微波电子回旋共振等离子体技术及其应用

微波电子回旋共振等离子体是淀积薄膜、微细加工和材料表面改性的一种重要手段。由于这种等离子体电离水平高,化学活性好,可以用来实现基片上薄膜的室温化学气相淀积和反应离子刻蚀,因此对于微电子学、光电子学和薄膜传感器件的发展,这种等离子体会具有重要的意义。此外,采用微波电子回旋共振等离子体原理,没有灯丝的离子源可以提高离子源的使用寿命,可以增加离子束的束流密度。可以确信,微波电子回旋共振等离子体的发展,将把离子源技术提高到一个新的水平。显然,这必将对材料表面改性工艺,包括离子注入掺杂等工艺的发展发挥作用。自从1985年以来,为了得到大容积等离子体而发展了微波电子回旋共振多磁极等离子体,这些技术在薄膜技术、微细加工以及材料表面改性中的应用前景是乐观的。我们将在本文中,介绍微波电子回旋共振等离子体的原理及其应用。     

用发射天线式微波等离子体CVD装置沉积大面积金刚石薄膜

在国内首次研制成功了高气压发射天线式微波等离子体辅助化学气相沉积金刚石薄膜装置，用该装置成功地在３英寸的单晶硅衬底上沉积了Φ７０ｍｍ的金刚石薄膜。这一成果填补了国内空白，对我国金刚石薄膜研究领域的设备更新换代和开发应用具有重要意义。     

Selective and nonselective wet etching of Zn0.9Mg0.1O/ZnO

Wet etch rates at 25°C for Zn_0.9Mg_0.1O grown on sapphire substrates by pulsed laser deposition (PLD) were in the range 300–1100 nm · min⁻¹ with HCl/H₂O (5×10⁻³−2×10⁻² M) and 120–300 nm · min⁻¹ with H₃PO₄/H₂O (5×10⁻³−2×10⁻² M). Both of these dilute mixtures exhibited diffusion-limited etching, with thermal activation energies of 2–3 kCal · mol⁻¹. By sharp contrast, the etch rates for ZnO also grown on sapphire by PLD were much slower in similar solutions, with rates of 1.2–50 nm · min⁻¹ in HCl/H₂O (0.01–1.2 M) and 12–54 nm · min⁻¹ in H₃PO₄/H₂O (0.02–0.15 M). The etching was reaction limited over the temperature range 25–75°C, with activation energies close to 6 kCal · mol⁻¹. The resulting selectivity of Zn_0.9Mg_0.1O over ZnO can be a high as ∼400 with HCl and ∼30 with H₃PO₄.     

彩色等离子体显示屏中运动失真现象的研究

本文研究了等离子体显示屏在显示动态的画面时产生运动失真现象的原因，并在比较国内外各种解决方法的基础上提出了一种优化的ADS驱动方式。在优化的ADS驱动方式基础上开发的14时彩色等离子体原型样机表明优化的ADS驱动方式在视觉闪烁感和运动图像质量方面都有了很大的提高。     

Fabrication of sharp silicon tips employing anisotropic wet etching and reactive ion etching

We developed a process to obtain sharper silicon tips by employing anisotropic etching in a KOH solution followed by SF₆ plasma etch. The tips were further sharpened using the established thermal oxidation technique to decrease the cone angle and, therefore, obtain smaller curvature radii. We have analyzed the impact of such changes in geometry on a figure of merit associated with the field emission characteristics. An increase in the figure of merit by a factor of three was found in relation to the tips before sharpening.     

A Study of Ozone Generation by Negative Corona Discharge Through Different Plasma Chemistry Models

The Steady radial distribution of chemical species in a wire‐to‐cylinder ozone generator filled with pure oxygen has been computed by applying four different plasma chemistry models of increasing complexity. The most complete model considers ten species (e, O₂ ⁺, O₂ ^?, O₃ ^?, O^?, O₂, O₂(¹Δ_g), O₂(¹∑_g ⁺), O and O₃) and 79 reactions, including ionization by electron impact, electron attachment and detachment, electron-ion recombination, charge transfer, etc. The chemical model is coupled with the electrical model through Poisson's equation. The spatially averaged ozone density has been computed as a function of the current intensity and compared with the experimental values obtained by UV spectroscopy.     

A mathematical model for wet-chemical diffusion-controlled mask etching through a circular hole

Asymptotic solutions are presented for diffusion-controlled wet-chemical etching through a round hole in a mask. The three-dimensional diffusion field is assumed to be axisymmetric and fully developed. Two time regimes are considered. The first applies when the etched depth is small in comparison with the width of the mask opening. In the second, the depth of etching is much greater than the width of the mask opening. Explicit solutions are found for the shape of the etched surface as a function of the physical parameters. Among other things it is found that, as long as the etched pits are shallow, etching through small apertures is faster than through larger ones. The opposite is true for deep pits.     

等离子体浸没式离子注入-离子束增强沉积TiN膜研究

本文采用一种新型的等离子体浸没式离子注入 离子束增强沉积的技术(PIII IBAD),在Cr12MoV钢基体上制备出了TiN膜,对沉积膜的组织进行了光电子能谱分析,并对沉积膜进行了硬度检测、摩擦试验及磨痕形貌分析。试验结果表明,沉积膜中的组织为TiN、TiO2和Ti2O3,TiN膜具有高达Hv3200的高硬度和极其优良的摩擦性能。     

A Micellar Route to Ordered Arrays of Magnetic Nanoparticles: From Size‐Selected Pure Cobalt Dots to Cobalt–Cobalt Oxide Core–Shell Systems

Starting with Co‐salt‐loaded inverse micelles, which form if the diblock copolymer polystyrene‐block‐poly(2‐vinylpyridine) is dissolved in a selective solvent like toluene and CoCl₂ is added to the solution, monomicellar arrays of such micelles exhibiting a significant hexagonal order can be prepared on top of various substrates with tailored intermicellar distances and structure heights. In order to remove the polymer matrix and to finally obtain arrays of pure Co nanoparticles, the micelles are first exposed to an oxygen plasma, followed by a treatment in a hydrogen plasma. Applying in‐situ X‐ray photoelectron spectroscopy, it is demonstrated that: 1) The oxygen plasma completely removes the polymer, though conserving the original order of the micellar array. Furthermore, the resulting nanoparticles are entirely oxidized with a chemical shift of the Co 2p_3/2 line pointing to the formation of Co₃O₄. 2) By the subsequent hydrogen plasma treatment the nanoparticles are fully reduced to metallic Co. 3) By exposing the pure Co nanoparticles for 100 s to various oxygen partial pressures pequation/tex2gif-inf-5.gif, a stepwise oxidation is observed with a still metallic Co core surrounded by an oxide shell. The data allow the extraction of the thickness of the oxide shell as a function of the total exposure to oxygen (pequation/tex2gif-inf-7.gif × time), thus giving the opportunity to control the ferromagnetic–antiferromagnetic composition of an exchange‐biased magnetic system.     

Influence of the silicon surface treatment by plasma etching and scratching on the nucleation of diamond grown in HFCVD - a comparative study

A comparative study for the nucleation of diamond was carried out using surface treatment like (i) surface scratching with 1 μm diamond paste and (ii) surface etching using chlorine plasma at different RF powers (50, 100 and 150 W). Atomic force microscopic study shows variation in roughness from 31 nm to 110 nm. Scratching results in random scratches, whereas plasma etches a surface uniformly. Scanning electron microscopic observations show well faceted crystallites with a predominance of angular shaped grains corresponding to 〈100〉 and 〈110〉 crystallite surfaces for the scratched as well as plasma etched substrate. Surface etching at 150 W plasma power results in a better growth in comparison with 50 and 100 W plasma powers. Chlorine-radical is found responsible for the changes in the growth morphology. Raman spectroscopy shows a sharp peak at 1,332 cm⁻¹ and a peak at ∼1,580 cm⁻¹ for both samples.