发光二极管的研究现状与发展趋势

Ⅱ－Ⅵ族，Ⅲ－Ⅴ族化全物半导体是制作显示器件的重要材料，随着制作工艺日趋成熟，发光二极管已广泛地应用于 民经济各部门。要方要介绍了国内外发光二有管的研究两头和发展趋势。     

Mid-Temperature Synthesis of CeO2-TiO2 Complex Compound and Its XRD Structure Study

TiO2 andCeO2 aresemiconductormaterials .TiO2hasthepropertiesofphoto catalysis[1] whileCeO2 hastheabilityofoxygenstorageandcanpromotethedispersionofprecionsmetalsonthesupporter[2 ] .CeO2 TiO2 com plexcompoundwasusedascatalystandspecialfunction almaterial[3～ 5] .ThetraditionalsynthesisofCeO2 TiO2complexcompoundisbyceramicmethodthatusesoxidesasrawmaterialsanditiscalcinedabove 130 0℃[6～ 8] .However ,thestructureandmicrostructureofthecomplexcompoundarenotsuitableforcatalystandfunctionalm…     

GaN材料系列的研究进展

ＧａＮ及其合金作为第三代半导体材料具有一系列优异的物理和化学性质，在光电子器件，高温大功率电子器件及高频微波器件应用方面具有广阔的前景，已成为当前高科技领域的研究重点，论述了这种材料的研究历史与发展现状，物理与化学性质，薄膜的生长方法及在光学电子和微电子器件应用于方面的研究进展。     

GaAlInP发光材料计算的经验公式

根据已经发表的实验数据，针对镓铝铟磷发光材料的提出了一组经验公式及相应的曲线，作为ＧａＡｌＩｎＰ可见光材料设计的依据或参考。     

1μm宽硅深槽刻蚀技术

介绍了硅深槽刻蚀的基本原理和影响刻蚀效果的几个主要工艺因素。提出了一种实现１μｍ宽的硅深槽刻蚀工艺途径；并给出了１μｍ宽、８μｍ深、侧壁及底部光洁的硅深槽刻蚀工艺条件。     

全耗尽CMOS／SOI技术的研究进展

ＳＯＩ材料技术的成熟，为功耗低，抗干扰能力强，集成度高，速度快的ＣＭＯＳ／ＳＯＩ器件的研制提供了条件，分析比较了ＣＭＯＳ／ＳＯＩ器件与体硅器件的差异，介绍了国外薄膜全耗尽ＳＯＩ技术的发展和北京大学微电子所的研究成果。     

Studies on Three—electrode Semiconductor Lasers

Using the ray trace method,three-section semiconductor lasers are studied .An analytic expression of output power for the three-section semiconductor lasers is derived for the first time.Frome this expression,threshold condition is also obtained.     

锥形有源条半导体光放大器增益和饱和特性分析

以行波半导体光放大器速度方程为基础，采用传输矩阵方法，对锥形结构半导体光放大器的增益和饱和特性进行理论研究。讨论了不同锥形长度，不同结构时的增益和饱和特性差异。理论研究表明，锥形结构能改善半导体光放大器的偏振灵敏度。在同一锥度下，长锥形长度能提高饱和增益，降低偏振度。在进行半导体光放大器有源条结构设计时要综合考虑锥度及锥形长度的影响，以实现结构优化 。     

Determination of generation lifetime fromC-t transients under linear voltage ramp bias

When a linear voltage ramp is applied to the gate of a MOS capacitor, a capacitancetime (C-t) transient is observed. The MOS capacitor is biased into strong inversion before applying the voltage ramp in order to eliminate surface generation. FromC-t transient curve obtained experimentally the minority carrier generation lifetime in semiconductor can be determined. The experimental results show that for the same sample the lifetimes extracted fromC-t curves under varying voltage sweep rates are close each other, and they are consistent with the lifetimes extracted by saturation capacitance method.     

Suitable test structures for submicron ion beam analysis

For the precise determination of the sizes of submicron beam spots test structures with an excellent edge definition are required. For this purpose a semiconductor heterostructure consisting of an 1.62 μm GaInP epi-layer grown on (0 0 1) GaAs has been made, which provides atomically sharp edges for beam spot size measurements. Since the sample has been thinned down by standard transmission electron microscope (TEM) preparation techniques, it can be used for both PIXE and STIM. The sample has been investigated with a TEM and the ion nanoprobe LIPSION. A one-dimensional beam profile in the low current mode was determined by a STIM measurement using 2 MeV protons and yielded a FWHM of (41±4) nm, which is the smallest value reported so far for high energy nuclear micro- and nanoprobes. Furthermore we present nickel nanowhiskers produced at the GSI Darmstadt by electrochemical preparation of etched ion track membranes that have been used to obtain two-dimensional images of the shapes of submicron beam spots. For these measurements a scan over a single nickel nanowhisker having a diameter of 220 nm and a height of about 6 μm was performed.