双相位编码在数据通信中的应用

双相位码是数据串行通信和记录中使用的一种编码方法。在集散控制系统中使用的磁带机和飞行数据记录器中得到广泛应用。本文主要介绍双相位码的编码、译码原理及双相位码的特点;重点论述双相位码的编码和译码过程在微机上的实现。工程实践和实验表明,用微机实现双相位码的编码和译码过程是切实可行的。试用在TDC-2000集散控制系统中获得了圆满成功。     

Growth of high-quality GaSb by metalorganic vapor phase epitaxy

The growth of nominally undoped GaSb layers by atmospheric pressure metalorganic vapor phase epitaxy on GaSb and GaAs substrates is studied. Trimethylgallium and trimethylantimony are used as precursors for the growth at 600°C in a horizontal reactor. The effect of carrier gas flow, V/III-ratio, and trimethylgallium partial pressure on surface morphology, electrical properties and photoluminescence is investigated. The optimum values for the growth parameters are established. The carrier gas flow is shown to have a significant effect on the surface morphology. The optimum growth rate is found to be 3–8 μm/ h, which is higher than previously reported. The 2.5 μm thick GaSb layers on GaAs are p-type, having at optimized growth conditions room-temperature hole mobility and hole concentration of 800 cm² V⁻¹ s⁻¹ and 3·10¹⁶ cm^-3, respectively. The homoepitaxial GaSb layer grown with the same parameters has mirror-like surface and the photoluminescence spectrum is dominated by strong excitonic lines.     

InSb,GaSb, and GaInSb grown using trisdimethylaminoantimony

GalnSb alloys as well as the constituent binaries InSb and GaSb have been grown by organometallic vapor phase epitaxy using the new antimony precursor trisdimethylaminoantimony (TDMASb) combined with conventional group III precursors trimethylindium (TMIn) and trimethylgallium (TMGa). InSb layers were grown at temperatures between 275 and 425°C. The low values of V/III ratio required to obtain good morphologies at the lowest temperatures indicate that the pyrolysis temperature is low for TDMASb. In fact, at the lowest temperatures, the InSb growth efficiency is higher than for other antimony precursors, indicating the TDMASb pyrolysis products assist with TMIn pyrolysis. A similar, but less pronounced trend is observed for GaSb growth at temperatures of less than 500°C. No excess carbon contamination is observed for either the InSb or GaSb layers. Ga_1-xIn_xSb layers with excellent morphologies with values of x between 0 and 0.5 were grown on GaSb substrates without the use of graded layers. The growth temperature was 525°C and the values of V/III ratio, optimized for each value of x, ranged between 1.25 and 1.38. Strong photoluminescence (PL) was observed for values of x of less than 0.3, with values of halfwidth ranging from 13 to 16 meV, somewhat smaller than previous reports for layers grown using conventional precursors without the use of graded layers at the interface. The PL intensity was observed to decrease significantly for higher values of x. The PL peak energies were found to track the band gap energy; thus, the luminescence is due to band edge processes. The layers were all p-type with carrier concentrations of approximately 10¹⁷ cm³. Transmission electron diffraction studies indicate that the Ga_0.5In_0.5 Sb layers are ordered. Two variants of the Cu-Pt structure are observed with nearly the same diffracted intensities. This is the first report of ordering in GalnSb alloys.     

格状编码和RS码级连技术在HDTV中应用的性能模拟

设计一种用于ＨＤＴＶ地面数字传输系统的级连格状编码和ＲＳ码方案，并对其在ＨＤＴＶ中应用进行计算机模拟。模拟结果表明：该级连格状编码方案在低信噪比具有较好的误码性能。     

接收机有限带宽对多相码数字脉压的影响

限制接收机带宽是雷达系统中提高信噪比(SNR)的常用方法,相应的也会引起输出波形的失真。本文主要分析了多相码数字脉压雷达系统中,接收机有限带宽对脉压输出结果所造成的影响。运用五点滑动窗平均法在计算机上进行了模拟,并给出了仿真结果。     

凝析气井井筒动态预测方法

利用垂直管流公式,结合流体相平衡热力学闪蒸计算,运用状态方程模拟,给出凝析气井井筒动态预测新方法.根据该方法.结合油藏数值模拟计算的结果,可准确地预测不同生产时期凝析气井的井筒动态.     

新颖的基于小波变换的数字水印方案

随着计算机网络技术与多媒体技术的快速发展，数字产品的版权保护已经成为信息技术领域中最重要的问题之一，提出了一种新颖的基于离散小波变换的数字水印方案，该方案利用改进的Pacthwork算法，将水印嵌入到LL子带中，水印信号在解码过程中无需使用原始图像可快速地重嵌入，该算法利用BCH码来降低误码率，应用所提出的算法，把一个32个字符的水印嵌入到图像中，实现结果表明水印是不可察觉的，经过JPEG有损压缩，低通与中值滤波等图像处理操作后仍是鲁棒的。     

轴端沟槽底部激光强化工艺参数优化研究

分析了选用不同激光能量密度对HT300进行表面强化处理时，材料表面呈现的四种状况；未相变硬化、相变硬化、表面微熔与表面熔凝的金相组织。根据工艺要求，选取相变硬化方法对轴端沟槽底表面进行处理。分析了工件激光处理方法并通过试验研究，寻找轴端沟槽底部激光强化工艺参数；激光功率（P）、光斑直径（D）及扫描速度（V）的优化组合。硬度测试及耐磨性能试验表明：激光相变处理和激光熔凝处理后轴端沟槽底部表面较表面感应淬火硬度分别提高7%和34%，绝对磨损体积分别下降了13%和25%。实践证实，对轴端沟槽底部激光相变硬化处理方法较其他表面处理方法工艺简单，加工工件符合技术要求，试验结果对零件表面处理提供了可靠依据。     

Formation of GaAsP interface layers monitored by reflectance anisotropy spectroscopy

Reflectance anisotropy spectroscopy (RAS) has been used to study As-by-P exchange during metalorganic vapor phase epitaxy. The study focuses on the processes occurring during switching from GaAs to GaInP, especially the effect of purging PH₃ over a GaAs surface. GaAsP/GaAs superlattices of different periodicity were grown and the P-content was determined by high-resolution x-ray diffraction and correlated to the RAS spectra. From the temperature dependence of the P-content, an activation energy of 0.56 eV was estimated for the incorporation mechanism. In addition to the insights into the processes at mixed group-V heterointerfaces, our study demonstrates the reproducibility of RAS transients that thus can be used for process monitoring.     

Selective partial oxidation of light paraffins with hydrogen peroxide on thin-layer supported Nafion-H catalysts

Thin-layer carbon supported Nafion-H catalysts were found to be active and highly selective (S>98%) for the partial oxidation of C₁-C₃ alkanes, in a three phase catalytic membrane reactor (3PCMR), under mild conditions and in the presence of H₂O₂. The influences of the catalyst teflon loading and H₂O₂ concentration on the reaction rate have been evaluated. A reaction pathway, based on the electrophilic hydroxylation of the C-H bond of alkanes with protonated hydrogen peroxide (H₃O ₂ ⁺ ), is discussed.