硬盘铝基片擦洗机的PLC控制

文章介绍了为１３片硬盘铝基片擦洗机设计的气动系统和电气控制系统,硬盘铝基片擦洗机的自动循环用ＯＭＲＯＮ２００Ｈ型ＰＬＣ控制。整机调试表明气、电一体化控制非常成功     

Effects of substrate temperature on electrical and structural properties of copper thin films

This paper addresses the effects of substrate temperature on electrical and structural properties of dc magnetron sputter-deposited copper (Cu) thin films on p-type silicon. Copper films of 80 and 500 nm were deposited from Cu target in argon ambient gas pressure of 3.6 mTorr at different substrate temperatures ranging from room temperature to 250 °C. The electrical and structural properties of the Cu films were investigated by four-point probe and atomic force microscopy. Results from our experiment show that the increase in substrate temperature generally promotes the grain growth of the Cu films of both thicknesses. The RMS roughness as well as the lateral feature size increase with the substrate temperature, which is associated with the increase in the grain size. On the other hand, the resistivity for 80 nm Cu film decreases to less than 5 μΩ-cm at the substrate temperature of 100 °C, and further increase in the substrate temperature has not significantly decreased the film resistivity. For the 500 nm Cu films, the increase in the grain size with the substrate temperature does not conform to the film resistivity for these Cu films, which show no significant change over the substrate temperature range. Possible mechanisms of substrate-temperature-dependent microstructure formation of these Cu films are discussed in this paper, which explain the interrelationship of grain growth and film resistivity with elevated substrate temperature.     

磁性Fe⁃Au复合材料的制备及SERS性能

表面增强拉曼散射光谱(SERS)是一种广泛应用于低浓度分子物种识别并且能够提供结构信息的技术。SERS检测中基底纳米材料的颗粒大小、形状和空间分布对检测结果有着重要影响。探索制备新型纳米结构可以为SERS研究和应用提供新的活性基底和理论基础。由于具有良好的传质和吸附性能,多孔材料广泛应用于构筑SERS活性基底纳米复合物。以多孔磁性纳米材料作固相载体,通过水热合成多孔纳米α⁃Fe2O3,再将其还原成Fe,使Fe的表面也有孔道存在。在Fe表面自组装Au纳米材料构筑SERS基底,以对巯基苯胺（PATP）和三聚氰胺水溶液作为目标分子,对其SERS性能进行测试。调控Au纳米粒子尺寸大小,考察其对SERS性能影响,得到50 nm Au具有最优性能。利用扫描电子显微镜（SEM）、X 射线衍射(XRD)和N2吸附等表征手段,对纳米复合物结构及组成进行分析表征。结果表明,得到了一种同时具有吸附和检测效果的纳米复合物SERS基底。     

Improved Non-uniformity Correction Method for Uncooled Microbolometer

The uncooled microbolometer has a severe temperature requirement for non-uniformity correction. An improved two-point non-uniformity correction method is proposed, which can operate in wider uniform substrate temperatures. This method can control the bias voltage of MOS transistors by memory and DAC to meet two restrictions about responsivity and offset before traditional two-point calibration is implemented. The simulation results seem that this non-uniformity correction can work at uniform substrate temperature with fluctuant range of 4K.     

基于基片集成同轴线的双馈点圆极化天线

提出了一种采用基片集成同轴线(SICL)馈电的双馈点圆极化微带贴片天线。具体通过多馈点法实现圆极化,并通过背腔加载提高增益,增加带宽,减小后瓣,降低互耦,提高天线性能。经过仿真验证,该天线能够在42.42～56.69 GHz之间实现S₁₁<-10 dB(相对带宽为28.8%@51 GHz),在45.26～48.08 GHz之间实现轴比小于3 dB,最大增益8.9 dBi。     

半导体器件管脚漏电流检测技术的研究

介绍了一种半导体焊盘(PAD)与衬底(SUBTRATE)之间的漏电流检测的方法,这种漏电流检测的目的是为了判断芯片管脚是否完好地连接在引脚上。它的特点是数字化接口和快速高效的处理能力,可以在数毫秒之内完成IC芯片的管脚到衬底之间的漏电流甚至漏电容检测。系统用数字电路以嵌入式单片机为核心,模拟电路以运放和检测电路组成,是一个独立的开放式架构,可以和带有RS422/485接口的任何计算机或控制器通信,且可在线编程以便工艺参数修改。     

Influence of growth parameters on the microstructures of erbium films deposited on Si(111) substrates

Erbium films were grown on single crystal Si(111) substrates by electron beam vapor deposition. The microstructures of the erbium films were systematically investigated by X-ray diffraction, scanning electron microscopy, and energy dispersive spectroscopy. Results indicate that the surface morphologies and microstructures of the erbium films with Si as substrates are susceptible to the substrate temperatures when the deposition rates are fixed. The pure erbium films with columnar grains were obtained at temperatures below 200 °C, but in the films grown at temperatures higher than 350 °C, some pinholes that are composed of erbium silicides were found. The pinholes have triangular shapes which is in accordance with the geometry of the underlying Si(111) substrate. The films grown at a substrate temperature equal or greater than 450 °C have cracks which would be formed due to the different shrinkage degree of erbium and silicon when the substrate temperature was cooled down to room temperature. The films grown at 200 °C show the (002) preferred orientation, which is consistent to the prediction by the theory of surface energy minimization. The deposition rate and deposition time are considered as factors to affect the reaction of the erbium film and the silicon substrate.     

Influence of substrate rotation speed on the nanostructure of sculptured Cu thin films

Different rotation speeds of the substrate about its surface normal were used to produce sculptured copper thin films of ∼ 90 nm thickness. X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM) were employed to obtain nano-structure and morphology of these films. Their optical properties were measured by spectrophotometry in the spectral range of 340-850 nm. Real and imaginary refractive indices, film thickness and fraction of metal inclusion in the film structure were obtained from optical fitting of the spectrophotometer data.     

基片集成波导功分器仿真设计

为了实现毫米波电路小型化设计,探讨了基片集成波导(SIW)功分器的工作原理,介绍了SIW功分器的设计规则和关键技术,使用HFSS仿真设计并实际制作了一个Ka波段SIW功分器,测试结果表明其在毫米波频段具有良好的性能,且结构简单,易于生产。     

High power impulse magnetron sputtered p-type γ-titanium monoxide films: Effects of substrate bias and post-annealing on microstructure characteristics and optoelectrical properties

In view of wide potential use as p-type oxide semiconductor of titanium monoxide (TiO), it is deposited in this work by using high power impulse magnetron sputtering (HIPIMS), which is known to provide less hysteresis effect in reactive sputtering and better control in stoichiometry. A strong correlation among the preparation parameters on the microstructure and optoelectrical characteristics of the obtained Ti-O films are investigated.Experimental results show that the crystallinic cubic γ-TiO can be directly grown on unheated glass substrate. In regard to the effects of substrate bias and post-annealing, the as-grown γ-TiO transfers into rutile (R-TiO₂) at a critical substrate bias voltage of −125 V or post-annealing temperature of 500 °C. For the purpose of p-type channel layer in transistor, the optimum γ-TiO film exhibiting a high hole mobility of 8.2 cm²/V s is grown at the substrate bias voltage of −25 V and followed by the post-annealing at 400 °C.