Effect of Fe-doping on the structural,optical and magnetic properties of ZnO thin films prepared by RF magnetron sputtering

In this paper, we report the fabrication and systematic characterization of Fe Doped ZnO thin Films. Fe_xZn_1−x O (x=0<0.05) films were prepared by RF magnetron sputtering on Si (400) substrate. Influence of Fe doping on structural, optical and magnetic properties has been studied. The X-ray diffraction (XRD) analysis shows that Fe doping has affected the crystalline structure, grain size and strain in the thin films. The best crystalline structure is obtained for 3% Fe Doping as observed from Atomic Force Microscopy (AFM) and X-ray diffraction (XRD). The magnetic properties studied using Vibrating Sample Magnetometer reveals the room temperature ferromagnetic nature of the thin films. However, changing the Fe concentration degrades the magnetic property in turn. The mechanism behind the above results has been discussed minutely in this paper.     

基于OMAP5912双核架构的嵌入式系统及其应用

详细介绍了OMAP5912处理器的软硬件架构,ARM和DSP间通讯应用程序DSP/BIOS的设计,以及ARM和DSP端编程.     

无线传感器网络在车厢环境测控中的应用

介绍了用于客车室内环境检测的无线传感器网络的设计,讨论了传感器节点的温湿度、空气质量检测原理,电源特征和通讯模式。     

ModBus协议在无线监控系统中的应用

本文介绍了ModBus协议的原理和在信号无线监控系统上的应用,提出了可有效延长通信距离的中继地址编码方案和传输实现方法,提出了用VC编程通过串行口直接控制数传模块的方案。并讨论了无线数据传输抗干扰措施的一些关键技术问题和解决方法。     

同质缓冲层对ZnO薄膜光学性质的影响

利用射频磁控溅射技术,在单晶硅衬底上生长出高质量(0002)晶面取向的ZnO外延薄膜。通过XRD、AFM、吸收光谱、光致荧光发光谱的实验研究,发现加入适当厚度的、低温生长的ZnO同质缓冲层,可有效降低晶格失配和因热膨胀系数不同引起的晶格畸变。在衬底温度200℃、沉积时间5min的ZnO缓冲层上,以450℃衬底温度溅射ZnO薄膜主层,得到的ZnO样品的晶体结构、表面形貌和光学性质均有较明显的改善。     

军用电台射频性能的三维测试

射频测试是电台性能测试的一项基本内容.本文将已经标准化了的手机与无线局域网的射频测试内容和方法引入军用电台的射频性能测试中,定量地考察了电台的辐射性能.并提出该方法同样适用于我军的高速数据电台.     

非理想配比二氧化钒薄膜喇曼光谱研究

采用射频(RF)磁控溅射在各种条件下制备的VO2薄膜的喇曼光谱曲线.研究发现,和理想配比VO2薄膜的主要喇曼峰相比较,无论是富钒的VO2薄膜还是富氧的VO2薄膜它们主要的喇曼峰都向高频方向移动.我们提供了实验证据并且讨论了非理想配比导致VO2薄膜喇曼光谱变化的原因.     

用于SAW器件的C轴择优取向LiNbO3薄膜的制备及结构研究

采用射频（RF）磁控溅射法在金刚石（111）衬底上沉积LiNbO3（LN）薄膜,借助X射线衍射技术（XRD）,研究了外加偏压（0～80V）和衬底温度（200～500℃）等工艺参数对LiNbO3薄膜结构和取向性的影响。实验结果表明,在衬底温度为200℃、外加偏压为～80V的T艺条件下,LiNbO3的（006）衍射峰强度超过LN的（012）衍射峰强度,在金刚石（111）衬底上获得较高c轴取向的LN薄膜。并且对C轴择优取向LN薄膜的形成机理进行了探讨。     

Influence of the target power on the microstructure and electrical properties of Al-doped ZnO thin films deposited at room temperature

The columnar structure and its formation process have a significant effect on the electrical properties of Al-doped ZnO (AZO) thin film in-situ deposited at room temperature by magnetron sputtering method. The influences of RF power on the formation of the columnar structure and its regular pattern were systematically investigated. The RF power varied from 120 W to 240 W. The best quality AZO sample with the sheet resistance of 6.07 Ω/sq and average transmittance of 83.2% was obtained at 210 W (for 30 min). The analysis of crosses section images indicated that the columnar structure appeared earlier at higher RF power. The thickness at which the columnar structure began to appear didn't fluctuate at a fixed value. Furthermore, high RF power relatively contributed to reduce the thickness. The Drude's model was used for examining the correlation between optical and electrical behaviors, and the theoretical results of electrical properties were well matched with the experimental data. According to the XRD results and XPS analysis, the appearance of Al₂O₃ may exert a significant influence on the deterioration in electrical properties of the sample deposited at 240 W.     

10cm×30cm矩形射频离子束源的研制

本文介绍了射频(Radio frequency,RF)感应耦合等离子体(Inductive couple plasma,ICP)离子束源的设计研究.该射频离子束源可工作于Ar,在使用四栅引出系统时,可获得100-1000 eV的离子束.当射频功率为900 W,在Ar为工作气体时,束流可达到600 mA.在束流为120 mA时,距源26 cm处,在主轴方向27 cm的范围内不均匀性小于±6%.该离子束源可作为大面积离子束刻蚀、离子束抛光等的离子束源.