基于XC7V690T的在轨抗单粒子翻转系统设计

针对核心工业级SRAM型FPGA芯片XC7V690T抗辐照能力较弱、在轨运行期间存在较高单粒子翻转风险的问题,为了提高XC7V690T在轨抗单粒子翻转的能力及配置文件注数修改的灵活性,设计了一种基于XC7V690T的在轨抗单粒子翻转系统架构。其硬件架构主要由XC7V690T SRAM型FPGA芯片、AX500反熔丝型FPGA芯片以及多片FLASH组成;软件架构主要包括AX500反熔丝型FPGA对XC7V690T进行配置管理及监控管理,对XC7V690T进行在轨重构管理,XC7V690T通过调用内部SEM IP核实现对配置RAM资源的自主监控和维护。在轨实验结果表明,采用工业级SRAM型FPGA芯片XC7V690T的某航天器通信机在轨测试过程中成功进行了SEM纠错,通信机在轨工作正常,通信链路稳定,满足使用要求,表明该系统架构可以有效提升XC7V690T抗单粒子翻转能力,可以为其他SRAM型FPGA抗单粒子翻转设计提供借鉴与参考。     

面向航空环境的多时钟单粒子翻转故障注入方法

随着新型电子器件越来越多地被机载航电设备所采用,单粒子翻转(Single Event Upset, SEU)故障已经成为影响航空飞行安全的重大隐患。首先,针对由于单粒子翻转故障的随机性,该文对不同时刻发生的单粒子翻转故障引入了多时钟控制,构建了SEU故障注入测试系统。然后模拟真实情况下单粒子效应引发的多时间点故障,研究了单粒子效应对基于FPGA构成的时序电路的影响,并在线统计了被测模块的失效数据和失效率。实验结果表明,对于基于FPGA构建容错电路,采用多时钟沿三模冗余(Triple Modular Redundancy, TMR) 加固技术可比传统TMR技术提高约1.86倍的抗SEU性能;该多时钟SEU故障注入测试系统可以快速、准确、低成本地实现单粒子翻转故障测试,从而验证了SEU加固技术的有效性。     

一种SRAM型FPGA抗软错误物理设计方法

针对SRAM(Static Random Access Memory)型FPGA单粒子翻转引起软错误的问题,该文分析了单粒子单位翻转和多位翻转对布线资源的影响,提出了可以减缓软错误的物理设计方法。 通过引入布线资源错误发生概率评价布线资源的软错误,并与故障传播概率结合计算系统失效率,驱动布局布线过程。实验结果表明,该方法在不增加额外资源的情况下,可以降低系统软错误率约18%,还可以有效减缓多位翻转对系统的影响。     

基于PDSOI单粒子翻转物理机制的SPICE模型研究

通过研究半导体器件单粒子翻转的物理机制,利用Synopsys TCAD工具对基于中国科学院微电子所开发的0.35μm部分耗尽SOI器件进行单粒子翻转的模拟,讨论了器件模拟物理模型的选择,验证了理论分析的正确性,并对重离子撞击引起的瞬态电流过程进行分析.分析表明单粒子翻转存在两个放电阶段,第一阶段过量电子漂移扩散电流组成激增电流部分;第二阶段部分耗尽SOI器件寄生三极管放电机制以及过量空穴放电机制引起的缓慢电流放电＂尾部＂.结合激增电流的物理意义,提出合理的数学模型,推导出描述此电流的一维解析解;对于缓慢衰减的＂尾部＂电流,提出子电路模型,并基于SPICE三极管模型进行参数提取,着重讨论了单粒子翻转的敏感参数.最后给出了以反相器为例的SPICE模拟与TCAD模拟在瞬态电流,输出节点电荷收集,LET阈值的对比结果,验证了SPICE模型的合理性和精确性.     

SRAM single event upset calculation and test using protons in the secondary beam in the BEPC

The protons in the secondary beam in the Beijing Electron Positron Collider(BEPC) are first analyzed and a large proportion at the energy of 50-100 MeV supply a source gap of high energy protons.In this study, the proton energy spectrum of the secondary beam was obtained and a model for calculating the proton single event upset(SEU) cross section of a static random access memory(SRAM) cell has been presented in the BEPC secondary beam proton radiation environment.The proton SEU cross section for different characteristic dimensions has been calculated.The test of SRAM SEU cross sections has been designed,and a good linear relation between SEUs in SRAM and the fluence was found,which is evidence that an SEU has taken place in the SRAM.The SEU cross sections were measured in SRAM with different dimensions.The test result shows that the SEU cross section per bit will decrease with the decrease of the characteristic dimensions of the device,while the total SEU cross section still increases upon the increase of device capacity.The test data accords with the calculation results,so the high-energy proton SEU test on the proton beam in the BEPC secondary beam could be conducted.     

基于周期粒度的级间寄存器备份机制

单粒子翻转是空间环境下微处理器发生异常的重要诱因之一,随着集成电路特征尺寸的缩小,单粒子翻转不仅会引发单位错误,还会引发大量的多位错误,如何有效解决处理器所面临的多位故障是容错处理器设计面临的新挑战.本文提出了一种基于周期粒度的级间寄存器备份机制的容错方法,采用双流水线冗余结构,通过比较器对比两条流水线的级间寄存器以检测单粒子故障;以周期粒度对级间寄存器的内容进行备份,当检测到单粒子故障时,使用2个周期对流水线进行恢复;为避免脏数据流出流水线,在数据缓存和寄存器堆的入口设置写缓冲,通过延迟写入保证信息可靠性.本文基于实际的SPARC V8结构处理器,对提出的方法进行了具体实现,在实验平台上进行了仿真,仿真结果显示,本文提出的容错方法能够以一定的面积开销实现对SEU、SET、和MBU故障容错,加固处理器的主频最高可以提升70%.     

超深亚微米IC的宇宙射线辐射软失效研究

辐射引起的软失效一直是影响半导体可靠性的一个重大问题.特别是宇宙射线引起的在地球表面的高能中子,由于其特有的高穿透性很难有效屏蔽防护.介绍了其造成半导体器件软失效的失效机理,并利用加速软失效测试模型分别对90,65和45nm工艺的随机静态存储器的软失效率进行了分析,研究了该类中子造成的软失效率的影响因素及相关规律.据此预测了更高工艺技术产品的中子软失效率,在为芯片设计和制造阶段就对中子辐射可靠性的防护提供了一定的参考和依据.     

Novel SEU hardened PD SOI SRAM cell

A novel SEU hardened 10T PD SOI SRAM cell is proposed.By dividing each pull-up and pull-down transistor in the cross-coupled inverters into two cascaded transistors,this cell suppresses the parasitic BJT and source-drain penetration charge collection effect in PD SOI transistor which causes the SEU in PD SOI SRAM. Mixed-mode simulation shows that this novel cell completely solves the SEU,where the ion affects the single transistor.Through analysis of the upset mechanism of this novel cell,SEU performance is roughly equal to the multiple-cell upset performance of a normal 6T SOI SRAM and it is thought that the SEU performance is 17 times greater than traditional 6T SRAM in 45nm PD SOI technology node based on the tested data of the references.To achieve this,the new cell adds four transistors and has a 43.4%area overhead and performance penalty.     

Design of a hybrid non-volatile SRAM cell for concurrent SEU detection and correction

This paper presents a hybrid non-volatile (NV) SRAM cell with a new scheme for soft error tolerance. The proposed cell consists of a 6 T SRAM core, a resistive RAM made of a transistor and a Programmable Metallization Cell. An additional transistor and a transmission gate are utilized for selecting a memory cell in the NVSRAM array. Concurrent error detection (CED) and correction capabilities are provided by connecting the NVSRAM array with a dual-rail checker; CED is accomplished using a dual-rail checker, while correction is accomplished by utilizing the restore operation, such that data from the non-volatile memory element is copied back to the SRAM core. The simulation results show that the proposed scheme is very efficient in terms of numerous figures of merit.     

Early works on the nuclear microprobe for microelectronics irradiation tests at the CEICI (Sevilla, Spain)

Particle radiation effects are a fundamental problem in the use of numerous electronic devices for space applications, which is aggravated with the technology shrinking towards smaller and smaller scales. The suitability of low-energy accelerators for irradiation testing is being considered nowadays. Moreover, the possibility to use a nuclear microprobe, with a lateral resolution of a few microns, allows us to evaluate the behavior under ion irradiation of specific elements in an electronic device. The CEICI is the new CEnter for Integrated Circuits Irradiation tests, created into the facilities at the Centro Nacional de Aceleradores (CNA) in Sevilla-Spain. We have verified that our 3 MV Tandem accelerator, typically used for ion beam characterization of materials, is also a valuable tool to perform irradiation experiments in the low LET (Linear Energy Transfer) region.