Influence of ZnO buffer layer thickness on the electrical and optical properties of indium zinc oxide thin films deposited on PET substrates

The influence of the ZnO buffer layer thickness on the electrical and optical properties of In₂O₃–10 wt.% ZnO and ZnO bilayers deposited on polyethylene terephthalate (PET) substrates by RF magnetron sputtering were investigated. The optimum ZnO buffer layer thickness was found to be 90 nm which gives the lowest electrical resistivity of the bilayer of IZO and ZnO deposited on the PET substrate. The surface roughness decreases and diffusion of moisture and gas is more efficiently restrained, which contributes to lower the resistivity of the bilayer as the ZnO buffer layer thickness is increased. On the other hand, the total resistivity of the bilayer increases as the ZnO buffer layer thickness is increased because the resistivity of ZnO is higher than that of IZO. Introduction of a ZnO buffer layer does not nearly affect the IZO/ZnO/PET sample.     

In situ FTIR spectroelectrochemistry of poly[2-(3-thienyl)ethyl acetate] and its hydrolyzed derivatives

Poly[2-(3-thienyl)ethyl acetate] (PTEtAc) was chemically synthesized and transformed to partially hydrolyzed PTEtAc (PTEtAcOH) and poly[2-(3-thienyl)ethanol] (PTEtOH). The influence of the acetoxy and hydroxyl terminal functionalities in the side groups on the electrochemical properties of these polyalkylthiophenes was studied by cyclic voltammetry and in situ FTIR spectroelectrochemistry. The cyclic voltammograms point to a chemically reversible behaviour of the p-doping process for PTEtAc and PTEtAcOH, while for PTEtOH the redox activity of the polymer film is lost during consecutive potential scans.The attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) was used to investigate the p-doping of the three different type of thiophene polymer films. In situ FTIR spectra taken at different electrode potentials in a cyclovoltammetric scan display the doping induced changes of the polymer pattern. Important differences in the behaviour of the polymers were observed and interpreted in terms of different film structures.     

储罐内壁防静电防腐蚀涂料应用原理

概括介绍防静电涂料的功能,分类和石油产品储罐对防静电涂料的特别要求,分析防静电漆层结构中,导电填料的电极电位和榉层抗渗透性及干膜厚度。对罐壁防锈寿命的影响;介绍国内外不同结构类型的储罐如何选择不同涂料的通用原则,提出油罐内壁防静电涂料的配套原则。     

Effects of deposition temperature on characteristics of Ga-doped ZnO film prepared by highly efficient cylindrical rotating magnetron sputtering for organic solar cells

We report the characteristics of Ga-doped zinc oxide (GZO) films prepared by a highly efficient cylindrical rotating magnetron sputtering (CRMS) system as a function of substrate temperature for use as a transparent conducting electrode in bulk hetero-junction organic solar cells (OSCs). Using a rotating cylindrical GZO target, low sheet resistance (∼11.67 Ω/square) and highly transparent (90%) GZO films were deposited with high usage (∼80%) of the cylindrical GZO target. High usage of the cylindrical GZO target in the CRMS system indicates that CRMS is a promising deposition technique to prepare cost-efficient GZO electrodes for low cost OSCs. Resistivity and optical transmittance of the CRMS-grown GZO film were mainly affected by substrate temperature because the grain size and activation of the Ga dopant were critically dependent on the substrate temperature. In addition, the performance of OSC fabricated on GZO electrode sputtered at 230 °C (11.67 Ω/square) is better than OSC fabricated on as-deposited GZO electrode (29.20 Ω/square). OSCs fabricated on the GZO electrode sputtered at 230 °C showed an open circuit voltage of 0.558 V, short circuit current of 8.987 m A/cm², fill factor of 0.628 and power conversion efficiency of 3.149%.     

太阳电池用共掺杂ZnO透明导电薄膜的结构及性能

采用直流磁控溅射法在室温条件下制备出Al,Zr共掺杂ZnO透明导电薄膜.用XRD和SEM分析和观察了薄膜的组织结构和表面形貌,着重分析了靶基距对薄膜结构和光电性能的影响.研究结果表明,制备的Al,Zr共掺杂ZnO透明导电薄膜为具有C轴择优取向、六角纤锌矿结构的多晶薄膜.靶基距对Al,Zr共掺杂Zn0透明导电薄膜的结构和...     

A high performance direct ammonia fuel cell using a mixed ionic and electronic conducting anode

A high performance direct ammonia fuel cell incorporating a doubly doped barium cerate electrolyte and a novel cermet anode consisting of europium doped barium cerate, a mixed ionic and electronic solid electrolyte, and Ni was studied. The catalytic activity of the cermet anodes was superior to that of Pt catalysts. The I–V and power density data suggest that the direct ammonia fuel cell could be operated at temperatures as low as 450 °C. The fuel cell was operated with ammonia as fuel in excess of 500 h without significant deterioration in performance.     

New inorganic–organic proton conducting membranes based on Nafion and [(ZrO2)·(SiO2)0.67] nanoparticles: Synthesis vibrational studies and conductivity

In this report is described the preparation of six nanocomposite membranes of formula {Nafion/_[(ZrO_2)⋅(SiO_2)0.67]ΨZrO₂}$\{\text{Nafion}/{[(\text{Zr}{\text{O}}_2)\cdot {(\text{Si}{\text{O}}_2)}_{0.67}]}_{{\Psi }_{\text{Zr}{\text{O}}_2}}\}$ with ΨZrO₂${\Psi }_{\text{Zr}{\text{O}}_2}$ ranging from 0 to 1.79 based on Nafion^® and [(ZrO₂)·(SiO₂)_0.67] nanofiller. Morphology investigations carried out by SEM measurements indicate that the composition of membranes is asymmetric. Indeed, with respect to the direction of the films after casting procedure, the top side (A-side) and bottom side (B-side) present a different nanofiller concentration. The concentration of nanofiller increases gradually from A to B side. The membranes present thicknesses ranging from 170 to 350 nm and are studied by FT-IR ATR and micro-Raman measurements.     

Scattering performance of a plane wave by conducting finite helix

The scattering of a plane wave with a linear polarization by a conducting finite helix is presented. The analytical expresses of scattering field are obtained based on the boundary condition of a sheath helix model. Effects of a pitch angle and electrical size of the helix on the resonant behavior are investigated. The analysis shows that resonant behavior of the forward/backward scattering far field is only depended on the pitch electrical size and the radial electrical size, but it is independent of the turn of the helix.     

Low-frequency scattering from perfectly conducting spheroidal bodies in a conductive medium with magnetic dipole excitation

Inductive electromagnetic means that are currently employed in the exploration of the Earth’s subsurface and embedded voluminous bodies often call for an intensive use, primary at the modeling stage and later on at the inversion stage, of analytically demanding tools of field calculation. Under the aim of modeling implementation, this contribution is concerned with some interesting aspects of the low-frequency interaction of arbitrarily orientated (i.e. three-dimensional) time-harmonic magnetic dipoles, with 3-D perfectly conducting spheroidal bodies embedded in an otherwise homogeneous conductive medium. For many practical applications involving buried obstacles such as Earth’s subsurface electromagnetic probing at low-frequency or any other physical cases (e.g. geoelectromagnetics), non-axisymmetric spheroidal geometry approximates sufficiently such kind of metallic shapes. On the other hand, our analytical approach deals with prolate spheroids, since the corresponding results for the oblate spheroidal geometry can be readily obtained through a simple transformation. The particular physical model concerns a solid impenetrable (metallic) body under a magnetic dipole excitation, where the scattering boundary value problem is attacked via rigorous low-frequency expansions for the incident, scattered and total electric and magnetic fields in terms of positive integral powers of (ik), that is (ik)ⁿ for n ? 0, where k stands for the complex wavenumber of the exterior medium. The purpose of the modeling is to contribute to a simple yet versatile tool to infer information on an unknown body from measurements of the three-component electric and magnetic fields nearby. Our goal is to obtain the most important terms of the low-frequency expansions of the electromagnetic fields, that is the static (for n = 0) and the dynamic (n = 1, 2, 3) terms. In particular, for n = 1 there are no incident fields and thus no scattered ones, while for n = 0 the Rayleigh electromagnetic expression is easily obtained in terms of infinite series. Emphasis is given on the calculation of the next two non-trivial terms (at n = 2 and at n = 3) of the aforementioned fields. Consequently, those are found in closed form from exact solutions of coupled (at n = 2, to the one at n = 0) or uncoupled (at n = 3) Laplace equations and they are given in compact fashion, as infinite series expansions for n = 2 or finite forms for n = 3. Nevertheless, the difficulty of the Poisson’s equation that has to be solved for n = 2 is presented, whereas our analytical approach demands the use of the well-known cut-off method in order to obtain an analytical closed solution. Finally, this research adds useful reference results to the already ample library of scattering by simple shapes using analytical methods.     

First principles study on the properties of p-type conducting In:SnO2

Detailed theoretical investigations on the structural, electronic and optical properties of p-type conducting In:SnO₂ have been conducted by first principle calculations. Analysis on the thermal stability via standard enthalpy of formation calculations shows that In:SnO₂ remains stable at very high In concentration, although the lattice constant expands in a distorted rutile structure with the increase of indium content. This can be attributed to the larger ionic radii and the one less 5p electron of In³⁺. Due to the differences in thermal stabilities of the structures with the same indium concentration, the preferred In³⁺ distribution is to occupy the Sn sites in different (110) slabs, followed by occupying the location in the same (110) slab with a maximized distance between indium ions. Indium element in SnO₂ introduces a band in the low energy region originated from the In 4d orbitals and an acceptor energy level slightly above the Fermi energy. While the large effective mass of the electron holes in the valence band results in the small p-type conductivity of In:SnO₂. The tiny changes in the conduction band and band gap lead to the invariability of the optical spectra in the ultraviolet-visible region. On the contrary, the dramatic enhancement of dielectric function, reflectivity and absorption in infrared region can be interpreted by the transition from the occupied states to the empty bands near E_f as well as the exciton effect. These features make In:SnO₂ a good candidate for applications such as transparent conducting materials, infrared reflecting materials and gas sensors.