从江苏苏南数字微波线路看广播电视专用网发展前景

新建微波干线电路采用高质量的数字微波设备是广电部科技工作会议的精神之一。本文介绍了江苏苏南数字微波线路，并从方案确定、技术实现、设备选型等方面进行分析比较，从而得到一个合理的整体方案。本文还着重阐述了数字传输的关键设备－编码器的现状与发展趋势，提出广播电视专用网多功能应用的设想。     

我国有线电视事业的现状和发展

本文详细系统地介绍了我国有线是视发展历史和现状，及其经营和管理方法。重点介绍了北美的ＣＡＴＶ技术发展动向。最后，指出我国ＣＡＴＶ事业发展中的应用重视的问题。     

美国高清晰度电视的发展与现状

本文作者根据对美国高清晰度电视（ＨＤＴＶ）现状考察的情况，详细系统地介绍了美国大联盟（ＧＡ）系统的形成及关键技术的确定，使用极化方式进行ＨＤＴＶ的频率规划，普通电视采用数字压缩技术的发展状况，以及美国目前正在讨论和实验的数字显频业务。     

任意型一维FIR数字滤波器设计新方法

本文介绍了一种设计任意型（宽带、窄带、低阶、高阶、低通、高通、带通、带阻）一维FIR数字滤波器新方法．给出设计不同类型滤波器的统一方法。各种类型滤波器脉冲响应的设计公式简单、计算方便。该方法消除了Gibbs现象．不仅克服了优化设计中收敛速度、设计精度及初值选取等问题，而且减少设计高阶滤波器的时间。最后，本文给出了各种类型滤波器设计的仿真结果。     

Energy minimization and design for testability

The problem of fault detection in general combinational circuits is NP-complete. The only previous result on identifying easily testable circuits is due to Fujiwara who gave a polynomial time algorithm for detecting any single stuck fault inK-bounded circuits. Such circuits may only contain logic blocks with no more thanK input lines and the blocks are so connected that there is no reconvergent fanout among them. We introduce a new class of combinational circuits called the (k, K)-circuits and present a polynomial time algorithm to detect any single or multiple stuck fault in such circuits. We represent the circuit as an undirected graphG with a vertex for each gate and an edge between a pair of vertices whenever the corresponding gates have a connection. For a (k, K)-circuit,G is a subgraph of ak-tree, which, by definition, cannot have a clique of size greater thank+1. Basically, this is a restriction on gate interconnections rather than on the function of gates comprising the circuit. The (k, K)-circuits are a generalization of Fujiwara'sK-bounded circuits. Using the bidirectional neural network model of the circuit and the energy function minimization formulation of the fault detection problem, we present a test generation algorithm for single and multiple faults in (k, K)-circuits. This polynomial time aggorithm minimizes the energy function by recursively eliminating the variables.     

350m~3高炉煤气净化单文氏管可调喉口理论计算及分析

通过单文氏管可调喉口的理论计算及分析，找出喉口最佳工作状态下的工艺参数及适合这种设备特性的煤气工作参被变化范围，以期能对实际操作过程及运行状态分析提供理论依据，提出单文氏可调喉口在更广泛意义上的设备、工艺参数选择、计算的方法。     

数值地形图的生成及其水文地貌特征评价

数值地形图(DEM)是利用地理信息系统(GIS)进行流域水文模拟的基础, 其精度直接影响模拟结果在没有现成的数值地形图时, 应用人员往往利用传统的地形图来生成它. 本文分别采用Arc/Info地理信息系统软件提供的哈奇逊法和不规则三角网五次插值法, 对一个实验流域的高程取样点进行插值, 生成了4种不同的数值地形图, 从凹洼分布、流域界定、河网提取、地面坡度和地形指数、以及地面径流汇成等方面, 对它们的水文地貌精度进行了比较. 结果表明, 两种方法都能生成由高程点群所反映的地形, 然而由于哈奇逊法能够结合流域的河网结构及其具有物理基础的水文地貌加强法来处理凹洼问题, 因此大大地提高了其所生成的流域数值地形图水文地貌特征精度.     

A New Variable Diffusion Drying Model for the Second Falling Rate Period of Paddy Dried in a Rapid Bin Dryer

The objectives of this article is to propose a new drying model for the second falling rate period known as the variable diffusion controlled period that follows after the first falling rate period and to propose a new method to determine the second critical moisture content that separates these two periods. Experimental work on paddy drying at minimum fluidization velocity was carried out in a rapid bin dryer. The effects of operating temperatures (60-120°C) and bed depths (2-6 cm) on the paddy drying characteristics were investigated. It was found that the normalized drying rate of paddy was proportional to the normalized moisture content in the first falling rate period but in the second falling rate period, the normalized drying rate of the material varies exponentially with the normalized moisture content. The different relationship between the normalized drying rate and the normalized moisture content in the first and second falling rate periods indicate that two different mechanism of moisture transport are at work. The new exponential model of the second falling rate period and the linear model of the first falling rate period were found to fit the experimental data very well. Derivation from variable diffusion equation shows that the linear model is the result of constant diffusion coefficient whereas the new exponential model is the result of linear diffusion coefficient. This also implies that the first falling rate period is a constant diffusion controlled period and the second falling rate period is a variable diffusion controlled period. In addition, drying kinetics data of a drying process that fits the exponential model over a very slow drying period will show that the drying process is under the effect of a linear diffusion coefficient. It was also found that the proposed new method to determine the second critical moisture content that distinguishes between the first and second falling rate periods by using a sudden change in the value of the drying rate gradient to a much lower value at that point is more rigorous and yet simpler than the method of determining the specific location of the receding drying boundary since it is based on the behavior of the actual drying kinetic data.     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.     

The Content Driven Mobile Internet

The development of future mobile networks will be driven, in large part, by content and web based services. In this paper, we examine several performance, scalability and architectural challenges faced by future mobile web applications and how advanced mobile content delivery techniques can address these challenges. We review existing content delivery using a taxonomy that consists of three categories: network scaling, end system acceleration, and content and protocol optimization. While wireline content delivery focuses on network and server scalability, mobile content delivery will likely benefit most from optimizing radio link usage. We also present our ongoing work in this area, which extends the functionality of edge caching to the terminal, uses user interest correlation information to maintain low terminal power consumption and adds a new dimension to radio resource management. This revised version was published online in August 2006 with corrections to the Cover Date.