不同溅射时间下AlN缓冲层对ZnO薄膜的影响

实验采用射频磁控溅射技术,制备了不同溅射时间下AlN缓冲层的ZnO薄膜,研究了薄膜的结构、形貌及电学性能.结果表明,不同溅射时间下AlN缓冲层ZnO薄膜的生长依然是(002)择优取向,而且当缓冲层溅射时间为60min时,ZnO薄膜的结构和电学性能最好.     

RFIC自动测试方案设计

为解决射频芯片设计企业对射频芯片自能测试的要求,在比较分析了国内外射频自动测试方案和标准的基础上,提出了基于LabVIEW的GUI风格软件平台,通过GPIB总线接口与测试仪器进行通信、控制和数据采集的射频芯片自动测试方案。以上位机软件为核心,通过虚拟仪器技术控制各测试仪器进行协调工作,完成芯片的参数设置、数据采集和报表分析等工作,本套系统完全实现了射频芯片测试的自动化,节省了大量的测试时间。     

基于PXA255的嵌入式无线网络终端设计

ZigBee是建立在IEEE802．15．4协议上并被不同设备制造商共同遵守的应用规范，尤其适合于无线网络，具有低成本、低功耗、低延迟和高可靠性等特点。CC2420是Chipeon公司制造的符合ZigBee标准的无线收发芯片。PXA255是Intel公司生产的32位处理器，具有小体积、数据处理能力强大的特点。该文结合两款芯片的上述特点设计出以PXA255为控制器、以CC2420为无线收发器的低功耗无线网络终端。由该终端构成的网络可以在不更换电池的情况下工作半年以上。     

基于nRF9E5的多点无线温度采集系统设计

该文论述了基于WSN的典型基本应用——多点无线温度采集系统的设计过程，给出了该系统的以DS18B20为温度传感器，射频SoC nRF9E5为系统核心的硬件方案，分析了用户程序数据处理流程，并构建了合理的通讯协议，实现了多点无线温度采集系统设计，最后给出了系统测试的结果。     

High-intensity multi-bunch beam generation by a photo-cathode RF gun

A multi-bunch photo-cathode RF gun system has been developed as an electron source for the production of intense quasi-monochromatic X-rays based on inverse Compton scattering. The desired multi-bunch beam is 100 bunches/pulse with a total charge of 500 nC and a bunch spacing of 2.8 ns. We modified the gun cavity of a ‘BNL-type IV’ RF gun to allow a CsTe cathode plug in the end plate. The system uses a four-dipole chicane beam line to allow the injection of laser light normal to the cathode surface. We compensate the gun cavity beam loading caused by the high-intensity multi-bunch electron beam by injecting the laser pulse before RF power has filled the cavity. We have achieved a total intensity of 220 nC in 100 bunches with a bunch-to-bunch energy spread under 1.3% (peak-to-peak). This paper concentrates on experiments to generate the high-intensity multi-bunch beam with compensation of the bunch-to-bunch energy spread due to heavy beam loading.     

Fabrication of Er3+/Pr3+ Co-doped soda-lime glass thin films using RF magnetron sputtering method and optical property characterization

Er^3+/Pr³⁺ co-doped soda-lime glass thin films have been fabricated using RF magnetron sputtering method and their structural and optical properties have been studied. Deposition rate, crystallinity, and composition of glass thin films were investigated by scanning electron microscopy, transmission electron microscopy, and electron probe micro area analysis. Refractive index, birefringence and binding characteristics have been investigated using a prism coupler and X-ray photoelectron spectroscopy. Er³⁺/Pr³⁺ co-doped soda lime glass thin films were prepared by changing substrate temperature (room temp. ∼550^∘C), RF power (90 W–130 W), and Ar/O₂ gas flow ratio at processing pressure of 4 mTorr. Glass thin films could be obtained at the optimized processing condition at 350^∘C, RF power of 130 W, and gas flow of Ar:O₂ = 40:0 with maximum deposition rate of 1.6 μm/h. Refractive index and birefringence increased from 1.5614 to 1.5838 and from 0.000154 to 0.000552, respectively, as the content of Pr³⁺ increased. Binding energy of Pr3d also increased as the content of Pr³⁺ increased.     

AT88RF020型射频识别卡及其应用

AT88RF020是13.56MHz的低端射频识别卡,遵循ISO/IEC 14443 Type B协议.着重介绍AT88RF020型射频卡的特点、工作原理及其在学校就餐管理中的应用,同时给出部分程序代码.     

射频CMOS平面螺旋电感2-π等效电路模型参数的提取

从有理分式拟合方法出发,提出了用于射频CMOS平面螺旋电感2-π等效电路模型参数提取的新方法.通过比较提参后等效电路给出的S参数和实验测量的S参数,证明该方法的精度很高.此外,提参的策略非常直接,因此容易在CAD里面编程实现.提参得到的等效电路模型对于射频电路设计者来说也是非常有用的.     

RF MEMS压控振荡器的研制及相位噪声特性研究

利用RF MEMS可变电容作为频率调节元件,制备了中心频率为2 GHz的MEMS VCO器件.RF MEMS可变电容采用凹型结构,其控制极板与电容极板分离,并采用表面微机械工艺制造,在2 GHz时的Q值最高约为38.462.MEMS VCO的测试结果表明,偏离2.007 GHz的载波频率100kHz处的单边带相位噪声为-107 dBc/Hz,此相位噪声性能优于他们与90年代末国外同频率器件.并与采用GaAs超突变结变容二极管的VCO器件进行了比较,说明由于集成了RF MEMS可变电容,使得在RF MEMS可变电容的机械谐振频率近端时,MEMS VCO的相位噪声特性发生了改变.     

RF MEMS引线键合的射频性能和等效电路研究

针对一种用键合线连接的简单封装模型进行射频性能的模拟.用HFSS软件对不同长度、不同高度、不同直径以及不同间距的键合线进行模拟,总结出这些参数对键合线射频性能的影响.提出了由顶盖、CPW和键合线组成的简单封装结构的等效电路,并提取参数值.用Mcrowave Office软件对等效电路进行模拟,其S11在6～8 GHz内与HFSS模拟的模型的S11相差2 dB以内,其S21在1～10 GHz内与模型的S21相差0.1 dB以内.