Electrical Properties and Electroluminescence of 4H-SiC p-n Junction Diodes

Homoepitaxial growth of 4H-SiC on off-oriented Si-face(0001 ) substrates was performed by using the step-controlled epitaxy technique in a newly developed low-pressure hot-wall CVD (LP-HWCVD) system with a horizontal aircooled quartz tube at around 1500 ℃and 1.33 × 104 Pa by employing SiH4 C2H4 H2. In-situ doping during growth was carried out by adding NH3 gas into the precursor gases. It was shown that the maximum Hall mobility of the undoped 4H-SiC epilayers at room temperature is about 430 cm2 ·V -1 ·s -1 with a carrier concentration of ～ 1016 cm-3 and the highest carrier concentration of the N-doped 4H-SiC epilayer obtained at NH3 flow rate of 3 sccm is about 2.7 × 1021 cm-3 with a mobility of 0.75 cm2 ·V -1 ·S -1. SiC p-n junctions were obtained by epitaxially growing N-doped 4H-SiC epilayers on Aldoped 4H-SiC substrates. The C-V characteristics of the diodes were linear in the 1/C3-V coordinates indicating that the obtained p-n junctions were graded with a built-in voltage of 2.7 eV. The room temperature electroluminescence spectra of 4H-SiC p-n junctions are studied as a function of forward current. The D-A pair recombination due to nitrogen donors and the unintentional, deep boron center is dominant at low forward bias, while the D-A pair recombination due to nitrogen donors and aluminum acceptors are dominant at higher forward biases. The p-n junctions could operate at temperature of up to 400 ℃, which provides a potential for high-temperature applications.     

Analysis of NEA C5MOX benchmark with computer code “cohint” based on interface current approach

Interface current approach to solution of neutron transport equation has been earlier used for LWR lattice problems. The analysis of the C5MOX benchmark is a opportunity to test its applicability to heterogeneous reactor problem. Computer code COHINT, which incorporates a routine for solution of neutron transport equation in X-Y geometry by interface current approach was used for this analysis by representing the fuel rod as a square one. Region interface angular fluxes are represented by a four-term expansion. It is found that the average pin power error is about 2.28 % (peak pin error 4.1 %) relative to reference calculations. Further improvement is possible by introduction of the capability to represent circular rods with in a square cell in COHINT.     

Off-axis electron holography of electrostatic potentials in unbiased and reverse biased focused ion beam milled semiconductor devices

Off‐axis electron holography in the transmission electron microscope (TEM) is used to measure two‐dimensional electrostatic potentials in both unbiased and reverse biased silicon specimens that each contain a single p–n junction. All the specimens are prepared for examination in the TEM using focused ion beam (FIB) milling. The in situ electrical biasing experiments make use of a novel specimen geometry, which is based on a combination of cleaving and FIB milling. The design and construction of an electrical biasing holder are described, and the effects of TEM specimen preparation on the electrostatic potential in the specimen, as well as on fringing fields beyond the specimen surface, are assessed.     

Elastic–plastic spherical contact under combined normal and tangential loading in full stick

The behavior of an elastic–plastic contact between a deformable sphere and a rigid flat under combined normal and tangential loading with full stick contact condition is investigated theoretically. Sliding inception is treated as a plastic yield failure mechanism, which allows static friction modeling under highly adhesive conditions. Several contact parameters such as: junction tangential stiffness, static friction force and static friction coefficient are extensively investigated. The phenomenon of junction growth and the evolution of the plastic zone in the contact region are briefly described. It is found that at low normal dimensionless loads the static friction coefficient decreases sharply with increasing normal load, in breach with the classical laws of friction. As the normal load further increases the static friction coefficient approaches a constant value that is about 0.3 for many material properties combinations.     

Efficient photocatalytic H2 evolution over Cu and Cu3P co-modified TiO2 nanosheet

Schottky junction and p-n heterojunction are widely employed to enhance the charge transfer during the photocatalysis process. Herein, Cu and Cu₃P co-modified TiO₂ nanosheet hybrid (Cu–Cu₃P/TiO₂) was fabricated using an in situ hydrothermal method. The ternary composite achieved the superior H₂ evolution rate of 6915.7 μmol g^?1 h^?1 under simulated sunlight, which was higher than that of Cu/TiO₂ (4643.4 μmol g^?1 h^?1) and Cu₃P/TiO₂ (6315.8 μmol g^?1 h^?1) and pure TiO₂ (415.7 μmol g^?1 h^?1). The enhanced activity can be attributed to the collaboration effect of Schottky junction and p-n heterojunction among Cu/TiO₂ and Cu₃P/TiO₂, which can harvest the visible light, reduce the recombination of charge carriers and lower the overpotential of H₂ evolution, leading to a fast H₂ evolution kinetics. This work develops a feasible method for the exploration of H₂ evolution photocatalyst with outstanding charge separation properties.     

最新特高压晶闸管

研究使晶闸管有效面积比极大化的阴极图形及结终端结构设计和工艺技术,实质性提高特高压(UH-V)晶闸管综合性能参数水平,易于折中协调突出重点性能参数。研制成6.3 kA/7.5 kV及5.5 kA/8.5 kV最新UHV晶闸管,可完全满足最新+800 kV,6.25 kA,10 GW及±1 100 kV,5.5 kA,12.1 GW换流阀的应用要求。     

NMR-Guided Repositioning of Non-Steroidal Anti-Inflammatory Drugs into Tight Junction Modulators

Bioavailability is a major bottleneck in the clinical application of medium molecular weight therapeutics, including protein and peptide drugs. Paracellular transport of these molecules is hampered by intercellular tight junction (TJ) complexes. Therefore, safe chemical regulators for TJ loosening are desired. Here, we showed a potential application of select non-steroidal anti-inflammatory drugs (NSAIDs) as TJ modulators. Based on our previous observation that diclofenac and flufenamic acid directly bound various PDZ domains with a broad specificity, we applied solution nuclear magnetic resonance techniques to examine the interaction of other NSAIDs and the first PDZ domain (PDZ1) of zonula occludens (ZO)-1, ZO-1(PDZ1). Inhibition of ZO-1(PDZ1) is expected to provide loosening of the epithelial barrier function because the domain plays a crucial role in maintaining TJ integrity. Accordingly, diclofenac and indomethacin were found to decrease the subcellular localization of claudin (CLD)-2 but not occludin and ZO-1 at the apicolateral intercellular compartment of Madin–Darby canine kidney (MDCK) II cells. These NSAIDs exhibited 125–155% improved paracellular efflux of fluorescein isothiocyanate insulin for the Caco-2 cell monolayer. We propose that these NSAIDs can be repurposed as drug absorption enhancers for peptide drugs.     

电子汽车衡常见故障与预防

本文主要以举例的方式介绍电子汽车衡常见故障及排除方法,再从实际工作出发如何去预防故障的发生。     

Cu-MOF assisted synthesis of CuS/CdS(H)/CdS(C): Enhanced photocatalytic hydrogen production under visible light

CuS/CdS(H)/CdS(C) photocatalysts were synthesized via the hydrothermal method by employing thiourea, Cd(CH₃COO)₂·3H₂O and copper 1,4-benzenedicarboxylate MOF (CuBDC). The photocatalysts were characterized by XRD, XPS, BET, TEM and UV–vis diffuse reflectance spectra. Interestingly, hexagonal CdS (CdS(H)) and cubic CdS (CdS(C)) were formed with phase junctions in one step when CuBDC was introduced in the synthesis process, in addition, CuS nanoparticles were deposited on CdS. However, only hexagonal CdS was obtained without CuBDC. It demonstrated that CuBDC was not only the precursor of CuS but also the structural modifier for CdS. With the reduction of re-combination of photo-induced electrons and holes caused by phase junctions and the enhancement of visible-light absorptions due to the loading of CuS, all CuS/CdS(H)/CdS(C) photocatalysts had higher photocurrent densities under visible-light irradiation, and consequently the higher rates of H₂ production than pure CdS(H). Typically, the catalyst with 2.89 wt% of Cu showed a highest rate of H₂ evolution at 2042 μmol/g/h.