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71.
Christian P. Deck Gregg S. B. McKee Kenneth S. Vecchio 《Journal of Electronic Materials》2006,35(2):211-223
The unique properties of carbon nanotubes (CNTs) have suggested applications in a variety of fields. Multiwalled nanotubes
were synthesized using chemical vapor deposition (CVD) procedures and subsequently characterized. Reaction parameters such
as catalyst type and carrier gas flow rate were optimized to produce well-aligned multiwalled nanotubes with lengths between
a few microns to several millimeters. Characterization was performed with scanning electron microscopy (SEM), transmission
electron microscopy (TEM), x-ray diffraction (XRD), energy dispersive x-ray spectroscopy (EDS), thermo-gravimetric analysis,
and Raman spectroscopy, focusing on composition and purity. Results show the synthesis of high-purity nanotubes of several
millimeters in length from iron, nickel, cobalt, and titanium carbide catalysts with thermal stability to above 550°C. 相似文献
72.
This report focuses on research into waveguides prepared by K+-Na+ ion exchange with the help of an electric field, and the subsequent comparison with waveguides prepared by pure thermal ion
exchange. The goals of this work were to determine the characteristics of and to address the technological problems associated
with waveguides prepared in two types of highly pure optical glass: special soda-lime silica GIL49 glass produced from pure
raw materials and commercially prepared borosilicate BK7 glass. An appropriate chemical mixture, KNO3:Ca(NO3)2 in the molar ratio of 41:59, was used as the source of potassium ions. Experiments were conducted at temperatures between
250 and 410°C, and electric field values between 0 and 150 V/mm. The number of modes, depth, profile, and the change in refractive
index (Δn) were measured for samples from each type of glass under various technological conditions. All of these parameters
can be controlled accurately and repeatedly by the electric field. These experiments have also shown that a particular advantage
of these types of pure glass is the low waveguide optical losses (0.1 to 0.2 dB/cm) attainable. 相似文献
73.
J. Stopford D. AllenO. Aldrian M. MorshedJ. Wittge A.N. DanilewskyP.J. McNally 《Microelectronic Engineering》2011,88(1):64-71
The practicality of plasma etching, combined with low temperature and directional process capabilities make it an integral part of the IC manufacturing process. A significant cause of damage to wafers during plasma processing is arcing damage. Plasma arcing damage results in large pits and non-uniformities on the wafer surface which can lead to wafer breakage and high yield losses.Thus a non-destructive wafer damage metrology is crucial to the understanding of wafer failure mechanisms. We report on the successful use of a combined suite of non-destructive metrology techniques to locate the arc damage sites and examine the physical processes which have occurred as a result of the damage. These consist of 3D X-ray diffraction imaging (3D-XRDI), micro-Raman spectroscopy (μRS), and scanning electron microscopy (SEM).In the case of the two examples examined in this study the plasma induced damage on the wafer surface appears as regions of damage ranging from 100 μm to 1000 μm in diameter. 3D-XRDI shows that the strain fields propagate out from the damage site in all directions, with the damage penetrating up to ? of the way through the substrate. K-means clustering and false colouring algorithms are used to highlight the regions of interest in 3D-XRDI, and to enhance the analysis process. Sectioning of the 3D images has enabled non-destructive imaging of the internal damage in the samples at any location. Micro-Raman spectroscopy results indicate the presence of both crystalline and amorphous silicon. Strain measurements at the damage site show tensile strains as high as 500 MPa in certain situations, with strain levels increasing from the surface towards the bottom of the dislocation cell structures, which can be distinguished in the synchrotron X-ray topographs. 3D-XRDI and μRS results are in close correlation, proving the potential for 3D-XRDI as non-contact, non-destructive metrology particularly suited to these problems. 相似文献
74.
The electrochemical characteristics of the plasma membranes of single cells and organelles were investigated. Silicon fabrication technology was used to produce a metal ultra-microelectrode (UME). Furthermore, the UME was characterized in a cell medium using electrochemical impedance spectroscopy (EIS). A single rat fibroblast cell, or chloroplast purified from Peperomia metallica leaves, was immobilized by a micropipette after which the UME was inserted into its cytosolic space through cell membrane using a piezo actuator. An in vivo EIS measurement between the UME and the counter electrode outside of a single cell was taken. The measurements were analyzed using equivalent circuits in order to estimate the membrane impedance of a single cell. 相似文献
75.
In this study, we investigate the influence of nanocrystalline diamond (NCD) thin film morphology and thickness on their electrical properties. NCD films are grown on p-type Si substrates with varied thicknesses from 250 to 788 nm. Electrical contacts are formed from combination of Ti/Au metal layers (100 nm thick each). The I-V and breakdown field measurements are used to analyze the electrical properties of metal/NCD/Si sandwich structure. In addition, NCD films are analyzed by scanning electron microscopy and Raman spectroscopy for better interpretation of the I-V measurements. 相似文献
76.
Takashi Isoshima Youichi Okabayashi Eisuke Ito Masahiko Hara Whee Won Chin Jin Wook Han 《Organic Electronics》2013,14(8):1988-1991
Negative giant surface potential was realized in a vacuum-evaporated film of tris(7-propyl-8-hydroxyquinolinolato) aluminum(III) [Al(7-Prq)3]. Electroabsorption response of the film presented an inverted polarity to that of tris(8-hydroxyquinolinolato) aluminum (Alq3), suggesting opposite noncentrosymmetry of molecular orientation. Asymmetric dice model with molecular geometric effect has been proposed, and propyl substitution at 7 position of the ligands was indicated to affects the molecular posture on the surface to invert the polarity of noncentrosymmetry. Our results opened a new possibility of controlling molecular orientation in a film for device applications. 相似文献
77.
为了提高复杂环境中甲烷气体探测的适用性,选择空芯带隙型光子晶体光纤(单端镀全反膜)作为光学气室,实现了置入式同源甲烷浓度的探测。采用可调谐半导体激光吸收光谱(TDLAS)技术,结合长度为0.5 m的空芯带隙型光子晶体光纤,实现了甲烷气体的在线测量,系统的检测下限可达到1.92×10^-5,稳定性波动小于±2.18%。单端全反射设计配合同源探测方式使复杂环境中的甲烷浓度的置入式探测成为可能,为单光源分布式探测提供了研究基础。 相似文献
78.
Fault diagnosis of full-scan designs has been progressed significantly. However, most existing techniques are aimed at a logic
block with a single fault. Strategies on top of these block-level techniques are needed in order to successfully diagnose
a large chip with multiple faults. In this paper, we present such a strategy. Our strategy is effective in identifying more
than one fault accurately. It proceeds in two phases. In the first phase we concentrate on the identification of the so-called
structurally independent faults based on a concept referred to as word-level prime candidate, while in the second phase we further trace the locations of the more elusive structural dependent faults. Experimental results
show that this strategy is able to find 3 to 4 faults within 10 signal inspections for three real-life designs randomly injected
with 5 node-type or stuck-at faults.
Part of this work has ever appeared in the proceedings of Asian Test Symposium in 2003.
Yu-Chiun Lin received his BS degrees in Electrical Engineering from National Central University in 2000, and MS degree from Electrical
Engineering of National Tsing Hua University in 2002. Since then, he has been with Ali Corporation as a design engineer. His
current interests include the design of USB controllers and imaging periperals.
Shi-Yu Huang received his BS, MS degrees in Electrical Engineering from National Taiwan University in 1988, 1992 and Ph.D. degree in Electrical
and Computer Engineering from the University of California, Santa Barbara in 1997, respectively. From 1997 to 1998 he was
a software engineer at National Semiconductor Corp., Santa Clara, investigating the System-On-Chip design methodology. From
1998 to 1999, he was with Worldwide Semiconductor Manufacturing Corp., designing the high-speed Built-In Self-Test circuits
for memories. He joined the faculty of National Tsing-Hua University, Taiwan, in 1999, where he is currently an Associate
Professor. Dr. Huang’s research interests include CMOS image sensor design, low-power memory design, power estimation, and
fault diagnosis methodologies. 相似文献
79.
Raji Soundararajan Kelvin G. Lynn Salah Awadallah Csaba Szeles Su-Huai Wei 《Journal of Electronic Materials》2006,35(6):1333-1340
We have studied the defect levels in as grown and post growth processed cadmium telluride (CdTe) using thermoelectric effect
spectroscopy (TEES) and thermally stimulated current (TSC) techniques. We have extracted the thermal energy (Eth) and trapping cross section (σth) for the defect levels using the initial rise and variable heating rate methods. We have identified 10 different defect levels
in the crystals. Thermal ionization energy values obtained experimentally were compared to theoretical values of the transition-energy
levels of intrinsic and extrinsic defects and defect complexes in CdTe determined by first-principles band-structure calculations.
On the basis of this comparison, we have associated the observed ionization levels with various native defects and impurity
complexes. 相似文献
80.
Spinel MxMn1−xFe2O4 ferrites (M=Zn or Cd) synthesized via the co-precipitation method were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), diffuse reflectance UV–vis and Mössbauer spectroscopy. MnFe2O4 exhibited mainly cubic structure when Cd was incorporated, whereas the Zn incorporation stimulated a mixed phase consisting of MnFe2O4 and ZnMnFe2O4. The IR spectra of both Cd- and Zn modified MnFe2O4 samples revealed vibration of the chemical bond Fe2+O2− in A location of the tetrahedron which infers that dopants were uniformly distributed over the system. The optical band gap energy showed large variations; a smaller value was determined for Cd0.2Mn0.8Fe2O4 (1.46 eV) when compared with those of MnFe2O4 (2.16 eV) and Zn0.2Mn0.8Fe2O4 (2.8 eV). The analysis of Mössbauer spectra gave inversion values of Fe3+ distribution in tetrahedral coordinated sites of 24%, 57% and 65% in MnFe2O4, Zn0.2Mn0.8Fe2O4 and Cd0.2Mn0.8Fe2O4, respectively. It was found that Cd0.2Mn0.8Fe2O4 exhibited the best performance in the photocatalytic reduction of Cr(VI) to Cr(III) having a maximum value of 96% within 30 min, and the experimental data obeyed pseudo-second-order rate kinetic model. Also, the linear model of Langmuir attained a maximum adsorption capacity of 37 mg g−1 for Cd0.2Mn0.8Fe2O4. 相似文献