Si_（1－x）Ge_x／Si定向耦合器的研制

在运用ＳｉＧｅ脊形波导单模条件和有效折射率法分析ＳｉＧｅ／Ｓｉ定向耦合器结构参数的基础上，采用分子束外延和各向异性腐蚀技术制备出Ｓｉ１－ｘＧｅｘ／Ｓｉ（ｘ＝０．０５）单模定向耦合器．在波长为１．３μｍ时，平均串音小于－１８．１ｄＢ，输出功率耦合效率达到９８．１％     

Design and Manufacture of GeSi/Si Superlattice Nanocrystalline Photodetector

According to Maxwell＇s theory, the optical transmission characteristics in GeSi/Si superlattice nanocrystalline layer have been analyzed and calculated. The calculated result shows that when the total thickness L is 340 nm, the single mode lightwave can be transmitted only at periodic number M≥15.5. In addition, at the direction of transmission, when the transmission distance is larger than 500 μm, the lightwave intensity is decreased greatly. Based on the above parameters, the design and manufacture of GeSi/Si superlattice nanocrystalline photodetector are carried out.     

浅谈诺兰达工艺控制

介绍了诺兰达炉氧平衡控制方法 ,对控制中常见的问题总结了一些相应措施。     

硅粉/酚醛制备低成本碳化硅陶瓷复合材料

以低成本的硅粉和酚醛为原料 ,采用浆料浸渍 热压成型 反应烧结法制备了Cf SiC单向板 ,并对工艺条件进行了探讨。制备得到的单向板的弯曲强度达到 45 6 .8MPa ,断裂韧性达到 7.94MPa·m1 2 。     

Hot carrier magnetophonon spectroscopy of semiconductors in high magnetic fields up to 40 T

Hot carrier magnetophonon resonances of n-type Si, short channel InP and p-type InSb were investigated in pulsed high magnetic fields up to 40 T. Using a recently developed high resolution technique in pulsed high fields, many new features of the hot carrier-phonon interactions in high magnetic fields were found.     

The aligned Si nanowires growth using MW plasma enhanced CVD

New and simple modification of vapor-liquid-solid process for Si nanowires growth based on microwave plasma enhanced chemical vapor deposition that uses solid-state Si target as a source of Si atoms was developed. The method was temperature and pressure controlled evaporation of solid phase of Si source in hydrogen microwave plasma. Aligned growth of Si nanowires was performed in local electric field by applying of constant negative bias to substrate holder. Deposited Si nanowires were studied by scanning electron microscopy (SEM), Raman and photoluminescence spectroscopy. Correlation between photoluminescence spectra and Si nanowires properties were studied.     

UV法测定聚甲基丙烯酸酯纳米粒中胰岛素的包封率

建立一种简便易行的测定聚甲基丙烯酸酯胰岛素纳米粒中游离胰岛素含量方法.用Nanosep OD100C33超滤膜分离纳米粒和游离药物,在276 nm处测定药物的吸光度,建立胰岛素含量测定方法,并对线性、回收率、精密度等指标进行考察,最后测定各种胰岛素和载体比例混合的纳米粒的包封率.结果发现,该超滤膜能较好地分离纳米粒和游离的药物,在0.11～1.10 u/mL范围内,药物在276 nm的吸光度和浓度存在良好的线性关系(r=0.999 8),线性方程为A=0.868 8C-0.001 6,高、中、低3种浓度的回收率和精密度良好.该方法操作简单、结果可靠,可用于胰岛素纳米粒中药物包封率的测定.     

硅表面上的纳米量子点的自组织生长

纳米半导体量子点以其所具有的新颖光电性质与输运特性正在受到人们普遍重视。作为制备高质量纳米量子点的工艺技术 ,自组织生长方法倍受材料物理学家的青睐。而如何制备尺寸大小与密度分布可控的纳米量子点更为人们所注目。因为这是关系到纳米量子点最终能否器件实用化的关键。文中以此为主线 ,着重介绍了各种 Si表面 ,如常规表面、氧化表面、台阶表面以及吸附表面上 ,不同纳米量子点的自组织生长及其形成机理 ,并展望了其未来发展前景     

长颗粒(柱状晶)Si3N4陶瓷的研究及进展

Si3N4陶瓷材料由于具有很好的高温性能及高的力学性能，而被广泛地用于结构陶瓷，如切削刀具等。然而，因为其对缺陷很敏感，故易受灾难性的失效。人们发展了多种Si3N4增韧陶瓷，其中自增韧由于一些优异的性能越来越受到人们的重视。在此文中，着重介绍了影响Si3N4陶瓷长颗粒(柱状晶)晶粒生成的因素，并介绍了国内外对长颗粒Si3N4晶的控制研究。     

Importance of the choice of the profile model for ap-n junction in the location of deep levels

The energy levels introduced by Pt in silicon have been measured in a non-abruptp ⁺-n junction using constant-capacitance thermal-emission rate measurements and a numerical simulation of high frequency-capacitance. Two levels have been detected with activation energies of:E _c -E _T = 0.22 eV with acceptor character andE _T -E _v = 0.34 eV with donor character. The sample preparation and diffusion of Pt is similar to previous works in which an acceptor levelE _c -E _T = 0.34 eV was found instead of or besides a donorlike levelE _T -E _v = 0.34 eV. Our numerical calculation of the shallow-impurity profile points to the existence of a gradual transition near the metallurgical junction for these samples. We have demonstrated that the well-known model of an abrupt junction is not appropriate for these types of junctions, and could lead to errors in the location attributed to the detected levels. Simulation of the electrical behavior leads to the non-existence of the acceptor levelE _c −E _T = 0.34 eV located in then-side of the junction.