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71.
M. S. FOUND M. QUARESIMIN 《Fatigue & Fracture of Engineering Materials & Structures》2003,26(1):17-26
A brief review of the models used to predict the cumulative fatigue damage in FRP composites is presented. Two‐stage fatigue loading of a [0/90,± 452,0/90]s quasi‐ isotropic woven carbon fibre/epoxy resin laminate was evaluated at stress ratio R = 0.05 and the failure mechanisms investigated using x‐radiography after each loading stage. The results are presented in terms of fatigue strength and damage growth and are compared with those in the literature. A low‐to‐high loading sequence is more damaging than a high‐to‐low one and the Palmgren‐Miner linear damage rule may no longer be valid for this kind of material, as previously reported. 相似文献
72.
This study focuses on numerical simulation of ductile failure in the Co binder phase of WC–Co hardmetal. The growth of edge cracks under mode I loading is considered. A computational micromechanics approach is taken where the Co binder ligaments are explicitly represented in finite element models. An embedding technique is employed. Crystal plasticity theory is used to represent plastic deformation in the Co ligaments. Crack propagation in the binder is simulated using an element removal technique based on a modified Rice and Tracey model for ductile void growth, and fracture resistance curves are generated. Parameter studies are performed for variations in microstructrual parameters such as numbers of Co ligaments ahead of the crack tip and local Co volume fraction. The importance of thermal residual stresses and finite element mesh density are also investigated. 相似文献
73.
硅表面上的纳米量子点的自组织生长 总被引:1,自引:1,他引:0
纳米半导体量子点以其所具有的新颖光电性质与输运特性正在受到人们普遍重视。作为制备高质量纳米量子点的工艺技术 ,自组织生长方法倍受材料物理学家的青睐。而如何制备尺寸大小与密度分布可控的纳米量子点更为人们所注目。因为这是关系到纳米量子点最终能否器件实用化的关键。文中以此为主线 ,着重介绍了各种 Si表面 ,如常规表面、氧化表面、台阶表面以及吸附表面上 ,不同纳米量子点的自组织生长及其形成机理 ,并展望了其未来发展前景 相似文献
74.
Evaluation of Slow Crack Growth Resistance in Ceramics for High-Temperature Applications 总被引:1,自引:0,他引:1
The slow (subcritical) crack growth (SCG) resistance of Si3 N4 and SiC ceramics has been evaluated by a stepwise loading test on bending bars precracked by Vickers indentation. Three highly refractory materials were selected for the evaluation: i.e., (1) high-purity Si3 N4 sintered by hot isostatic pressing (HIP) without additives and (2,3) α - and β - SiC pressureless sintered with B and C addition. Under the hypothesis of linear elastic behavior at high temperature, which was found satisfied in the present materials, the SCG resistance was expressed in terms of initial stress intensity factor critical for SCG failure within a predetermined lifetime. The present method was found useful in shortening the testing time and consistent with other traditional fatigue tests (e.g., static-fatigue test): It is recommended as a screening test for materials under research and development. Among the materials tested in the present study, the highest SCG resistance up to 1440°C was found in the high-purity Si3 N4 without additives. 相似文献
75.
The interaction between thin films of hydrogenated amorphous silicon and sputter-deposited chromium has been studied. Following
deposition of the chromium films at room temperature, the films were annealed over a range of times and temperatures below
350°C. It was found that an amorphous silicide was formed only a few nanometers thick with the square of thickness proportional
to the annealing time. The activation energy for the process was 0.55±0.05 eV. The formation process of the silicide was very
reproducible with the value of density derived from the thickness and Cr surface density being close to the value for crystalline
CrSi2 for all films formed at temperatures ≤300°C. The specific resistivity of the amorphous CrSi2 was ≈600 μΩ·cm and independent of annealing temperature. 相似文献
77.
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80.
大尺寸氟化铅晶体的生长 总被引:4,自引:1,他引:3
描述了不用高真空条件,在通常的Bridgman-Stockbarger炉中,用高温下的反应方法,消除了原料及生长炉内残存的O^2-及OH^-,生长出优质,大尺寸的β-PbF2晶体。在晶体生长时,出现的主要问题是在晶体中的针状结构及开裂,但可通过控制条件来解决。 相似文献