Solution‐Processed Small‐Molecule Bulk Heterojunction Ambipolar Transistors

Solution‐processed small‐molecule bulk heterojunction (BHJ) ambipolar organic thin‐film transistors are fabricated based on a combination of [2‐phenylbenzo[d,d']thieno[3,2‐b;4,5‐b']dithiophene (P‐BTDT) : 2‐(4‐n‐octylphenyl)benzo[d,d ']thieno[3,2‐b;4,5‐b']dithiophene (OP‐BTDT)] and C₆₀. Treating high electrical performance vacuum‐deposited P‐BTDT organic semiconductors with a newly developed solution‐processed organic semiconductor material, OP‐BTDT, in an optimized ratio yields a solution‐processed p‐channel organic semiconductor blend with carrier mobility as high as 0.65 cm² V^?1 s^?1. An optimized blending of P‐BTDT:OP‐BTDT with the n‐channel semiconductor, C₆₀, results in a BHJ ambipolar transistor with balanced carrier mobilities for holes and electrons of 0.03 and 0.02 cm² V^?1 s^?1, respectively. Furthermore, a complementary‐like inverter composed of two ambipolar thin‐film transistors is demonstrated, which achieves a gain of 115.     

台达BW系列变频器在电池极片轧辊机收放卷上的应用

本文主要介绍台达BW系列变频器在电池机片轧辊机收放卷上的应用,利用台达BW系列变频器特有的收放卷功能,达到在金属物料在收放卷的恒张力控制。     

High Mobility and Luminescent Efficiency in Organic Single‐Crystal Light‐Emitting Transistors

A high‐performance ambipolar light‐emitting transistor (LET) that has high hole and electron mobilities and excellent luminescence characteristics is described. By using this device, a conspicuous light‐confined edge emission and current‐density‐dependent spectral evolution are observed. These findings will result in broader utilization of device potential and they provide a promising route for realizing electrically driven organic lasers.     

两级式单相逆变器输入电流低频纹波分析及抑制

50Hz单相逆变器时变特性导致前级直直变换器输入电流中含两倍频100 Hz低频纹波,将有可能诱发变换器之间相互作用问题,如稳定性问题、输入纹波电流限制等。基于反向电流增益Ai(s)(输入电流对输出电流)模型,提出一种新的方法,用于分析直直变换器低频纹波特性。建立不同控制方式下的Ai(s)模型,并通过SABER软件仿真得到验证。指出并验证平均电流控制方式相比电压控制方式及开环控方式,在输入电流低频纹波抑制方面更有效,并基于Ai(s)模型给出相关的设计准则。最终给出不同控制策略下输入电流低频纹波仿真及实验作为验证。     

Low voltage low power fully differential self‐biased 1.5‐bit quantizer with built‐in thresholds

A new fully differential self‐biased 1.5‐bit flash quantizer with built‐in threshold voltages, suitable for high speed ADCs and low voltage operation, is described. The proposed circuit is very simple, and simulation results in a 65 nm standard CMOS technology demonstrate that, following the suggested design methodology, it is able to achieve low offset, low kickback noise, low metastability probability errors and fast regeneration time with very low power dissipation. Copyright © 2011 John Wiley & Sons, Ltd.     

Dynamic modeling of DC–DC converters with peak current control in double‐stage photovoltaic grid‐connected inverters

In photovoltaic (PV) double‐stage grid‐connected inverters a high‐frequency DC–DC isolation and voltage step‐up stage is commonly used between the panel and the grid‐connected inverter. This paper is focused on the modeling and control design of DC–DC converters with Peak Current mode Control (PCC) and an external control loop of the PV panel voltage, which works following a voltage reference provided by a maximum power point tracking (MPPT) algorithm. In the proposed overall control structure the output voltage of the DC–DC converter is regulated by the grid‐connected inverter. Therefore, the inverter may be considered as a constant voltage load for the development of the small‐signal model of the DC–DC converter, whereas the PV panel is considered as a negative resistance. The sensitivity of the control loops to variations of the power extracted from the PV panel and of its voltage is studied. The theoretical analysis is corroborated by frequency response measurements on a 230 W experimental inverter working from a single PV panel. The inverter is based on a Flyback DC–DC converter operating in discontinuous conduction mode (DCM) followed by a PWM full‐bridge single‐phase inverter. The time response of the whole system (DC–DC + inverter) is also shown to validate the concept. Copyright © 2011 John Wiley & Sons, Ltd.     

开关损耗优化的级联型逆变器全区域空间矢量调制策略

利用错时采样技术将级联型逆变器的多电平空间矢量脉宽调制(SVPWM)简化为逆变器各层采样点相互错开,每个采样点仅需控制某层3个功率单元的分解三电平SVPWM调制;通过分析功率单元H桥电路的内在关系,本文从三电平短矢量的6种冗余开关形式中选出一种开关损耗最优的开关动作序列;推导出逆变器正常运行状况下的线性调制策略,以及故障运行状况下维持输出基波电压不变的三电平过调制策略;最后利用傅里叶级数推算出线性调制和过调制区域内输出基波和谐波电压幅值的计算公式。通过样机实验表明,本文提出的调制策略在保证开关损耗最优的前提下,不仅可以应用于线性调制区域,而且也可以应用于过调制区域,同时两个区域内都能保证基波电压的幅值随调制比成线性输出关系。在功率单元直流电压下降或部分功率单元故障旁路时,使用过调制策略可以使系统从线性工作状态平稳过渡到六阶梯波状态,直至六阶梯波时输出最大值;同时,相应过调制算法易于软件实现,是一种适用于级联型逆变器的全区域调制方法。     

多电平逆变器分析与仿真

目前,多电平逆变器常采用电力电子开关器件串联的逆变器,或者功率单元串联叠加的级联式逆变器。两者不仅直流供电电源不同,电路的结构形式也不同。新型级联多电平逆变器不仅结构简单,而且在输出电平数相同时,所需开关管较少,具有良好的工业应用前景。通过分析典型逆变器结构,阐述其结构特点与联系,并通过软件仿真,比较各自的优缺点,为高电压大容量多电平逆变器的选择提供有益的参考。     

多功能并网逆变器研究综述

多功能并网逆变器不但能完成常规并网逆变器实现可再生能源并网的基本功能,而且还复合了治理电能质量问题的功能,可以显著提高并网逆变器的性能价格比、降低系统的体积和成本,尤其适合于微电网和分布式发电系统应用。针对多功能并网逆变器的拓扑进行了综述。从单相和三相系统的角度阐释了多种多功能并网逆变器拓扑,并从系统参数、容量、开关频率、复合功能和应用场合等方面对各拓扑进行了比较和评价,并认为新型电力电子拓扑、先进控制策略、软开关技术、大功率应用以及电力电子集成系统中的稳定性等将会是多功能并网逆变器未来可能的研究方向。