITO as an electrode material and the fullerene C60 as electron acceptor material using Ultraviolet and X-ray photoelectron spectroscopy. As a consequence of the doping, a Quasi-Ohmic contact at the interface to ITO is formed, whereas the energy level alignment to C60 is almost not affected. In contrast to a related system, we observe a depletion of the dopant at the polymer surface. The change of the energy level alignment only at the electrode interface might be advantageous for the application in organic solar cell devices. 相似文献
102.
在不同条件下采用电容耦合氧等离子体处理用于有机电致发光(OLED)的ITO基片,使用接触电势法测量了基片表面功函数的改变。研究发现,氧等离子体处理可以有效地提高ITO表面的功函数。X射线光电子能谱的测量揭示了其本质:氧等离子体处理可以提高表面氧原子的含量,同时降低ITO表面锡/铟原子的比例,由此导致了ITO表面功函数的提高。高功函数的ITO可降低空穴由ITO向OLED空穴传输层中注入空穴的势垒,从而提高OLED器件的性能。进一步的基于联苯二胺衍生物NPB/8-羟基喹啉铝(Alq3)的标准器件的研究证明了这一点。研究同时发现,在相同的真空和氧压条件下,保持处理时间不变,随着射频激发功率的升高,ITO表面功函数会逐渐降低。这个功函数的降低,使得OLED器件的驱动电压升高且电流效率减小。因此使用电容耦合氧等离子体处理的ITO来制备OLED器件,需要在优化的条件下进行,以达最佳效果。在本实验系统下处理条件为射频功率100W、时间25s。 相似文献
103.
104.
Alexandre Mantovani Nardes Ren A. J. Janssen Martijn Kemerink 《Advanced functional materials》2008,18(6):865-871
The well‐known enhanced conductivity of poly(3,4‐ethylenedioxythiophene):poly(4‐styrenesulfonate) (PEDOT:PSS) thin films that is obtained by addition of high‐boiling solvents like sorbitol to the aqueous dispersion used for film deposition is shown to be associated with a rearrangement of PEDOT‐rich clusters into elongated domains, as evidenced from STM and AFM. Consistently, temperature dependent conductivity measurements for sorbitol‐treated films reveal that charge transport occurs via quasi 1D variable range hopping (VRH), in contrast to 3D VRH for untreated PEDOT:PSS films. The typical hopping distance of 60–90 nm, extracted from the conductivity measurements is consistent with hopping between the 30–40 nm sized grains observed with scanning probe microscopy. 相似文献
105.
Greenish yellow organic light-emitting diodes (GYOLEDs) have steadily attracted researcher's attention since they are important to our life. However, their performance significantly lags behind compared with the three primary colors based OLEDs. Herein, for the first time, an ideal host-guest system has been demonstrated to accomplish high-performance phosphorescent GYOLEDs, where the guest concentration is as low as 2%. The GYOLED exhibits a forward-viewing power efficiency of 57.0 lm/W at 1000 cd/m2, which is the highest among GYOLEDs. Besides, extremely low efficiency roll-off and voltages are achieved. The origin of the high performance is unveiled and it is found that the combined mechanisms of host-guest energy transfer and direct exciton formation on the guest are effective to furnish the greenish yellow emission. Then, by dint of this ideal host-guest system, a simplified but high-performance hybrid white OLED (WOLED) has been developed. The WOLED can exhibit an ultrahigh color rendering index (CRI) of 92, a maximum total efficiency of 27.5 lm/W and a low turn-on voltage of 2.5 V (1 cd/m2), unlocking a novel avenue to simultaneously achieve simplified structure, ultrahigh CRI (>90), high efficiency and low voltage. 相似文献
106.
107.
《Organic Electronics》2014,15(1):260-265
We investigated the reduction of the operating voltage in organic light-emitting diodes containing WO3 nanoislands. The thickness of the organic layer and the periodicity of the nanoislands were varied in order to quantitatively analyze the electrical changes. The thickness of the N,N′-bis(naphthalen-1-yl)-N,N′-bis(phenyl)-benzidine (NPB) layer was varied from 150 nm to 600 nm, and various periodic nanoislands of 300 nm, 330 nm, and 370 nm were fabricated. Two geometric factors, which are the effective length and effective area, influence the operating voltage. The effective length is determined by the relative thickness of the nanoislands compared with the organic thickness, and the reduction of the operating voltage is linearly proportional to the relative thickness. The effective area is a nonlinear function of periodicity, and the voltage is reduced as the periodicity decreases. 相似文献
108.
《Organic Electronics》2014,15(4):858-863
The use of appropriate charge carrier transport materials in organic solar cells strongly influences the device performance. In this work, we focused on the molecular electron transport material 1,4,5,8-naphthalene-tetracarboxylic-dianhydride (NTCDA) doped by cesium carbonate (Cs2CO3). We first investigated the electrical properties of such n-type doped material as a function of the doping concentration before using it as electron transport layer (ETL) in polymer solar cells. The doped transparent ETL reduces the series resistance leading to an increased open circuit voltage. A power conversion efficiency of 3.8% was finally achieved in a device with a blend of poly(3-hexylthiophene-2,5-diyl):phenyl-C61-butyric acid methyl ester (P3HT:PCBM) as the active layer and a 5 nm-thick NTCDA:Cs2CO3 film with a molar ratio of 30% as ETL. 相似文献
109.
《Organic Electronics》2014,15(7):1592-1597
A p-type small molecule bearing dicarboxylic acid functional group (–COOH) is synthesized and evaluated for field-effect transistor properties. We discover and report for the first time, that the –COOH groups assist in the passivation of surface traps on the dielectric layer and simultaneously facilitate the self-assembly of the molecules via inter-molecular hydrogen bonding resulting in crystalline active channels. A 9-fold decrease in the threshold voltage was observed for the transistors made using the –COOH functionalized molecule, QT-DA, compared to its ester analogue, QT-ES, providing an evidence of surface passivation. This resulted in an increase in the hole mobility of QT-DA by up to 2 orders of magnitude. It was shown that QT-DA adopts a vertical alignment with respect to the substrate due to preferential interaction between the –COOH groups and the SiO2 surfaces. 相似文献
110.
Ambipolar carrier transport is demonstrated in an optically controllable organic field-effect transistor, where a benzothienothiophene-substituted diarylethene (BTT-DAE) thin film is employed directly as the transistor channel. A closed-ring isomer, which is produced by ultraviolet (UV) light irradiation, allows the carrier injection of both holes and electrons from source-drain electrodes into the BTT-DAE layer. Moreover, alternate UV or visible (VIS) light irradiation induces marked switching in the drain currents caused by reversible photoisomerization between closed-ring (semiconductor) and open-ring (insulator) isomers. The light-driven on/off ratio, which is defined by the ratio of the drain currents in the sample after UV or VIS light irradiation, reaches 240 for hole transport. The value is comparable to the gate-voltage-induced on/off ratio of 160. Our findings, therefore, have a potential to lead to the construction of new optoelectronic devices such as photoreconfigurable logic circuits and light emitting transistors. 相似文献