Effects of post annealing on removal of defect states in silicon oxynitride films grown by oxidation of silicon substrates nitrided in inductively coupled nitrogen plasma

Ultra thin (5 nm) silicon oxynitride (SiON) films were fabricated at a low temperature using nitrogen plasma generated by an inductively coupled plasma system. Effects of post-metalization annealing (PMA) of Al/SiON/Si MOS structure on the electrical properties of the SiON films were studied and correlations between the charge trapping states and the leakage current were established. Positive charge trapping by interface states generated by plasma damage was characterized by the hysteresis in high-frequency capacitance-voltage (C-V) characteristics. Hysteresis was observed to be completely removed by PMA while interface state density at the Si mid band gap reduced from 2.2×10¹³ to 3.7×10¹¹/eV/cm² and the oxide fixed charge density changed from 3.3×10¹² to −4×10¹¹/cm². The leakage current also decreased significantly, by more than two orders of magnitude, with PMA. The analysis of the leakage current using trap assisted tunneling (TAT) mechanism indicated that with PMA, the trap energy level in the SiON film becomes shallower from 1.3 to 0.7 eV. The positive trapped charges were observed to be annihilated by PMA and the trapping sites became neutral trap centers in the SiON film. This could lead to the reduction in the leakage current component given rise to by TAT.     

Preparation and properties of nano-sized SnO2 powder

1　INTRODUCTIONSnO2isoneofthemainmaterialsusedingassensor.Becauseofthehumidityandgassensingfunction,itattractsmoreandmoreattentions.Butthepresentproblemishowtoimprovethestabilityandsensibilityofgassensor.Researchershavetakenmanymeasurestoresolvethisproble…     

Investigation into polishing process of CVD diamond films

A new technique used for polishing chemical vapor deposition (CVD) diamond films has been investigated, by which rough polishing of the CVD diamond films can be achieved efficiently. A CVD diamond film is coated with a thin layer of electrically conductive material in advance, and then electro-discharge machining (EDM) is used to machine the coated surface. As a result, peaks on the surface of the diamond film are removed rapidly. During machining, graphitization of diamond enables the EDM process to continue. The single pulse discharge shows that the material of the coated layer evidently affects removal behavior of the CVD diamond films. Compared with the machining of ordinary metal materials, the process of EDM CVD diamond films possesses a quite different characteristic. The removal mechanism of the CVD diamond films is discussed.     

采用纯化学物质校准仪器测定钛合金中碳量

采用纯化学物质对高频加热－红外检测碳硫仪校准，对钛合金中的碳量进行测定。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

碳纳米管(CNT)场发射显示器的关键技术的研究

对碳纳米管阴极的制备以及场发射显示器的真空封装技术进行了研究.利用一种新的碳纳米管生长工艺制备出了具有优良场发射性能的碳纳米管阴极.并将这种直接生长的碳纳米管薄膜作为阴极,结合一种弹性封装工艺,开发了一种具有简单字符显示功能的场发射显示器.该显示器在较低的工作电压下就可获得高亮度的显示效果,并且器件的亮度与驱动电压成较好的线性关系,这将有利于未来的碳纳米管场发射显示器实现高亮度和多级灰度显示.器件的持续工作寿命测试已经超过5500小时,充分验证了碳纳米管作为场发射阴极的应用潜力.     

有机化合物中碳原子化学环境的分类

进行碳－１３ＮＭＲ波谱模拟的一种常用方法为线性回归，其数学模型则由已知结构所测得的化学位来建立。显然，每一数学模型仅可用于某种相似的化学环境。因此，为了进行化学环境的分类，本文提出权重层次位图法和分子连接性指数法两种方法以进行一些参数的计算，同时采用多元分析手段，如主成分分析和聚类分析，以进行多维空间数据点的显示，所得结果比较满意，从而可为碳－１３波谱模拟中回归方程的选择提供理论依据。     

Processing and microstructure of non-oxide ceramic fibres

Research and development efforts on high-temperature, oxidation-resistant fibres have increased over the past decade due to the demand for light-weight, stiff and strong composite materials in aerospace applications. Varieties of ‘high-performance’, continuous, non-oxide fibres with low-density, high tensile strength and tensile modulus have been developed either from organic precursors or via chemical vapour deposition for fabrication of ceramic matrix composites. Fibres derived from polymer precursors (e.g. Nicalon, Tyranno, HPZ) are small in diameter (compared to CVD monofilaments) and are ideally suited for ceramic composites. Processing, microstructural stability and mechanical properties of these newly developed SiC and Si₃N₄ base fibres are briefly reviewed in this paper.     

超细Fe3O4粒子表面包覆酞菁钴性质研究

本文研究了合成载氧体的金属有机化学液相淀积法制造工艺，所得产物经ＴＥＭ、ＸＰＳ、Ｍｏｓｓ－ｂａｕｅｒ谱和Ｂ－Ｈ仪等手段，研究了它的结构和磁性能。实验表明，酞青钴以薄层形式包覆在Ｆｅ＿３Ｏ＿４的表面，封闭了Ｆｅ＿３Ｏ＿４的表面孔洞，稳定了Ｆｅ＿３Ｏ＿４的物相，增强了磁性能。     

故县大坝坝基泥化性F_5断层的化学灌浆防渗加固处理

泥化软化性F_5断层是故县大坝坝基范围内最大的一条断层,位于左岸,对左坝肩的稳定极为不利,采用水泥灌浆处理无效,故改用化学灌浆处理。选用EAA化学浆材,采用“优选组合配方综合施灌”的创新施工工艺,效果良好,为今后低渗透性复杂的泥化软化性断层的防渗加固处理,提供了新的依据和途径。