Surface electronic states in metal-porous silicon-silicon structures

The character of electronic states in porous silicon (PS)-Si, Pd-PS interfaces, and/or PS bulk at the formation of the metal-PS-silicon heterostructure was studied. The energy parameters were estimated using the deep-level transient spectroscopy and capacitance-voltage characteristics at the accounting of the voltage drop distribution along the structure. The analytical expression for voltage drop distribution along dielectric layer, porous layer and space charge region in silicon was obtained by solving the equation for continuity of the electrostatic induction vector. The electronic states studied were shown to manifest the quasi-continuous sub-band in the energy gap if the porous layer was 30-nm thick. Their density increased, as the energy position was being transformed to a deeper energy level of E_v+0.81 eV at the PS layer growing to 90 nm wide.     

Solution of large deformation contact problems with friction between Blatz-Ko hyperelastic bodies

The present paper is devoted to the analysis of the contact problems with Coulomb friction and large deformation between two hyperelastic bodies. One approach to separate the material nonlinearity and contact nonlinearity is presented. The total Lagrangian formulation is adopted to describe the geometrically nonlinear behavior. Nondifferentiable contact potentials are regularized by means of the augmented Lagrangian method. Numerical examples are carried out in two cases: rigid-deformable contact and deformable-deformable contact with large slips. The numerical results prove that the proposed approach is robust and efficient concerning numerical stability.     

Electron transport in InGaO3(ZnO)m (m=integer) studied using single-crystalline thin films and transparent MISFETs

We have investigated the characteristics of transparent metal-insulator-semiconductor field-effect transistors (MISFETs) fabricated using InGaO₃(ZnO)_m (m=integer) single-crystalline thin films as n-channel layers and amorphous alumina as gate insulator films. The MISFETs exhibit good characteristics such as insensitivity to visible light illumination, off-current as low as ∼1 nA with a positive threshold voltage of ∼3 V and on/off current ratio of 10⁵. The field-effect mobility increased from ∼1 to ∼10 cm² (V s)⁻¹ as the m-value increased. Room temperature Hall mobility also increased. However, unexpectedly these values were lower than the field-effect mobility. It is explained by existence of shallow localized state in the homologous compounds.     

Alleviation Effect of Lanthanum on Cadmium Stress in Seedling Hydroponic Culture of Kidney Bean and Corn

Since1970s,rare earths(RE)have been exten-sively used as micro-fertilizers for crops in China.Ithas already been proved that REcani mprove the pro-duction and quality of crops.However,there havebeen a fewinvestigations about using RE as regulatorin pollution ecology.For example,An et al[1]studiedthe effects of O3on wheat growth and the protectiveeffect of RE.Yan and Zhou et al[2,3]discussed theprotective effect of RE on plants under acid rainstress.Jia et al[4]and Hu et al[5]reported th…     

Structure of rapidly solidified aluminum alloys

This paper is a summary of an extensive research program carried out by the authors on the structure of rapidly solidified aluminum alloys; and a comparison with the work of others also involved in this field. The paper discusses the changes in the dendritic and non-dendritic structure of the matrix at cooling rates from 10^–3 to 10¹⁰ K/s and discusses the hetergeneity of the structure caused by interdendritic-segretion during solidification.     

基于面像识别技术的公安网上追逃系统

研究了公安网上追逃系统的体系结构和系统的程序流程，阐述了ASP COM 后台比对服务的3层B／S模式面像网上比对的实现方法，最后给出系统的性能指标和特点。     

岩金矿山采空区处理现状及对策

岩金矿山以浅眼留矿法为代表的空场采矿法为主要开采手段，约占50％，每年形成数百万m^3采空区，并绝大多数未进行专门处理。本文介绍数例岩金矿山采空区处理方法及效果与对策，供有关企业参考。     

P、V操作的新探讨

P、V操作的概念以及使用在操作系统中非常重要、这里从一些新颖的角度来分析P、V操作，用P、V操作来实现进程的同步与互斥以及一种简单易行的逻辑关系则可以解决P操作嵌套时的执行次序。     

矿用立式旋风水膜除尘器除尘性能的试验研究

本文通过对立式旋风水膜除尘器除尘性能的模型试验,揭示了几个主要参数对其除尘性能的影响,确定了合理的取值范围,对该种除尘器的设计和应用提供了依据。     

厚度控制技术在中厚板轧制生产中的应用

本文探讨了影响中厚板厚度波动的因素，结合安钢中板厂2800mm轧机按合同轧制一批交货重量不大于理论重量船板的生产实践，总结了实际生产中实现高精度厚度控制的有效方法。