Efficient red phosphorescent organic light emitting diodes based on solution processed all-inorganic cesium lead halide perovskite as hole transporting layer

An efficient red phosphorescent organic light emitting diode (PhOLED) has been realized by utilizing a composite hole transporting layer comprised of all-inorganic cesium lead halide perovskite CsPbBr₃ via spin-coating and 1,3-bis(9-carbazolyl) benzene (mCP) by vacuum depositing, in which CsPbBr₃ film is used as a hole transporting layer and mCP plays a dominant role in electron and exciton blocking. And this PhOLED shows a saturated red emission coordinated at CIE (0.65, 0.33) driven at 7.5 V, a maximum brightness of 20,750 cd/m², and a maximum current efficiency of 10.64 cd/A, which is as 1.87 times as that 5.68 cd/A of the reference PhOLEDs based on traditional small organic molecular hole transporting material N,N′-bis(naphthalen-1-yl)-N,N′-bis(phenyl)-benzi (NPB). The electroluminescent (EL) spectra and the energy level alignment of different PhOLEDs are investigated. The enhanced EL performances are ascribed to improved hole injecting and transporting behaviors, and better electron and exciton confinements by introducing the composite hole transporting layer CsPbBr₃/mCP.     

High Optical Gain of Solution-Processed Mixed-Cation CsPbBr3 Thin Films towards Enhanced Amplified Spontaneous Emission

A solution-processed thin film made of all-inorganic CsPbBr₃ perovskite is a promising candidate for low-cost and flexible green-color lasers. However, the amplified spontaneous emission (ASE) of solution-processed CsPbBr₃ films still experiences a high threshold owing to poor morphology and insufficient optical gain. Here, a multiple-cation doping strategy is demonstrated to develop compact, smooth thin films of Cs_0.87(FAMA)_0.13PbBr₃/(NMA)₂PbBr₄ (FA: formamidinium; MA: methylammonium; NMA: naphthylmethylammonium) with a record high net modal optical gain of ≈ 3030 cm⁻¹ and low propagation loss of 1.0 cm⁻¹. The FA and MA cations improve the crystallization kinetics to form continuous films, and the NMA cations reduce the grain dimension, increase film dispersibility/uniformity, and enhance spatial confinement to promote optical gain. Room-temperature ASE is demonstrated under a low threshold of ≈ 3.8  µ J cm⁻² without degradation after four months of storage in glove box or excitation by 3 × 10⁷ laser pulses. These findings provide insights into enhancing the optical gain and lowering the threshold of perovskite lasers in terms of molecular synthesis and microstructure engineering.     

Benzodithiophene Hole‐Transporting Materials for Efficient Tin‐Based Perovskite Solar Cells

Developing efficient interfacial hole transporting materials (HTMs) is crucial for achieving high‐performance Pb‐free Sn‐based halide perovskite solar cells (PSCs). Here, a new series of benzodithiophene (BDT)‐based organic small molecules containing tetra‐ and di‐triphenyl amine donors prepared via a straightforward and scalable synthetic route is reported. The thermal, optical, and electrochemical properties of two BDT‐based molecules are shown to be structurally and energetically suitable to serve as HTMs for Sn‐based PSCs. It is reported here that ethylenediammonium/formamidinium tin iodide solar cells using BDT‐based HTMs deliver a champion power conversion efficiency up to 7.59%, outperforming analogous reference solar cells using traditional and expensive HTMs. Thus, these BDT‐based molecules are promising candidates as HTMs for the fabrication of high‐performance Sn‐based PSCs.     

无铅时代的来临

介绍了铅的危害与焊接中的问题,希望能给一些同业者带来帮助。     

氩缓冲气体对铯原子共振滤光器特性的影响

铯原子共振滤光器(Cs-ARF)是目前实现蓝绿激光水下通讯的一种关键元件。本文详细研究了不同气压氩缓冲气体对Cs-ARF特性的影响,明显改善了Cs-ARF的响应速率和辐射转换效率。还研究了氮气及不同器件结构对Cs-ARF特性的影响。     

A polyfluoroalkyl imidazolium ionic liquid as iodide ion source in dye sensitized solar cells

We report on the use of a fluorinated imidazolium ionic liquid as a source of iodide ions in solvent-based electrolytes for DSSCs. Efficient dye regeneration and fast charge transport in the fluorinated electrolyte result in an overall improvement of the device performances compared to conventional hydrogenated ionic liquids.     

提高天线丝杠传动速度的热应力分析

传动链末级采用丝杠传动的天线转速较低。为了最终提高天线转速,针对传统的结构计算的欠缺,提出了一种基于有限元热-结构耦合分析的设计方法。该方法利用动力学分析功能,结合传热学原理求解热流传递数值;通过引入数值结果的热-结构耦合分析,得到速度与应力的对应关系。通过动力学分析、热分析和静力分析的有机结合,对该类型结构计算进行了有益补充。结合工程案例示范,展示了该方法的应用前景。     

机械力化学法制备Pb(Sc0.5Ta0.5)O3弛豫铁电陶瓷微粉

用机械力化学法合成了单相Pb(Sc0.5Ta0.5)O3（R）弛豫铁电陶瓷微粉，并对球磨5h得到的陶瓷粉体和未经球磨的原料进行了热处理研究，实验结果表明，单相Pb(Sc0.5Ta0.5)O3可在球磨7h得到，TEM图像显示，晶粒尺寸为30－40mm，与根据Scheerer公式计算的结果吻合，5h粉体的热处理结果显示，焦绿矿相并未因球磨过程而在煅烧中不出现，原 粉体的热处理结果也显示出焦绿矿在1350℃温度下煅烧4h，仍有少量存在，比较实验的结果表明，在制备Pb(Sc0.5Ta0.5)O3的过程中，初始原料必须经过充分球磨才可实现单相目标产物的合成。     

Impression creep characterization of 90Pb-10Sn microelectronic solder balls at subsolvus and supersolvus temperatures

The creep behavior of Pb-10wt.%Sn, a common high-lead solder used in microelectronic packaging, was studied by impression creep testing of ball-gridarray (BGA) solder balls attached to an organic substrate, both above and below the solvus temperature (408 K). Below the solvus temperature, the solder microstructure consists of roughly equiaxed grains of the Pb-rich solid solution α, which contains <5wt.%Sn in solution, with a coarse dispersion of Sn-rich β precipitates. Here, the creep behavior of the solder is controlled by dislocation climb via dislocation core diffusion, yielding n≈4 and Q≈60 kJ/mole. Above the solvus temperature, where the entire 10wt.%Sn is in solution, the creep mechanism becomes controlled by viscous glide of dislocations, limited by solute drag, with n≈3 and Q≈92 kJ/mole. Based on experimental data, creep equations for the as-reflowed solder in the two temperature regimes are given. Comparison of the present data with those available in the literature showed good agreement with the proposed laws.     

电化学还原法制备氧化铅纳米棒

用电化学还原法制备出氧化铅纳米棒，用SEM、TEM、EDS和XRD研究其微观形貌和晶体结构。实验过程中发现电流密度是影响氧化铅纳米棒生成质量的主要因素。研究结果表明，用电化学还原法制备氧化铅纳米棒的最佳电流密度是30mA/cm^2，所制备的氧化铅纳米棒是单晶结构。