硅片和硅器件工艺中的背面损伤吸除技术

本文介绍了硅片背面的三种主要损伤吸除技术：机械损伤、激光辐照和离子注入技术。对这三种吸除技术的机理、工艺条件、应用情况和近来进展，作了详细的评述。     

对微弱激光辐射的探测

由于面临越来越严重的激光制导武器的威胁 ,对来袭威胁进行早期预警日趋重要。概要介绍了微弱激光辐射探测技术国外研究现状及发展趋势。对微弱激光辐射探测关键技术进行了研究探讨。     

Pulsed KrF excimer laser annealing of silicon solar cell

The pulsed KrF excimer laser annealing of silicon films for solar cell with EBEP-CVD and LP-CVD was studied theoretically and experimentally. Three-dimensional thermal diffusion equation for microcrystalline and amorphous silicon was solved by using the finite difference methods. The results of our heat-flow simulation of laser re-crystallization in a laser irradiation with 50 ns pulse duration almost agree with the experimental results in re-crystallization depth of 0.7 μm for microcrystalline silicon (EBEP-CVD) and 0.4 μm for amorphous silicon (LP-CVD) in a single pulse excimer laser annealing.     

Non-contact methods of measuring moisture concentration in external layers of building partitions II—Monitoring of the water vapour condensation on porous surfaces

This paper present the results of the investigation into a potential application of laser radiation for the detection of phase transition processes occurring on the surface layers of porous materials. An attempt was made to discuss in the approximation equations, the relationships between coefficients of the reflected light, the temperature and humidity of the surrounding environment. Laser light reflected from the porous surface carries information about the roughness of the structure. The presence of water microdrop on the surface of the porous material, as a result of condensation and thus a phase transition, leads to the phase displacement of individual rays, which is represented by different images. Therefore, a comprehensive analysis of the reflected light parameters allows a dynamic study of the phase transition phenomena without mechanical intervention.     

激光远距作用的机制与效应

本文定量分析激光远距作用的机理并对它们在治癌中的作用作简要的论述。     

Investigation of Ni/4H-SiC diodes as radiation detectors with low doped n-type 4H-SiC epilayers

The development of SiC minimum ionising particle (MIP) detectors imposes severe constrains in the electronic quality and the thickness of the material due to the relatively high value of the energy required to produce an electron–hole pair in this material by MIP against the value for Si. In this work, particle detectors were made using semiconductor epitaxial undoped n-type 4H-SiC as the detection medium. The thickness of the epilayer is on the order of 40 μm and the detectors are realised by the formation of a nickel silicide on the silicon surface of the epitaxial layer (Schottky contact) and of the ohmic contact on the back side of 4H-SiC substrate. The low doping concentration (6×10¹³ cm⁻³) of the epilayer allows the detector to be totally depleted at relatively low reverse voltages (100 V). We present experimental data on the charge collection properties by using 5.486 MeV -particles impinging on the Schottky contact. A 100% charge collection efficiency (CCE) is demonstrated for reverse voltages higher than the one needed to have a depletion region equal to the -particle extrapolated range in SiC. The diffusion contribution of the minority change carriers to CCE is pointed out. By comparing measured CCE values to the outcomes of drift–diffusion simulation, values are inferred for the hole lifetime within the neutral region of the charge carrier generation layer.     

Electronic and optical analysis of high-efficiency photovoltaic materials based on a GaN semiconductor

An ab initio study using the local spin density approximation of the electronic and optical properties of materials where Cr transition metal substitutes for N in the GaN host semiconductor with an atomic concentration of 1.56% is presented. This material, characterized by an isolated and partially filled intermediate band, is a candidate for high-efficiency solar cells. The atomic and orbital composition of this band has been analyzed showing that is mainly made up of a t-group orbital of the transition metal. The absorption coefficient theoretical results show a sub-gap absorption with respect to the host semiconductor which could lead to an increase in solar conversion efficiency.     

Thermal Generation of Residual Stress Fields for Purpose of Distortion Minimization

Thermal treatments of steel components with the goal of hardening often result in distortion by releasing the residual stresses which were brought into the specimen during the preceding processing steps. The goal of the presented work is the minimization of this distortion. By generating definite residual stress fields and investigating the resulting distortion, the distortion mechanism can be observed in detail. A flexible and reproducible way to generate such residual stress fields inside a specimen is by means of local thermal treatment with a laser beam. Computer simulations as well as experiments were carried out using an idealized tooth of a gearwheel (finger sample) as a model system. The deformation of the samples due to the laser heat treatment and the stress fields generated inside the samples were determined with respect to different process parameters.     

1等标准光滑圆柱环规检测装置

本装置是在具有高精度导轨的SIP三坐标测量机上架设激光干涉仪作为测量标准器，利用电感测微仪作为瞄准器，使测量可以直接溯源到激光波长，实现了1等标准光滑圆柱环规的高精度测量。装置对φ50mm标准环规直径测量的不确定度达到70．15μm。通过与瑞士国家计量局和国家计量院的比对测量证实，无论在国内还是国际环规测量方面，该装置已达到先进水平。     

直接探测测风激光雷达的性能分析

综述了激光雷达大气风场测量的方法，提出了采用直接探测到量三维风场分布的F-P干涉仪方法，简述了测量原理，分析了系统的性能和测量误差，比较了基于分子散射和气溶胶散射的系统测量精度，给出了基于瑞利散射的激光雷达系统方案。