无铅石墨导电浆料的制备和性能

以导电石墨粉、低熔无铅玻璃和乙基纤维素松油醇溶液制备了无铅石墨导电浆料。分析了浆料中玻璃粉含量对烧结膜表面电阻、威氏硬度和附着力的影响,给出了石墨导电浆料的配方。研究了浆料的流变性、触变性和粘弹性。用玻璃转变温度为476℃的无铅低熔玻璃配制的浆料在520~580℃烧结后,外观致密光洁;当烧结膜厚度为(25±3)μm时,方阻为80~135?/□,硬度为12.3 N/mm2,附着力为45.6 N。     

Redox Poly-Counterion Doped Conducting Polymers for Pseudocapacitive Energy Storage

Conducting polymers (CPs) have been widely studied for electrochemical energy storage. However, the dopants in CPs are often electrochemically inactive, introducing “dead-weight” to the materials. Moreover, commercial-level electrode materials with high mass loadings (e.g., >10 mg cm⁻²) often encounter the problems of inferior electrical and ionic conductivity. Here, a redox-active poly-counterion doping concept is proposed to improve the electrochemical performance of CPs with ultra-high mass loadings. As a study prototype, heptamolybdate anion (Mo₇O₂₄⁶⁻) doped polypyrrole (PPy) is synthesized by electro-polymerization. A 2 mm thick PPy electrode with mass loading of ≈192 mg cm⁻² reaches a record-high areal capacitance of ≈47 F cm⁻², competitive gravimetric capacitance of 235 F g⁻¹, and volumetric capacitance of 235 F cm⁻³. With poly-counterion doping, the dopants also undergo redox reactions during charge/discharge processes, providing additional capacitance to the electrode. The interaction between polymer chains and the poly-counterions enhances the electrical conductivity of CPs. Besides, the poly-counterions with large steric hindrance could act as structural pillars and endow CPs with open structures for facile ion transport. The concept proposed in this work enriches the electrochemistry of CPs and promotes their practical applications.     

Rugged Textile Electrodes for Wearable Devices Obtained by Vapor Coating Off‐the‐Shelf,Plain‐Woven Fabrics

Fabrics are pliable, breathable, lightweight, ambient stable, and have unmatched haptic perception. Here, a vapor deposition method is used to transform off‐the‐shelf plain‐woven fabrics, such as linen, silk, and bast fiber fabrics, into metal‐free conducting electrodes. These fabric electrodes are resistant to wear, stable after laundering and ironing, and can be body‐mounted with little detriment to their performance. A unique by‐product of conformally vapor coating plain‐woven fabrics is that textile parameters, such as thread material and fabric porosity, significantly affect the conductivity of the resulting fabric electrodes. The resistivities of the electrodes reported herein are linearly, not exponentially, dependent on length, meaning that they can be feasibly incorporated into garments and other large‐area body‐mounted devices. Further, these fabric electrodes possess the feel, weight, breathability, and pliability of standard fabrics, which are important to enable adoption of wearable devices.     

理想导电劈的时域并矢格林函数和时域特性

本文采用本征矢量函数展开(OhmRayleigh)法和Laplace变换导出了理想导电劈的时域并矢格林函数,并系统地分析了它的时域特性。得到了一些结论,完善了C.T.Tai(1973)的理论,为进一步分析劈的时域性质(如时域RCS)提供了参考.     

Broadband,High‐Speed,and Large‐Amplitude Dynamic Optical Switching with Yttrium‐Doped Cadmium Oxide

Transparent conducting oxides, such as doped indium oxide, zinc oxide, and cadmium oxide (CdO), have recently attracted attention as tailorable materials for applications in nanophotonic and plasmonic devices such as low‐loss modulators and all‐optical switches due to their tunable optical properties, fast optical response, and low losses. In this work, optically induced extraordinarily large reflection changes (up to 135%) are demonstrated in bulk CdO films in the mid‐infrared wavelength range close to the epsilon near zero (ENZ) point. To develop a better understanding of how doping level affects the static and dynamic optical properties of CdO, the evolution of the optical properties with yttrium (Y) doping is investigated. An increase in the metallicity and a blueshift of the ENZ point with increasing Y‐concentrations is observed. Broadband all‐optical switching from near‐infrared to mid‐infrared wavelengths is demonstrated. The major photoexcited carrier relaxation mechanisms in CdO are identified and it is shown that the relaxation times can be significantly reduced by increasing the dopant concentration in the film. This work could pave the way to practical dynamic and passive optical and plasmonic devices with doped CdO spanning wavelengths from the ultraviolet to the mid‐infrared region.     

An Elastomeric Poly(Thiophene‐EDOT) Composite with a Dynamically Variable Permeability Towards Organic and Water Vapors

An interpenetrating polymer network (IPN) material with controllable nanoporosity is developed for applications such as chemical protection. The IPN material is based on a conducting polymer backbone consisting of thiophene and 3,4 ethylenedioxythiophene (EDOT) repeat units–poly(thiophene‐EDOT)–formed within a soft polyurethane support. The IPN demonstrates reversible, electrochemically switchable nanoporosity in the absence of standard liquid electrolyte, with the oxidized state being the open (high porosity) state and the reduced state being the closed (low porosity) state. The switching of the IPN between its oxidized (open) and reduced (closed) states is actuated using application of ±1.0 V. The variability in the IPN porosity, induced by the electrochemical switching, is revealed by large changes in water vapor diffusivity, as well as changes in the diffusivities of the chemical agent simulants chloroethyl ethyl sulfide (CEES) and methyl salicylate (MeS). The closed state of the IPN is able to decrease CEES diffusivity by ≈99% compared to expanded Teflon (ePTFE), while the open state allows high MVT rates comparable to ePTFE. The IPN's ability to allow high MVT under non‐threat conditions (open state) and high protection from agents under threat conditions (closed state) is a unique and desirable characteristic of this novel IPN material.     

Metal‐Free Growth of Nanographene on Silicon Oxides for Transparent Conducting Applications

Conventional methods to prepare large‐area graphene for transparent conducting electrodes involve the wet etching of the metal catalyst and the transfer of the graphene film, which can degrade the film through the creation of wrinkles, cracks, or tears. The resulting films may also be obscured by residual metal impurities and polymer contaminants. Here, it is shown that direct growth of large‐area flat nanographene films on silica can be achieved at low temperature (400 °C) by chemical vapor deposition without the use of metal catalysts. Raman spectroscopy and TEM confirm the formation of a hexagonal atomic network of sp²‐bonded carbon with a domain size of about 3–5 nm. Further spectroscopic analysis reveals the formation of SiC between the nanographene and SiO₂, indicating that SiC acts as a catalyst. The optical transmittance of the graphene films is comparable with transferred CVD graphene grown on Cu foils. Despite the fact that the electrical conductivity is an order of magnitude lower than CVD graphene grown on metals, the sheet resistance remains 1–2 orders of magnitude better than well‐reduced graphene oxides.     

计算流体力学应用于铝导线腐蚀案例介绍

介绍如何利用计算流体力学的瞬时分析功能,成功对某面板厂铝导线腐蚀的污染来源提供确认。本方法与概念亦可应用于其它具有流场扩散的类似问题场合。     

Polyaniline–Silica Composite Conductive Capsules and Hollow Spheres

In this paper, we report on the preparation of monodisperse polyaniline (PANi)–silica composite capsules and hollow spheres on monodisperse core–gel‐shell template particles. An extension of the previously reported inward growth method was used. The samples were self‐stabilized without external additives. The core–gel‐shell particles were prepared by the inward sulfonation of monodisperse polystyrene particles. The introduced sulfonic acid and sulfone groups are responsible for the gel properties. The gel‐shell thickness and core size were synchronously controlled over the whole particle radius range. After aniline (ANi) monomer was preferentially absorbed in the sulfonated polystyrene shell, PANi was formed by polymerization. PANi was doped in situ with a sulfonic acid group to give the capsules a high conductivity. PANi hollow spheres were derived after the polystyrene cores were dissolved: their cavity size and shell thickness were synchronously controlled by using different core–gel‐shell particles. The PANi–silica composite capsules and hollow spheres were therefore prepared by a sol–gel process using tetraethylorthosilicate in the conducting shell. The PANi shell became more robust while maintaining the same conductivity level. Morphological results indicate that the PANi and silica formed a bicontinuous network. Fourier‐transform infrared (FTIR) spectra revealed that the hydrogen bonding in the PANi–gel shell was enhanced after the silica phase was incorporated, which could explain the high conductivity level after the silica phase was added. In a converse procedure, silica capsules and hollow spheres were prepared by a sol–gel process that incorporated tetraethylorthosilicate into the core–gel‐shell templates, which was followed by the absorption and polymerization of aniline in the silica shell thus forming PANi–silica composite capsules and hollow spheres. The silica capsules and hollow spheres thereby became conductive.     

Catalytically Doped Semiconductors for Chemical Gas Sensing: Aerogel‐Like Aluminum‐Containing Zinc Oxide Materials Prepared in the Gas Phase

Atmospheric contamination with organic compounds is undesired in industry and in society because of odor nuisance or potential toxicity. Resistive gas sensors made of semiconducting metal oxides are effective in the detection of gases even at low concentration. Major drawbacks are low selectivity and missing sensitivity toward a targeted compound. Acetaldehyde is selected due to its high relevance in chemical industry and its toxic character. Considering the similarity between gas‐sensing and heterogeneous catalysis (surface reactions, activity, selectivity), it is tempting to transfer concepts. A question of importance is how doping and the resulting change in electronic properties of a metal‐oxide support with semiconducting properties alters reactivity of the surfaces and the functionality in gas‐sensing and in heterogeneous catalysis. A gas‐phase synthesis method is employed for aerogel‐like zinc oxide materials with a defined content of aluminum (n‐doping), which were then used for the assembly of gas sensors. It is shown that only Al‐doped ZnO represents an effective sensor material that is sensitive down to very low concentrations (<350 ppb). The advance in properties relates to a catalytic effect for the doped semiconductor nanomaterial.