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71.
72.
通过对比不同硼-磷(B-P)补偿程度的低成本、高杂质含量硅材料制备的太阳电池的性能,发现在含B和其它杂质含量都比较高的Si材料中通过掺入P补偿过多的B可以提高低质量Si片的电阻率、增加少数载流子寿命从而提高电池效率同时还能够减少电池性能的衰减.利用低质量Si材料(B含量2*10-6wt)制作出了效率达到14%左右的大面... 相似文献
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J. Osenbach A. Amin M. Bachman F. Baiocchi D. Bitting D. Crouthamel J. DeLucca D. Gerlach J. Goodell C. Peridier M. Stahley R. Weachock 《Journal of Electronic Materials》2009,38(2):303-324
The thermal stability of flip-chip solder joints made with trilayer Al/Ni(V)/Cu underbump metalization (UBM) and eutectic
Pb-Sn solder connected to substrates with either electroless Ni(P)-immersion gold (ENIG) or Pb-Sn solder on Cu pad (Cu-SOP)
surface finish was determined. The ENIG devices degraded more than 50 times faster than the Cu-SOP devices. Microstructural
characterization of these joints using scanning and transmission electron microscopy and ion beam microscopy showed that electrical
degradation of the ENIG devices was a direct result of the conversion of the as-deposited Ni(V) barrier UBM layer into a porous
fine-grained V3Sn-intermetallic compound (IMC). This conversion was driven by the Au layer in the ENIG surface finish. No such conversion
was observed for the devices assembled on Cu-SOP surface finish substrates. A resistance degradation model is proposed. The
model captures changes from a combination of phenomena including increased (1) intrinsic resistivity, (2) porosity, and (3)
electron scattering at grain boundaries and surfaces. Finally, the results from this study were compared with results found
in a number of published electromigration studies. This comparison indicates that degradation during current stressing in
the Pb-Sn bump/ENIG system is in part due to current-crowding-induced Joule heating and the thermal gradients that result
from localized Joule heating. 相似文献
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Jiaoyi Ning Yanan Zhu Zhao Hu Yuhao Shi Muhammad Umair Ali Junpeng He Yaowu He Feng Yan Shihe Yang Jingsheng Miao Hong Meng 《Advanced functional materials》2020,30(35)
Ion migration induced interfacial degradation is a detrimental factor for the stability of perovskite solar cells (PSCs) and hence requires special attention to address this issue for the development of efficient PSCs with improved stability. Here, an “S‐shaped, hook‐like” organic small molecule, naphthalene diimide derivative (NDI‐BN), is employed as a cathode interface layer (CIL) to tailor the [6,6]‐phenylC61‐butyric acid methylester (PCBM)/Ag interface in inverted PSCs. By realizing enhanced electron extraction capability via the incorporation of NDI‐BN, a peak power conversion efficiency of 21.32% is achieved. Capacitance–voltage measurements and X‐ray photoelectron spectroscopy analysis confirmed an obvious role of this new organic CIL in successfully blocking ionic diffusion pathways toward the Ag cathode, thereby preventing interfacial degradation and improving device stability. The molecular packing motif of NDI‐BN further unveils its densely packed structure with π–π stacking force which has the ability to effectually hinder ion migration. Furthermore, theoretical calculations reveal that intercalation of decomposed perovskite species into the NDI clusters is considerably more difficult compared with the PCBM counterparts. This substantial contrast between NDI‐BN and PCBM molecules in terms of their structures and packing fashion determines the different tendencies of ion migration and unveils the superior potential of NDI‐BN in curtailing interfacial degradation. 相似文献
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We use photoluminescence to observe light-induced degradation in silicon in real time. Numerical simulations are used to match our results and lifetime decay data from the literature with theoretical models for the generation of the light-induced boron–oxygen defects. It is found that the existing model of the slowly generated defect SRC, where its saturated concentration is a function of the majority carrier concentration, does not explain certain results in both p- and n-type samples. A new model is proposed in which the saturated SRC concentration is controlled by the total hole concentration under illumination. 相似文献
80.
Wenyong Ming Shuai Bi Yinghang Zhang Kaijin Yu Chenbao Lu Xiaobin Fu Feng Qiu Ping Liu Yuezeng Su Fan Zhang 《Advanced functional materials》2019,29(14)
Porous carbons, possessing exceptional stability, high surface area, and electric conductivity, are broadly used as superior adsorbent, supporter, or electrode material for environmental protection, industrial catalysis, and energy storage and conversion. The construction of such kinds of materials with designable structures and properties will extremely extend their potential applications, but remains a huge synthetic challenge. Herein, a bottom‐up approach is presented to synthesize one type of fully sp2 carbon–bonded frameworks by transition metal–catalyzed cross‐coupling of different polyphenylenes with electron‐withdrawing 9,9′‐bifluorenylidene (9,9′‐BF) through its 2,7‐position. The resulting porous polymeric carbons exhibit substantial semiconducting properties, such as strong light‐harvesting capabilities in the visible light region, likely due to their π‐extended backbones with donor–acceptor characters. Their electronic and porous structures can be finely tuned via the polyphenylene spacers. The intriguing properties allow these porous carbons to efficiently catalyze dye degradation under visible light or even natural sunlight with high reusability. Meanwhile, associated with their intrinsic structures, these porous carbons also exhibit highly selective degradation activities toward different dyes. In particular, the photodegradation mechanism involving oxygen and electron is elucidated for the first time for such kinds of materials, related to the presence of specific 9,9′‐BF units in their π‐conjugated skeletons. 相似文献