NO供体型烟酸衍生物的合成及其生物活性研究

为寻找活性更强、副作用更小的烟酸前体药物,以烟酸为先导物,设计、合成了5个硝酸酯类NO供体型烟酸衍生物。经红外光谱、核磁共振氢谱及质谱确证了该目标化合物的化学结构。通过体外抗血小板聚集试验、及体内调血脂作用对目标化合物进行生物活性评价。结果表明目标化合物具有较强的体外抗血小板聚集活性及体内良好的降脂作用。     

施主掺杂多晶（Sr,Ba）TiO3微观结构和介电性能的研究

系统地研究了施主掺杂对多晶ＳｒＴｉＯ３（Ｓｒ，Ｂａ）ＴｉＯ３微观结构和介电性能的影响。ＳＥＭ观察表明：掺杂不同施主，对多晶ＳｒＴｉＯ３晶粒生长起着不同的作用。施主掺杂量影响多晶ＳｒＴｉＯ３，（Ｓｒ，Ｂａ）ＴｉＯ３晶粒的半导化程度及试样介电特性。     

Electrical properties of nickel in silicon

Electrical activity and energy levels as well as diffusion properties of nickel in silicon have not yet been reliably established. In this paper, we investigated the diffusion and the electrical properties of nickel in silicon to confirm that nickel is electrically active and introduces one acceptor and one donor level by combined measurements of Hall coefficient and DLTS, and measurements of the distribution of electrically active nickel in various silicon diodes by DLTS. The former experiments show that bothn- andp- type silicon are compensated by nickel and that nickel introduces an acceptor level ofE _c-0.47 ± 0.04 eV and a donor level ofE _v +0.18 ± 0.02 eV. The concentrations of these two levels are almost identical over the diffusion temperatures from about 800 to 1100° C, indicating that these donor and acceptor levels are due to different charge states of the same nickel center. In the distribution measurements of electrically active nickel in silicon diodes, we inspected how nickel can be observed by DLTS. It was found that the nickel diffusion intop- n junction is rather complicated, the distribution profiles of nickel in the vicinity of thep- n junction being markedly influenced by an additional heating at elevated temperatures after the nickel diffusion. This gives evidence that the difference in silicon devices used in various studies could give rise to different results.     

球形MgCl_2负载Ziegler-Natta催化剂的制备及内给电子体作用机理的研究

应用低速搅拌法制备了球形MgCl2·nEtOH载体,Ticl4处理两次,氩气鼓泡法较好地控制了催化剂的颗粒形态,将所制得的球形催化剂催化丙烯聚合得到颗粒形态较好的球形聚丙烯颗粒。研究表明,内给电子体参与活性中心的形成,影响聚合物的规整性,并提出了可能的作用机理。     

Bi掺杂BaTiO3陶瓷缺陷性质的第一性原理研究

采用第一性原理计算了Bi掺杂BaTiO3陶瓷3种不同的晶格缺陷结构,分别为单独的BiBa掺杂缺陷模式(BTB模型),1个BiBa掺杂缺陷与1个VBa钡空位同时存在(BTB1模型),符合化学计量比的BiBa掺杂缺陷与VBa钡空位缺陷模式(BTB2模型)。BTB模型显示缺陷结构是由施主掺杂机制控制的,Bi与周围的O原子形成典型的离子键,Ti 4+被还原成Ti 3+。在BTB1模型中钡空位的存在则影响了Bi在晶格中与O的相互作用,Bi偏离初始的中心位置,与邻近的3个氧原子形成了弱的共价键,而正是由于这些弱的共价键导致缺陷附近的[TiO6]八面体产生较大畸变,削弱了Ti 4+的极化能力,使缺陷附近的[TiO6]八面体极化能力减弱,此时缺陷结构是由Ba2+离子空位补偿机制控制的。而BTB2模型可以看成是BTB模型与BTB1模型的叠加,因此缺陷结构是由施主掺杂机制与Ba2+离子空位补偿机制共同控制的。     

Donor–acceptor-structured 1,4-diazatriphenylene derivatives exhibiting thermally activated delayed fluorescence: design and synthesis,photophysical properties and OLED characteristics

A new series of luminescent 1,4-diazatriphenylene (ATP) derivatives with various peripheral donor units, including phenoxazine, 9,9-dimethylacridane and 3-(diphenylamino)carbazole, is synthesized and characterized as thermally activated delayed fluorescence (TADF) emitters. The influence of the donor substituents on the electronic and photophysical properties of the materials is investigated by theoretical calculations and experimental spectroscopic measurements. These ATP-based molecules with donor–acceptor–donor (D–A–D) structures can reduce the singlet–triplet energy gap (0.04–0.26 eV) upon chemical modification of the ATP core, and thus exhibit obvious TADF characteristics in solution and doped thin films. As a demonstration of the potential of these materials, organic light-emitting diodes containing the D–A–D-structured ATP derivatives as emitters are fabricated and tested. External electroluminescence quantum efficiencies above 12% and 8% for green- and sky-blue-emitting devices, respectively, are achieved.     

MOS Capacitance-Voltage Characteristics Ⅱ.Sensitivity of Electronic Trapping at Dopant Impurity from Parameter Variations

Low-frequency and high-frequency Capacitance-Voltage（C-V） curves of Metal-Oxide-Semiconductor Capacitors（MOSC）,including electron and hole trapping at the dopant donor and acceptor impurities,are presented to illustrate giant trapping capacitances,from>0.01C_ox to>10C_ox.Five device and materials parameters are varied for fundamental trapping parameter characterization,and electrical and optical signal processing applications.Parameters include spatially constant concentration of the dopant-donor-impurity electron trap,N_DD,the ground state electron trapping energy level depth measured from the conduction band edge, E_C—E_D,the degeneracy of the trapped electron at the ground state,g_D,the device temperature,T,and the gate oxide thickness,x_OX.     

Chlorine auto-doping by chloride vapor phase epitaxial growth of InP

Chlorine auto-doping phenomenon was found for the first time in InP epitaxial growth by using a PCl₃/InP/H₂ system. Chlorine atoms act as a donor in the epitaxial layer and the carrier concentration is dependent on the facet of InP substrate. The carrier concentration of the InP layer on ( 111)B facet was over 10³ times higher than that on (111)A substrate.