Shallow hydrogen-induced donor in monocrystalline silicon and quantum wires

Electrical and optical properties of bistable shallow donors in monocrystalline silicon, which are introduced by proton implantation followed by annealing at 450 °C, have been studied. The temperature dependences of equilibrium and non-equilibrium carrier concentration and relaxation kinetics were investigated. IR absorption lines of bistable shallow donor electronic excitations were detected. The obtained experimental data demonstrate that the bistable shallow donors can be identified as quantum wire defect nanoclusters.     

Thickness-dependence of stoichiometry and microstructure characteristics in correlation with conductivity type of CdTe films

CdTe films were prepared by physical vapour deposition on a substrate at room temperature (RT) as well as on a cold (LT) one using low deposition rate. The thickness-dependence of stoichiometry revealed an abrupt decrease in the Cd/Te ratio as the thickness increases. Change of thickness did not affect the type of observed (111) crystallographic texture, only the degree of preferred orientation is enhanced as the film grows. The internal strain was negligible while the crystallite size increased rapidly at small thickness (up to 400 nm), and less thickness dependence was observed with further film growth. However, thickness dependence of lattice parameters showed a minimum and a maximum at approximately 300 nm in the case of RT and LT, respectively. The observed change in conductivity from n- to p-type and its vital correlation with the stoichiometry and structural characteristics were presented. Based on thickness dependence of stoichiometry and lattice parameters as well as the conductivity type, formation and annihilation of lattice defects were considered.     

Changes in Aging Behavior and Defect Structure of Yttria-Fully-Stabilized ZrO2 with Sc2O3 Doping

Methods of suppressing decreased conductivity in 8 mol% Y₂O₃-stabilized–92 mol% ZrO₂ (8YSZ) with aging were investigated. Different amounts of Sc₂O₃ were doped into 8YSZ. The electrochemical properties of Sc₂O₃-doped 8YSZ were measured, and the microstructural and local structural changes were characterized. The present results indicate that an appropriate amount of Sc₂O₃ doping, 3 or 4 mol%, effectively suppresses decreased conductivity with aging in 8YSZ.     

Procedure for the evaluation of the accumulation of defects in metallic structural materials under complex elastoplastic loading

Within framework of the continual fracture mechanics, we describe the engineering approach to the assessment of scattered microdamage accumulation kinetics in metallic materials under elastoplastic loading conditions in case of plane stressed state. Automatized experimental stand and the respective investigation technique are discussed. The stand has been developed based on modification of the UMé-10T electromechanic test machine. State-of-the-art computer technologies and microprocessing hardware are incorporated in the stand automation. We present the technique of experimental assessment of damage accumulation kinetics in metallic structural materials under complex elastoplastic loading conditions with account of two different fracture (cleavage and shear) processes, which technique is based on measuring the specific electric resistance of the specimen. __________ Translated from Problemy Prochnosti, No. 1, pp. 128–137, January–February, 2006.     

AOI技术在激光微孔产品检查中的应用

在过去几年里,小型PCB诸如硅芯片级以及便携式移动电话的生产者和设计者们已经发现:如果要保持自己的竞争力并具备生产高密度封装板能力,就必须采用微孔技术。微孔技术的出现要求针对微孔缺陷的有效检测手段对工艺进行过程控制。本文对激光微孔的自动光学检测进行了详细介绍。     

Rail defects: an overview

For about 150 years, the steel rail has been at the very heart of the world's railway systems. The rail works in a harsh environment and, as part of the track structure, it has little redundancy; thus, its failure may lead to catastrophic derailment of vehicles, the consequences of which can include death, injury, costs and loss of public confidence. These can have devastating and long‐lasting effects on the industry. Despite the advances being made in railway permanent way engineering, inspection and rail‐making technology, continually increasing service demands have resulted in rail failure continuing to be a substantial economic burden and a threat to the safe operation of virtually every railway in the world. This paper presents an overview of rail defects and their consequences from the earliest days of railways to the present day.     

Corrosion failure of Zn–Al detonator housing

Some batches of detonator housings made up of Chromium plated Zn–Al alloy were found in an extensively cracked condition after few months of storage at room temperature. An analysis of the failure showed that the cracks were due to intergranular corrosion facilitated by segregation of lead at the grain boundaries. Improper chromium plating further aggravated the corrosion problem. This failure case emphasises the need for strict control of chemical composition for components made from Zn–Al alloy and the process of Cr plating of the components.     

Plane Problem for Layered Composites with Periodic Array of Interfacial Cracks Under Compressive Static Loading

The current paper addresses the problem of 2-D modelling of the onset of failure process in a layered composite with periodic array of interfacial cracks under static compression along layers. The statement of the problem is based on the most accurate approach, the model of piecewise-homogenous medium. The condition of plane strain state is considered. The shear and the extensional buckling modes are examined. The laminae are modelled by transversally isotropic material (a matrix reinforced by continuous parallel fibres). The complex non-classical failure mechanics problem is solved utilizing finite element analysis. It is found that the 0°-plies volume fraction, the crack length and the mutual position of cracks influence the critical strain in the composite.     

尼龙护套电线印字缺陷的分析及改进的措施

阐述了尼龙护套电线印字过程中,经常出现的几种缺陷,并对这些缺陷产生的原因进行了分析,尤其对印字拖印问题,进行了详细和深入的分析,并提出了一系列的改进措施。     

Defect formation in epitaxial oxide dielectric layers due to substrate surface relief

Defects were characterized in epitaxial (001) CeO₂ films deposited and planarizedin situ on patterned (001) LaAlO₃ substrates by ion beam assisted deposition (IBAD). A hill and valley structure with steps running parallel to the [100] LaAlO₃ axis was produced on the surface of the substrate by photolithography and ion beam etching prior to film deposition. A conformai epitaxial CeO₂ layer of ∼ 100 nm thickness was deposited on the heated substrate by e-beam evaporation. Lattice-matching between the e-beam film and the substrate was of the type: (001) CeO₂∥(001) LaAlO₃ and [110] CeO₂∥[100] LaAlO₃. Evaporative deposition of additional film onto the conformai layer was accompanied by bombardment with a 500 eV argon/oxygen ion beam to promotein situ planarization. Extreme lattice misfit for the orientation (001) CeO₂∥(001)LaAlO₃ and [001] CeO₂∥[001] LaAlO₃ caused formation of dislocations in the e-beam CeO₂ film in the vicinity of individual ledges in the substrate surface. Coherence of the CeO₂ film was locally lost in the step regions of the hill and valley structure. The large patterned steps, which are composed of numerous adjacent ledges in the LaAlO₃ surface, caused nucleation of CeO₂ with a tilt misalignment of up to ∼5‡ about the substrate [100]. Nucleation and growth of nonepitaxial CeO₂ crystallites was observed along the step regions of the film during the IBAD portion of deposition. Defect formation in the e-beam ceria layer due to substrate surface relief indicates that “lattice engineering≓ of multilayer epitaxial structures may not be possible when nonplanar surfaces are created during device fabrication. The IBAD CeO₂ layer was more defective than the conformai layer deposited without the impinging ion beam, even in the portions of the film where epitaxy was maintained throughout both layers.