TFT工艺中的反应性离子刻蚀

对ＴＦＴ器件工艺中的反应性离子刻蚀技术进行了研究,给出了ＴＦＴ器件工艺中常见薄膜刻蚀速率的实验结果,并讨论了掺杂气体（如Ｈ２、Ａｒ等）对刻蚀速率的影响。     

Flexible electronics: 12‐GHz Thin‐Film Transistors on Transferrable Silicon Nanomembranes for High‐Performance Flexible Electronics (Small 22/2010)

Multigigahertz flexible electronics are attractive and have broad applications. A gate‐after‐source/drain fabrication process using preselectively doped single‐crystal silicon nanomembranes (SiNM) is an effective approach to realizing high device speed. However, further downscaling this approach has become difficult in lithography alignment. In this full paper, a local alignment scheme in combination with more accurate SiNM transfer measures for minimizing alignment errors is reported. By realizing 1 μm channel alignment for the SiNMs on a soft plastic substrate, thin‐film transistors with a record speed of 12 GHz maximum oscillation frequency are demonstrated. These results indicate the great potential of properly processed SiNMs for high‐performance flexible electronics.     

用于TFT-LCD源驱动电路的面积节约型DAC

提出一种用于TFT-LCD的新型数模转换器（DAC）,详细地阐述了它的工作原理及其设计与实现。这种DAC与传统的电阻串DAC的结构完全不同,在传统DAC中电阻串是不可或缺的组成部分,而文章提出的DAC由计数器、比较器、传输门和其他组合电路组成,它克服了传统的电阻串DAC当输入数据位宽增加时所遇到的面积问题。用Spectre仿真的结果表明,该种结构DAC的转换精度完全满足高灰度等级TFT-LCD源驱动电路的设计需求。     

ZnO thin films prepared by atomic layer deposition and rf sputtering as an active layer for thin film transistor

Recently, the application of ZnO thin films as an active channel layer of transparent thin film transistor (TFT) has become of great interest. In this study, we deposited ZnO thin films by atomic layer deposition (ALD) from diethyl Zn (DEZ) as a metal precursor and water as a reactant at growth temperatures between 100 and 250 °C. At typical growth conditions, pure ZnO thin films were obtained without any detectable carbon contamination. For comparison of key film properties including microstructure and chemical and electrical properties, ZnO films were also prepared by rf sputtering at room temperature. The microstructure analyses by X-ray diffraction have shown that both of the ALD and sputtered ZnO thin films have (002) preferred orientation. At low growth temperature T_s ≤ 125 °C, ALD ZnO films have high resistivity (> 10 Ω cm) with small mobility (< 3 cm²/V s), while the ones prepared at higher temperature have lower resistivity (< 0.02 Ω cm) with higher mobility (> 15 cm²/V s). Meanwhile, sputtered ZnO films have much higher resistivity than ALD ZnO at most of the growth conditions studied. Based upon the experimental results, the electrical properties of ZnO thin films depending on the growth conditions for application as an active channel layer of TFT were discussed focusing on the comparisons between ALD and sputtering.     

A junctionless SONOS nonvolatile memory device constructed with in situ-doped polycrystalline silicon nanowires

ABSTRACT: In this paper, a silicon-oxide-nitride-silicon nonvolatile memory constructed on an n+-poly-Si nanowire [NW] structure featuring a junctionless [JL] configuration is presented. The JL structure is fulfilled by employing only one in situ heavily phosphorous-doped poly-Si layer to simultaneously serve as source/drain regions and NW channels, thus greatly simplifying the manufacturing process and alleviating the requirement of precise control of the doping profile. Owing to the higher carrier concentration in the channel, the developed JL NW device exhibits significantly enhanced programming speed and larger memory window than its counterpart with conventional undoped-NW-channel. Moreover, it also displays acceptable erase and data retention properties. Hence, the desirable memory characteristics along with the much simplified fabrication process make the JL NW memory structure a promising candidate for future system-on-panel and three-dimensional ultrahigh density memory applications.     

不同光刻胶作保护层对a-IGZO TFT性能的影响

采用脉冲直流溅射的方式沉积IGZO膜层作为底栅结构TFT的有源层,并在背沟道上涂覆不同类型的光刻胶作为保护层,探讨不同保护层对器件电学特性的影响。经考察发现:采用光刻胶作为保护层时,保护层制作后短期内可维持器件的电学特性基本不变;但涂胶后暴露在空气中一定时间后,器件的电学特性开始衰退,尤其是阈值电压变化较明显,器件工作模式由增强型变为耗尽型,并推断光刻胶中溶剂接触到背沟道中IGZO,其化学反应导致沟道中氧脱附,载流子浓度增加。实验还发现:使用SU-8负性光刻胶作为保护层的器件,其电学特性衰退较小,在空气中放置一段时间后表现最稳定。     

基于S3C2410并行RGB信号的TFT模组串行RGB应用

文章简述了ARM处理器S3C2410 TFT信号驱动的相关原理,着重讲述了在S3C2410平台上,使用并行24位RGBTFT信号进行串行8位RGBTFT接口模组驱动的实现。采用该设计的实物显示效果良好,具备较强实用性。     

用于设备控制的双核驱动智能彩屏

本智能彩屏终端系统采用双核控制的方式使用C语言进行软件编程,解决了目前工控领域如何快速、低成本地从单色STN/FSTN液晶屏升级到真彩色TFT液晶屏的问题。     

基于陷落电荷效应的非晶硅TFT的开态电流模型

对非晶硅薄膜晶体管,提出基于陷落电荷和自由电荷分析的新方法。考虑到带隙中指数分布的深能态和带尾态,给出了基于阈值电压的开启区电流模型。定义阈值电压为栅氧/半导体界面处陷落于深能级陷阱态的电荷与陷落于带尾态的电荷相等时所对应的栅压。电流模型中,引入一陷落电荷参数β,此参数建立了电子的带迁移率与有效迁移率之间的关系。最后,将电流模型同时与Pao-Sah模型和实验数据进行比较和验证,结果表现出很好的一致性。     

通过LCD洁净间气流改善提升良品率

在传统的洁净间气流管理管控的基础上,着重介绍了TFT LCD制造业用洁净室系统的特性,以及在TFT LCD制造行业普遍出现的重要异常气流问题,提供了针对性的有效气流改善实施方案,并确认了气流改善,产品良率改善的效果,提出了未来TFT LCD洁净间气流改善的主要发展方向。