发展我国冻干蔬菜产业大有可为

本文介绍了真空冷冻干燥食品的发展现状、特点及其工艺流程 ,着重讨论了发展冻干食品工业的广阔前景     

测井数据实时采集与接口设计

介绍了一种采用改进型的ＣＬＳ３７００数控测井系统对微电阻率扫描仪数据采集与控制接口的设计及实现方法。基于ＣＬＳ３７００数控测井仪和ＦＭＳ仪采用８９Ｃ５１单片机设计出通信接口，解决了微电阻率方法。基于ＣＬＳ３７００数控测井仪和ＦＭＳ仪采用８９Ｃ５１单片机设备出通信接口电路，解决了微电阻主扫描仪现现场实时处理中的瓶颈问题。     

STI process steps for sub-quarter micron CMOS

This paper presents Shallow Trench Isolation (STI) process steps for sub-1/4 μ CMOS technologies. Dummy active areas, vertical trench sidewalls, excellent gap filling, counter mask etch step and CMP end point detection, have been used for a 0.18 μm CMOS technology. Electrical results obtained with a 5.5 nm gate oxide thickness show good isolation down to 0.3 μm spacing. Good transistor performances have been demonstrated.     

复杂目标近场电磁散射的可视化计算方法

首次介绍了复杂目标近场散射计算的可视化方法。采用非均匀有理Ｂ样条曲面（ＮＵＲＢＳ）精确构造任意形状散射体，结合几何体近场透视变换和Ｚ－Ｂｕｆｆｅｒ技术实现了基于Ｗｉｎｄｏｗｓ平台的近场散射计算。提出广义雷达散射截面的概念并给出的若干算例。该方法充分利用了计算机３Ｄ图形设备的几何运算能力，运算速度快，严谨高，可扩展性好。     

Morphology and structure of poly(p-phenylene terephthalamide) crystallized from dilute organic solution

The high-temperature crystallization of poly(p-phenylene terephthalamide) (PPTA) from dilute organic solutions was achieved through the introduction of a non-solvent, or precipitating agent, at the desired crystallization temperature. The morphology and crystal structure were examined for crystals produced from PPTA polymer with two different molecular weights (M_w = 46000 and 3430 g mol⁻¹), using transmission electron microscopy. For the high-molecular-weight polymer, ribbon-like crystals were produced, while the low-molecular-weight polymer yielded small needles or platelets. In both cases, electron diffraction showed that the Northolt allomorph was obtained. For the high-molecular-weight polymer, the molecular axes were parallel to the ribbon axes in a chain-extended type structure. A hypothesis for the orientation of the low-molecular-weight PPTA in the small platelets, is also given.     

A comparison of leaf-spring with aircushion trailer suspensions in the transport environment

Packaging engineers need to be able to accurately determine the forces present in the shipping environment in order to protect packaged goods. The purpose of this study was to determine the vertical vibration levels measured in three separate truck-trailer suspension systems; conventional leaf-spring, conventional air-ride and damaged air-ride. The main conclusion reached in this study is that the air-ride suspension when maintained gives lower power density (PD) levels on all road surfaces studied. A damaged air-ride suspension and leaf-spring suspension are very similar in response frequencies, although the damaged air-ride produces higher vibration levels at lower frequencies.     

硼酸铝钕(NAB)晶体光学均匀性的测量

NAB晶体是一种综合性能较好的新型激光工作物质,有希望做成高效的小型固体激光器。本文介绍一种测量这种晶体光学均匀性的方法。 一般都采用在干涉仪上观测干涉图样来判定激光棒的光学均匀性。NAB晶体的吸收光谱曲线显示出其在可见光光谱区内有多个吸收峰。我们注意到:通常用做激光干涉仪光源的He-Ne激光器发射的632.8nm谱线正位于NAB晶体的一个吸收峰,并用输出约为45mW     

β—BBO晶体的电光性能

用干涉法测量了β－ＢＢＯ晶体的电光系数：γ２２＝２．６，γ３３＝０．２３，γ３１＝０．２５，γ５１＝－３．５×１０－１２ｍ／Ｖ。结果表明如果在Ｙ方向加电场，Ｚ方向通光，β—ＢＢＯ晶体可能制作成有应用价值的光开关。     

Growth of Fe on Si (100) at room temperature and formation of iron silicide

Low-energy electron diffraction (LEED), Auger electron spectroscopy and X-ray photoelectron spectroscopy (XPS) investigations of both the growth of an iron film on silicon (100) at room temperature and the subsequent formation of iron silicide are the subjects of this paper. An in-situ cleaned silicon (100) wafer without carbon or oxygen contamination exhibiting the known 2 × 1 reconstruction in the LEED pattern served as the substrate. Iron was deposited on this reconstructed surface at 300 K. The comparison of theoretical calculations based on three growth mechanisms with XPS data obtained with take-off angles of 0° and 50° clearly demonstrates a layer-by-layer growth of the iron film on silicon (100). At 300 K no formation of iron silicide was observed, although an interaction between iron and silicon could be detected at the interface. The formation of iron silicide was observed at annealing temperatures of 630–730 K. Quantitative XPS analysis yields the presence of FeSi₂, when the thickness is large enough. Neither the iron film on silicon nor the silicide shows any LEED pattern.     

Deep levels,electrical and optical characteristics in SnTe-Doped GaSb Schottky Diodes

The GaSb layers investigated were grown directly on GaAs substrates by molecular beam epitaxy (MBE) using SnTe source as the n-type dopant. By using admittance spectroscopy, a dominant deep level with the activation energy of 0.23-0.26 eV was observed and its concentration was affected by the Sb₄/Ga flux ratio in the MBE growth. A lowest deep-level concentration together with a highest mobility was obtained for GaSb grown at 550°C under a Sb₄/Ga beam equivalent pressure (BEP) ratio around 7, which should correspond to the lowest ratio to maintain a Sb-stabilized surface reconstruction. In the Hall measurement, an analysis of the temperature-dependent mobility shows that the ionized impurity concentration increases proportionally with the sample’s donor concentration, suggesting that the ionized impurity was introduced by an SnTe source. In addition, optical properties of an undoped p-, a lightly and heavily SnTe-doped GaSb layers were studied by comparing their photoluminescence spectra at 4.5K.