浅论太阳电池在通信工程中的应用

介绍了太阳电池应用的一般要求和太阳能供电系统的组成及运行，给出了工程设计个常用的太阳电池容量计算方法，并提出太阳能供电系统运行维护注意事项。     

Diffusion and influence of Cu on properties of CdTe thin films and CdTe/CdS cells

The effective diffusion coefficients of Cu for thermal and photodiffusion in the CdTe films have been estimated from resistivity versus duration of thermal or photoannealing curves. In the temperature range 60–200°C the effective coefficient of thermal diffusion (D_t) and photodiffusion (D_ph) are described as D_t=7.3×10⁻⁷exp(−0.33/kT) and D_ph=4.7×10⁻⁸exp(−0.20/kT).It is found that the diffusion doping of CdTe thin films by Cu at 400°C results in a sharp decrease of resistivity up to 7 orders of magnitude of p-type material, depending on thickness of Cu film. The comparative study of performance of CdTe(Cu)/CdS and CdTe/CdS cells has been studied. It is shown that the diffusion doping of CdTe film by Cu increases efficiency of CdTe(Cu)/CdS cells from 0.9% to 6.8%. The degradation of photovoltaic parameters of CdTe(Cu)/CdS cell, during testing under forward and reverse bias at room temperature, proceeds at a larger rate than those of CdTe/CdS cell without Cu. The degradation of performance of CdTe(Cu)/CdS cells is tentatively assigned to electrodiffusion of Cu in CdTe, resulting in redistribution of concentration of Cu-related centers in CdTe film and heterojunction region.     

液晶分子附着能和盒间隙对响应时间的影响

通过理论分析和实验研究液晶分子附着能和液晶盒间隙对响应时间(τ0)的影响。用液晶盒有效间隙法和表面动力学方程法两种方法推出分析公式,由这两种方法推出的结果是一致的。实验数据与简化方程τ0-dx基本拟合(其中d是液晶盒的间隙,x是指数)。在两种极端的(极大或极小)附着能极限下,指数x分别接近2和1。这个结论有助于优化液晶显示器件的应用。     

FEM model of the ohmic resistance of IP-SOFCs

In the present work, the ohmic resistance of an integrated planar-SOFC (IP-SOFC) has been evaluated by developing a model whose equations have been solved numerically through an FEM method. The model allows to estimate the distribution of voltage and current density in the cell. A comparison between simulated and experimental data of area specific resistance is reported, which shows satisfactory agreement. The mathematical model has also been used to carry out some parametric studies for optimisation purposes. Indeed, a reduction in cell pitch length and an increase in electrode thickness are predicted to lead to a reduction in ohmic losses in IP-SOFCs.     

Neutral fitness landscapes in signalling networks

Biological and technological systems process information by means of cascades of signals. Be they interacting genes, spiking neurons or electronic transistors, information travels across these systems, producing, for each set of external conditions, an appropriate response. In technology, circuits performing specific complex tasks are designed by humans. In biology, however, design has to be ruled out, confronting us with the question of how these systems could have arisen by accumulation of small changes. The key factor is the genotype-phenotype map. With the exception of RNA folding, not much is known about the exact nature of this mapping. Here, we show that structure of the genotype-phenotype map of simple feed-forward circuits is very close to the ones found in RNA; they have a large degree of neutrality, by which a circuit can be completely rewired keeping its input-output function intact, and there is a relatively small neighbourhood of a given circuit containing almost all the phenotypes.     

Heavy arsenic doping of silicon grown by atmospheric pressure selective epitaxial chemical vapor deposition

Selective epitaxial Si with a high arsenic concentration of 2.2×10¹⁹ atoms/cm³ was deposited at a high growth rate of 3.3 nm/min under atmospheric pressure. It was confirmed that this method had excellent selectivity and produced films having good crystalline quality, abrupt dopant profiles at the interfaces, and smooth surfaces. The growth mechanism is discussed in terms of the relationship between the effects of arsenic surface segregation and etching by hydrogen chloride.     

Effect of 8 MeV electron irradiation on electrical properties of CuInSe2 thin films

Radiation damages due to 8 MeV electron irradiation in electrical properties of CuInSe₂ thin films have been investigated. The n-type CuInSe₂ films in which the carrier concentration was about 3×10¹⁶ cm⁻³, were epitaxially grown on a GaAs(0 0 1) substrate by RF diode sputtering. No significant change in the electrical properties was observed under the electron fluence <3×10¹⁶ e cm⁻². As the electron fluence exceeded 10¹⁷ e cm⁻², both the carrier concentration and Hall mobility slightly decreased. The carrier removal rate was estimated to be about 0.8 cm⁻¹, which is slightly lower than that of III–V compound materials.     

Accelerator Analysis of Tributyltin Adsorbed onto the Surface of a Tributyltin Resistant Marine Pseudoalteromonas sp. Cell

Tributyltin (TBT) released into seawater from ship hulls is a stable marine pollutant and obviously remains in marine environments. We isolated a TBT resistant marine Pseudoalteromonas sp. TBT1 from sediment of a ship’s ballast water. The isolate (10^{9.3 ± 0.2} colony-forming units mL⁻¹) adsorbed TBT in proportion to the concentrations of TBTCl externally added up to 3 mM, where the number of TBT adsorbed by a single cell was estimated to be 10^8.2. The value was reduced to about one-fifth when the lysozyme-treated cells were used. The surface of ethanol treated cells became rough, but the capacity of TBT adsorption was the same as that for native cells. These results indicate that the function of the cell surface, rather than that structure, plays an important role to the adsorption of TBT. The adsorption state of TBT seems to be multi-layer when the number of more than 10^6.8 TBT molecules is adsorbed by a single cell.     

Numerical characterization of a microscale solid-oxide fuel cell

In this study, a single unit of planar micro-solid-oxide fuel cell (μSOFC) is investigated numerically to evaluate the influences of flow channel design, oxygen composition, and thermal operating conditions on cell performance. Four flow channel designs are examined under the co-flow configuration: serpentine, double serpentine, rod bundle, and oblique rib. For all designs, the contacts areas of interconnect to electrodes are kept consistent to maintain the ohmic losses at the same level. To characterize the mass transport effects, there are three different compositions, 100% O₂, 50% O₂/50% N₂ and air, fed to the cathode inlet. Different thermal conditions, adiabatic and isothermal, are applied to the outer boundary of the μSOFC and the results are compared. The outcomes suggest that both thermal conditions and oxidant composition show remarkable influences on μSOFC performance. Under adiabatic conditions, the rise of cell temperature causes a decrease in reversible voltage, deteriorating the overall cell competence. When oxygen is diluted with nitrogen, local gas diffusion becomes dominant to the cathode reaction. Bulk flow, on the other hand, plays a minor role in cell performance since there is little deviation in the polarization curves for all flow channel designs, even at high current densities. For comparison, the flow visualization technique is employed to observe the transport phenomena in various flow channel designs. The flow patterns are found to resemble the concentration distribution, providing a useful tool to design μSOFCs.     

Performance of a Yeast-mediated Biological Fuel Cell

Saccharomyces cerevisiae present in common Baker’s yeast was used in a microbial fuel cell in which glucose was the carbon source. Methylene blue was used as the electronophore in the anode compartment, while potassium ferricyanide and methylene blue were tested as electron acceptors in the cathode compartment. Microbes in a mediator-free environment were used as the control. The experiment was performed in both open and closed circuit configurations under different loads ranging from 100 kΩ to 400Ω. The eukaryotic S. cerevisiae-based fuel cell showed improved performance when methylene blue and ferricyanide were used as electron mediators, rendering a maximum power generation of 146.71±7.7 mW/m³. The fuel cell generated a maximum open circuit voltage of 383.6±1.5 mV and recorded a maximum efficiency of 28±1.8 % under 100 kΩ of external load.