衍射法细丝直径的精密测量

分析了激光衍射法测量细丝直径技术中影响精度的几个主要因素，研究了一种微弱衍射条纹的精密处理及识别技术，有效地提高了测量精度，实测结果表明，文中讨论的技术能在１０￣５０μｍ的范围内实现正负０．１μｍ的重复精度，分辨力优于０．０１μｍ。     

LDD方法在提高电路工作电压中的应用研究

研究了利用轻掺杂漏结构来制作高电源电压器件的工艺方法。分析了ＬＤＤ结构参数对器件击穿特性的影响，并结合实验结果对Ｎ＾－区的注入剂量，长度及引入的串联电阻进行了优化设计。     

NMOS器件两次沟道注入杂质分布和阈电压计算

分别考虑了深浅两次沟道区注入杂质在氧化扩散过程中对表面浓度的贡献。对两次注入杂质的扩散分别提取了扩散系数的氧化增强系数、氧化衰减系数和有效杂地系数，给出了表面浓度与工艺参数之间的模拟关系式，以峰值浓度为强反型条件计算了开启电压，文章还给出了开启电压、氧化条件、不同注入组合之间的关系式。     

具有透明波导的量子阱半导体激光器及其光集成技术

本文论述了具有透明波导结构的量子阱半导体激光器及其光集成技术的其本原理及主要优点。尤其在实现高功率窄光束输出的光集成器件方面更显出其独特的优点。     

深亚微米MOSFET衬底电流的模拟与分析

利用器件模拟手段对深亚微米ＭＯＳＦＥＴ的衬底电流进行了研究和分析，给出了有效的道长度，栅氧厚度，源漏结深，衬底掺杂浓度以及电源电压对深亚微米ＭＯＳＦＥＴ衬底电流的影响，发现电源电压对深亚微米ＭＯＳＦＥＴ的衬底电流有着强烈的影响，热载流子效应随电源电压的降低而迅速减小，当电源电压降低到一定程度时，热载流子效应不再成为影响深亚微米ＭＯＳ电路可靠性的主要问题。     

DS1620实现的X射线采集板温度自动控制

DR是目前非常先进的X射线成像技术，将其X射线采集板工作温度控制在最佳工作范围可采集更好的图像。本系统采用PC和单独控制双模块分别控制温度，利用半导体传感器DS1620进行四路温度采集，通过单片机和PC串口通信，用PC通过半导体制冷芯片来控制X射线采集板的工作温度，在通信故障时也可以通过单独控制模块来控制采集板的温度。     

Structural properties of phosphorous-doped polycrystalline silicon

The structural properties and hydrogen bonding of undoped and phosphorous doped polycrystalline silicon produced by step-by-step laser dehydrogenation and crystallization technique were investigated using Raman spectroscopy and hydrogen effusion measurements. At low laser fluences, E_L, a two-layer system is created. This is accompanied by the change in hydrogen bonding. The intensity of the Si–H vibration mode at 2000 decreases faster than the one at 2100 cm⁻¹. This is even more pronounced in phosphorous-doped specimens. The laser crystallization results in an increase of the hydrogen binding energy by approximately 0.2–0.3 eV compared to the amorphous starting materials.     

Electrochemical C-V Characteristics and Photoluminescence of a-C∶N Films

Amorphous carbon (a-C) films and amorphous carbon films incorporating with the nitrogen (a-C∶N) were deposited on silicon substrates in a radio-frequency driven plasma enhanced chemical vapour deposition system, while the surface electrical properties of films were investigated by electrochemical capacitance-voltage measurements. It was examined the effect of the interface defects on the properties and deduced that the conducting type of a-C∶N films was n-type. Subsequently, a comparative studies of a-C and a-C∶N films were performed by photoluminescence spectra depending on the temperature. With the decrease of the temperature, the main band with peak energy of 2.48 eV in the a-C∶N films was more intense compared with the other three bands caused by amorphous C in the a-C films.     

半导体衬底片的应力损伤及其行为

本文根据实际测量结果,一叙述了半导体衬底制片质量对外延生长的影响。特别是,讨论了在 GaAs、InP 衬底中,产生于切片、研磨和抛光加工过程中的机械损伤的影响。     

Improved direct bonding method of Nd:YVO4 and YVO4 laser crystals

We succeeded in the fabrication of bonded laser crystals composed of a neodymium-doped YVO₄ laser crystal (Nd:YVO₄) and its host crystals YVO₄ by a newly developed dry etching technique using an argon ion beam. The optical distortion caused by the bonded interface of size 5 mm × 6 mm was estimated to be 0.05λ at 633 nm. From the comparison of laser performance pumped by a laser diode, the bonded crystals could increase the laser output power by nearly twice that of the non-bonded crystals with the same degree of polarization of 99.2%. To analyze the mechanism of the enhanced reduction of the thermal load in the bonded crystals, numerical simulations with a finite-element method were also performed.