机抖激光陀螺抖动机构的温度特性的研究

研究了机抖激光陀螺抖动偏频量与温度之间的关系。通过大量的重复性高低温实验,证明了抖动偏频量与温度的线性关系,并得到了拟合直线表达式。结果表明,抖动偏频量与温度具有较好的线性关系,而且具有较好的重复性。同时用抖动偏频量对陀螺的零漂进行补偿,提高了陀螺的精度。     

浅谈变频器供电条件下电动机的温升与对策

随着变频调速技术的蓬勃发展，变频器供电电机的温升问题已引起人们的广泛关注。本文首先讨论了电动机的温升限度；然后结合感应电机温升实验的相关数据分析了变频器供电对电动机温升的影响及其原因；最后从降低发热量和提高散热能力两方面提出缓解电机温升的措施，并指出了实际应用中应注意的问题。     

Behaviour of CPW and TFMS lines at high temperature for RF applications in sub-45 nm nodes

Coplanar waveguide (CPW) and thin film microstrip (TFMS) lines integrating porous ultra low-k as inter-metal dielectric layers (k = 2.5) and copper as metal, are for the first time experimentally measured up to 110 GHz and under different temperature conditions, up to 200 °C. The extracted attenuation and propagation coefficients of those transmission lines are compared to simulations performed with MAGWEL software, a frequency domain 3-D Maxwell solver. Based on the characterization results some guidelines related to interconnect design are presented for future applications.     

Temperature-adaptive voltage tuning for enhanced energy efficiency in ultra-low-voltage circuits

Circuits optimized for minimum energy consumption operate typically in the subthreshold regime with ultra-low power-supply voltages. Speed of a subthreshold logic circuit is enhanced with an increase in the die temperature. The excessive timing slack observed in the clock period of subthreshold logic circuits at elevated temperatures provides opportunities to lower the active-mode energy consumption. A temperature-adaptive dynamic-supply voltage-tuning technique is proposed in this paper to reduce the high-temperature energy consumption without degrading the clock frequency in ultra-low-voltage subthreshold logic circuits. Results indicate that the energy consumption can be lowered by up to 40% by dynamically scaling the supply voltage at elevated temperatures. An alternative technique based on temperature-adaptive reverse body bias to exponentially reduce the subthreshold leakage currents at elevated temperatures is also investigated. The active-mode energy consumption with two temperature-adaptive voltage-tuning techniques is compared. The impact of the process parameter and supply voltage variations on the proposed temperature-adaptive voltage scaling techniques is evaluated.     

无铅焊料十温区回流焊过程的仿真研究

通过对回流焊接工艺参数传输带速度、各个炉区温度设定和焊膏熔化温度曲线的关系研究,建立了大尺寸PCB组件传热过程的数学模型。基于ANSYS平台,模拟了无铅焊料PCB组件在十温区回流焊接过程中的温度场,从而确定了合适的焊接参数。     

基于Proteus的温湿度监测系统仿真实现

介绍了温湿度传感器SHT7x的工作原理、通信协议和使用方法,给出温湿度监测系统的程序流程.在Proteus仿真平台上以SHT7x和单片机为核心,为节约了输入输出口线,选择MAXIM公司的多功能串行LED显示驱动器MAX7219驱动8位LED显示器,实现了温湿度监测系统的设计,给出了仿真结果.这种仿真实现对于工业控制领域中的计算机控制系统的设计有很好的参考价值。     

Parameter variation aware hybrid TFET-CMOS based power gating technique with a temperature variation tolerant sleep mode

In this work, we discuss the origin and temperature dependence of various mechanisms behind the flow of leakage current in two topologies of TFET – basic TFET and pocket doped TFET. It is shown that the leakage current of pocket doped TFET shows relatively less variations with change in temperature when compared with MOSFET and basic TFET, and hence they can be deployed in low voltage temperature variation prone applications. But, this advantage of pocket-doped TFET is overshadowed by the huge sensitivity of its ON-state current towards variations in doping concentration at the tunnel junction. Hence, the fabrication of the TFET based circuits requires a negotiation with the yield and cost of the fabrication process. In order to mitigate this issue, we propose a hybrid TFET-CMOS based power gating technique. The hybrid technique utilizes a minimum number of TFETs to reduce the sleep mode leakage current, while enabling a temperature variation tolerant sleep mode at a supply voltage of 0.6 V.     

Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET

In this paper two types of Al/Ti-based Ohmic contacts to Gallium Nitride (GaN) based devices are presented; ImplantedN⁺GaN (like the ones found in the Source/Drain of GaN Metal Oxide Semiconductor Field Effect Transistors-MOSFET) and heterojunction (HJ) AlGaN/GaN contacts (Source/Drain of High Electron Mobility Transistors-HEMT). Sheet resistance (R_sh) and contact resistance (R_c) have been investigated in the temperature (T) range of 25-250 °C. It was found that the R_sh (850/700 Ω□) (25/250 °C) and R_c (2.2/0.7 Ωmm) decrease with T for ImplantedN⁺GaN contact and R_sh (400/850 Ω□) and R_c (0.2/0.4 Ωmm) (weakly for R_c) increase with T for HJAlGaN/GaN contact. Numerical computation based models are used to determine the theoretical R_sh and R_c behavior with T and to fit the experimental values.     

Al/Ni薄膜自蔓延反应连接温度场模拟及分析

自蔓延反应能在极短时间内产生足够集中的热量熔化钎料实现材料的连接,具有连接效率高、对连接母材热影响小等特点,从而在材料连接和电子封装领域有着广泛的应用前景。针对Cu/Cu和Cu/Si两种互连结构,建立Ai/Ni薄膜自蔓延反应的连接温度场有限元模型,分析不同钎料厚度、预热条件等参数以及不同连接材料对自蔓延反应连接温度场的影响规律。     

Temperature dependant flash memory erase transient simulation (Part I)

We present a detailed and accurate physics based transient simulation for modeling flash memory erasing at ambient and non-ambient temperatures. Typical cells are erased by moving electrons from the floating gate to the drain, source or substrate. Part I of this paper addresses substrate erase modeling using a simulation based on the solution to Poisson’s equation with temperature as an independent variable. The goal of this paper is to demonstrate the derivation of an accurate erase simulation and show the effects of temperature on the threshold voltage shift during the erase process. Several papers have been published on this topic but fail to present detailed derivations and none using this exact set of equations to model the temperature dependent erasing process.