锌电积的节电探讨

分析厂影响锌电积电能消耗的因素，提出了锌电积的节电对策与展望。     

数字电位器的应用技术

从应用的角度出发，介绍合理设计应用电路和合理选择数字电位器的种类与型号，来克服数字电位器普遍存在的主要缺点的方法。文章具有较强的针对性和可操作性，对数字电位器的应用实践具有指导作用。     

行波管放大器相位噪声的分析及其抑制

主要分析规则调相信号对行波管放大器频谱纯度的影响,并且根据行波管放大器相位噪声产生的过程和原因,提出两种抑制相位噪声的方法.     

高压线走廊下建设大型公共绿地的探索

通过闵行经济技术开发区范围内高压线走廊下的40万m~2非生产性用地建设成大型公共绿地的实践,提出了“以绿养园,以园养园”的新思路,充分体现“谁种养,谁保护,谁得益”的原则,给上海地区乃至全国开发利用高压线走廊下的土地资源,提供了借鉴。     

提高塑封双列直插式光耦合器绝缘耐压的设计和工艺要点

介绍了研制出其性能达国际先进公司同类产品水平的塑封双列直插式光耦合器的工作原理和提高绝缘耐压的技术难点，从引线框架设计、加工精度控制、内包封材料选型、理想内包封形状控制、塑封气密性的实现、环境条件的完善等方面讨论了提高绝缘耐压的设计和工艺要点。     

Influence of ion bombardment on the properties and microstructure of unbalanced magnetron deposited niobium coatings

The effect of the ion bombardment to unbalanced magnetron deposited, approximately 1.5 and 4.5 μm thick, Nb coatings have been investigated as the bias voltage was varied from U_B=−75 to −150 V. Increasing bias voltage increased the hardness of the coating from 4.5 to 8.0 GPa. This was associated with residual stress and Ar incorporation into the Nb lattice. Strong {110} texture developed in the samples deposited at low bias voltages, while beyond U_B=−100 V a {111} texture became dominant. However, strong {111} texture was observed only with the thicker 3Nb coatings. Secondary electron microscopy investigation of the coating topography showed fewer defects in the thicker coatings. All coatings exhibited good corrosion resistance, with the thicker coatings clearly outperforming the thinner ones. Excessive bias voltages (U_B=−150 V) was found to lead to poor adhesion and loss of corrosion resistance.     

HCMOS器件γ辐射损伤电路分析

本文对最基本的HCMOS器件(反相器和与非门)作了γ辐射损伤实验。通过器件性能变化,分析了γ辐射对电路的作用。     

复合栅控二极管新技术提取热载流子诱生的NMOS/SOI器件界面陷阱的横向分布

提出了用复合栅控二极管新技术提取MOS/SOI器件界面陷阱沿沟道横向分布的原理,给出了具体的测试步骤和方法.在此基础上,对具有体接触的NMOS/SOI器件进行了具体的测试和分析,给出了不同的累积应力时间下的界面陷阱沿沟道方向的横向分布.结果表明:随累积应力时间的增加,不仅漏端边界的界面陷阱峰值上升,而且沿沟道方向,界面陷阱从漏端不断向源端增生.     

Theory of a novel voltage-sustaining layer for power devices

The theory of a novel voltage-sustaining layer for power devices, called a Composite Buffer layer (CB-layer for short) is proposed. The CB-layer can be implemented in several ways, one particular implementation is used here, which consists of alternating n- and p-type regions, that are parallel to the direction of the applied electric field. In the off-state, the fields induced by the depletion charges of both region types compensate each other to allowing the doping in both n-regions and p-regions to be very high without causing a reduction of the breakdown voltage. In the onstate the heavy doping ensures the voltage drop is very low and that the saturation current density high. A simple relationship between the specific on-resistance and R_on and the sustaining voltage V_B can be shown to be R_on=2.53 × 10⁻⁷bV_B^1.23 ωcm², where the breadth b (in μm) of each region is much smaller than the thickness W. The design method of the CB-layer is discussed in some detail. The simulation results are shown to be in perfect agreement with the theory. The structure has application to a wide variety of different power devices. An RMOST structure has been used to demonstrate the benefits of the technique in the paper, for which excellent performance is demonstrated.     

Flashover voltage characteristics of contaminated station insulators under temporary ac overvoltages in the ac system connected with a frequency converter station

According to the recent analysis results of temporary ac overvoltage in the ac system connected with a frequency converter station, large-magnitude over-voltages were confirmed to occur under some special system conditions. Most of the station insulators currently used cannot withstand such overvoltages according to an evaluation based on the data obtained earlier. The necessity of tests to be done to evaluate such performance more accurately was recognized. Both power frequency and switching impulse overvoltage flashover tests were made on contaminated insulators by the method well simulating the natural wetting condition. Switching impulse flashover voltage with the waveshape having a long wavefront time of 2 ms can be well correlated with the flashover voltage characteristics of temporary ac overvoltage. Higher flashover voltage characteristics were obtained by a clean fog test method compared with those obtained by equivalent fog test method.