Correlations between the Optical Properties and the Microstructure of TiO_2 Thin Films Prepared by Reactive Electron-beam Evaporation

1　IntroductionInrecentyears ,theoreticalandexperimentalinvesti gationsonthetitaniumoxidefilmsareconductedonac countoftheirremarkableproperties .Titaniumdioxidefilmshaveattractedconsiderableattentiontoapplytomi croelectronicdevices ,opticalthin filmdevice…     

Structural and electrochemical properties of vanadium oxide thin films grown by d.c. and r.f. reactive sputtering at room temperature

Vanadium oxide thin films were grown at room temperature by direct current and radio-frequency reactive sputtering systems to compare the structural and electrochemical properties. Rutherford backscattering spectrometry and Fourier transform infrared measurements reveal that the composition of the as-deposited films consists of the V₂O₅ phase regardless of the deposition methods. Wide-angle X-ray diffraction measurements show that the crystallinity of the as-deposited V₂O₅ films is different depending on the deposition method. Films deposited by direct current reactive sputtering were amorphous, whereas films deposited by radio-frequency reactive sputtering were crystalline. Scanning electron microscopy measurements show that the V₂O₅ films grown by radio-frequency reactive sputtering had a large grain size but the films grown by direct current reactive sputtering were amorphous. Charge–discharge measurements taken at room temperature with a constant current clearly indicate that the films grown by direct current sputtering demonstrated typical amorphous behavior, whereas the V₂O₅ films grown by radio-frequency sputtering demonstrated the discharge behavior of crystalline V₂O₅. The origin of the structural and electrochemical properties of film grown by radio-frequency reactive sputtering is a self-bias effect. The self-bias effect induces ion bombardment during the growth of vanadium oxide thin film. These results suggest that direct current reactive sputtering is more desirable for growing amorphous V₂O₅ thin film than radio-frequency reactive sputtering.     

透视/遮阳/控温/红外隐身多功能集成序构薄膜研究

为了解决光学材料多功能耦合与集成的光谱诉求及其材料设计冲突难题,本文提出一种基于［TiAlN/Ag］²/TiAlN序构复合薄膜开展可见光透射诱导与红外辐射抑制的协同设计方法,诠释序构薄膜材料多功能耦合的新原理与新机制,并对其光学兼容性能测试表征。研究表明,构筑的［TiAlN（厚度30 nm）/Ag（厚度15 nm）］²/TiAlN（厚度30 nm）序构复合薄膜具备带通状选择性透射与中远红外低辐射的光学特性,可较好实现透视、遮阳、低辐射控温与红外隐身多功能兼容效果,在军用车辆、绿色建筑等特种玻璃的辐射控温与红外隐身领域有应用潜力。     

ZnO薄膜发光特性的研究进展

ZnO薄膜具有压电、光电、压敏、气敏、发光等多种特性,应用极为广泛。针对ZnO薄膜的发光特性,对ZnO薄膜的制备、影响其发光特性的因素及其发光机理的研究进展进行了综述。     

一种新型的激光—等离子体辅助化学气相沉积装置的研究

为探索用激光离子体共同辅助化学气相沉积过程以实现室温沉积的可能性，设计并制造了一种新型的ＣＶＤ装置，实际了ＳｉＨ４－ＮＨ３－Ｎ２体系制取Ｓｉ３Ｎ４膜的试验。结果表明，激光和等离子体是可以相互促进，共同辅助ＣＶＤ过程的，且两者均处于较代的能量水平。     

钢渗铬层上金刚石薄膜的表面、界面结构及附着性

在钢渗铬层表面用化学气相沉积(CVD))法制备了金刚石薄膜.使用扫描电镜(SEM)、透射电镜(TEM)和压痕法研究了金刚石膜的表面、界面结构及附着力.用拉曼光谱分析了金刚石膜的纯度及非金刚石碳相.甲烷含量超过0.6%(体积分数)后,金刚石膜为球形纳米晶,形核密度＞107cm-2.用甲烷含量为0.6%(体积分数)沉积的金刚石膜表面的残余压应力为1.22 Gpa,而膜背面的残余压应力更高,达2.61 Gpa.压痕显示在19.6 N载荷下膜发生开裂.TEM观察发现,膜/基界面为微观非平面,有利于提高金刚石膜的附着力.     

圆柱谐振腔式MPCVD装置中氢、氩微波等离子体分布规律的数值模拟

在使用简化的等离子体放电模型的基础上,模拟了圆柱谐振腔式微波等离子体沉积室中,不同金刚石膜生长条件下微波等离子体的分布状态。在模拟中,针对纳米金刚石的生长环境,就纯氩气反应气体中,不同的输入功率、不同气体压力条件下,沉积室中形成的等离子体分布的变化规律进行了模拟,将其与一般氢气气氛下的相应模拟结果相对比。模拟所获得的结果,对微波等离子体方法沉积金刚石膜的操作环境的优化,有着一定的指导意义。     

PS-b-PNIPAAm嵌段共聚物多孔薄膜的制备及形貌研究

将两亲性PS-b-PNIPAAm嵌段共聚物(BCP)溶解在四氢呋喃中配制成浓度为2%(质量分数)的溶液,旋涂后得到初生嵌段共聚物薄膜,以乙醇为退火溶剂退火后,探讨了退火时间对薄膜微孔结构的影响,结果表明,随着退火时间的延长,膜表面的微相分离越明显,微孔结构的分布更均匀。进一步将在乙醇中退火预处理的薄膜分别在乙醇或去离子水中进行溶胀处理,通过选择性溶胀成孔法制备PS-bPNIPAAm纳米多孔膜。研究了溶胀时间、温度及溶剂类型对薄膜形貌的影响,结果发现升高溶胀温度和延长溶胀时间均有助于膜表面微孔结构的形成,且该过程中乙醇的成孔作用比水的作用更为明显。     

金刚石的同质外延掺硼和Schottky特性

在＜１００＞取向的金刚石衬底上，用微波ＰＣＶＤ法进行同质外延，掺杂和Ｓｃｈｏｔｔｙ特性的实验研究，总结了反应气体，碳源浓度等因素对外延层形貌、结构的影响，Ｂ／Ｃ比对掺硼外延层结构、形貌和电学性能的影响，以及接触金属，温度对Ｓｃｈｏｔｔｋｙ特性的影响。     

纳米晶薄膜Li_xPb_(0.9-x)La_(0.1)TiO_3合成及离子电导特性

纳米晶薄膜LixPb0.9-xLa0.1TiO3（x=0，0．1，0．2，0．6）以普通玻璃为衬底通过溶胶—凝胶方法烧结制备而成。对LPLT薄膜进行DTA，XRD等测试手段分析。通过交流阻抗数据的分析，在室温下电导率高达2．3×10－3S·cm-1