Experimental setup for non-destructive measurement of tunneling currents in semiconductor devices

A new experimental setup used to perform non-destructive measurement of electrical quantities on semiconductor devices is described in this paper. The particular case of tunneling current measurement in n-type semiconductor–oxide–semiconductor (SOS) capacitors, whose dielectrics play a crucial role in non-volatile memories, has been investigated. When the gates of such devices are polarized with a sufficient bias voltage while the other terminals are grounded, tunnel conduction of electrons through the thin oxide layer is allowed. Typical tunneling current measurements obtained with this advanced setup are presented and compared to the results yielded by older standard experimental protocols. An application to the experimental observation of the temperature dependence of the tunneling current is proposed. Conclusions about the benefits of this kind of electrical measurements are then drawn.     

Growth mechanism and gas-sensing characteristics of organic-additive-free zinc oxide of various shapes

Zinc oxide is widely used in gas sensors, solar cells, and photocatalysts because of its wide bandgap and exciton binding energy of 60 meV in various metal oxides. To use ZnO as a gas sensor, it is necessary to synthesize it with surface defects and a large specific surface area. In this study, hydrothermal synthesis without surfactants was employed to obtain organic-additive-free ZnO. For morphology control, we varied the ratio of the hydroxide ion concentration to the zinc ion concentration. To confirm the growth mechanism of ZnO, we performed X-ray diffraction, scanning electron microscopy, and transmission electron microscopy analyses. Raman spectroscopy and photoluminescence measurements were performed to analyze the surface properties. The Brunauer–Emmett–Teller method and probe stations were used to measure the specific surface area and sensitivity of the gas sensor, respectively. The results confirmed that flower-shaped ZnO is the most suitable gas-sensing material.     

Simple size-controlled fabrication of Zn2SnO4 nanostructures and study of their behavior in dye sensitized solar cells

Zn₂SnO₄ nanostructures were obtained via facile and rapid co-precipitation approach in presence of amines with different long chain as a novel basic and capping agents. The effect of different amines such as NH₃, ethylenediamine, triethylenetetramine, tetraethylenepentamine on the size of Zn₂SnO₄ nanostructures were investigated. The results demonstrated that applying the appropriate amount of organic amine could be effective in particle size control. The obtained nanostructure products were specified by powder X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectra, scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray analysis (EDX) and ultraviolet–visible (UV–vis) spectroscopy. Dye sensitized solar cells (DSSC) were created by the constructed electrodes as working electrode and then were studied by current density–voltage (J–V) curve. It was found that incorporating of TiO₂ nanoparticles to optimized Zn₂SnO₄ nanostructures has significant role on the constructed DSSCs photovoltaic properties.     

Scratching by pad asperities in chemical-mechanical polishing

In the fabrication of micro- and nano-scale semiconductor devices and electromechanical systems, the chemical-mechanical polishing (CMP) process is extensively employed. During the CMP process, undesirable scratches are produced on metal-interconnect and low-k-dielectric surfaces by the softer pad asperities. This paper presents contact mechanics models for the initiation of scratching in terms of the pad asperity geometry, the interfacial friction, and the mechanical properties of materials. Results of dry, wet and lubricated experiments on Cu coatings qualitatively validate the theoretical models. To mitigate scratching by pad asperities during CMP, the developed models suggest that the friction coefficient be kept below 0.2.     

Receptor function of small semiconductor crystals with clean and electron-traps dispersed surfaces

Theoretical exploration has been conducted to formulate the receptor function and response of a semiconductor gas sensor using thin plate-like crystals. The receptor function can be formulated over a wide range of depletion from conventional one (regional depletion) to new type one (volume depletion) by focusing attention on how the surface density of adsorbed oxygen ions (O⁻) is related with chemical moiety outside the crystals and physical moiety inside. The responses to gases thus derived are inversely proportional to the thickness of the plates used in the range of volume depletion. Electron-traps, if dispersed on the crystals, are shown to exert drastic effects in promoting sensitivity to gases.     

Efficient polymer nanocrystal hybrid solar cells by improved nanocrystal composition

We demonstrate the importance of the nanocrystal surface treatment and the inorganic composition for hybrid solar cells. Mixtures of CdSe nanorods and CdSe quantum dots integrated in hybrid solar cells together with the conjugated polymer poly[2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b']-dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)] (PCPDTBT) perform better than nanorod and quantum dot only based devices. In addition larger sized quantum dots show a similar improvement after integration in respective solar cells. Power conversion efficiency values exceeding 3% are observed. A first result on the shelf lifetime of such a device is highlighted.     

数控多线切割技术及发展趋势

数控多线切割技术实现了集成电路制造技术的跨越式发展,已成为数控机床制造技术及集成电路制造技术的重要标志,引起了发达国家的广泛重视。论述了数控多线切割技术的特征;介绍了我国自行研制的XQ120和XQ300系列数控多线切割机床并与国外产品进行比较;指出了开发大型数控多线切割机床的技术难点;阐述了我国研发具有自主知识产权的大型数控多线切割机床设备的必要性。     

12MeV、4.2kW电子直线加速器的辐照应用

研究了能量为６～１２ＭｅＶ、平均束功率为４．２ｋＷ的工业辐照用电子直线加速器的应用。结果表明,它在对改装半导体器件（二极管、三极管、可控硅）参数特性,大蒜辐照抑制发芽和食品辐照杀菌保鲜综合辐照加工方面更为合适。     

便携式离子注入型半导体核辐射仪的研制

采用离子注入技术研制的便携式半导体核辐射仪,其各项技术指标均有很大的改进和提高,达到了国内先进水平,可广泛用于空间和环境中X射线和γ射线的探测领域.     

碳化硅肖特基器件多层金属化技术研究

碳化硅作为近年来迅速发展起来的一种宽禁带半导体材料,具有宽禁带、高击穿电场、高载流子饱和漂移速率、高热导率、高功率密度等优点,是制备大功率、高温、高频器件的理想材料.欧姆接触的实现是碳化硅器件制造工艺的关键.为保证欧姆接触的低接触电阻和高稳定性,基于对碳化硅材料金属化技术的理论分析,进行大量工艺实验,调整工艺参数,并进...