首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   16601篇
  免费   1825篇
  国内免费   1148篇
电工技术   641篇
综合类   1205篇
化学工业   4177篇
金属工艺   1170篇
机械仪表   553篇
建筑科学   819篇
矿业工程   1128篇
能源动力   1012篇
轻工业   1236篇
水利工程   568篇
石油天然气   592篇
武器工业   65篇
无线电   1913篇
一般工业技术   2752篇
冶金工业   893篇
原子能技术   352篇
自动化技术   498篇
  2024年   54篇
  2023年   383篇
  2022年   505篇
  2021年   657篇
  2020年   658篇
  2019年   617篇
  2018年   570篇
  2017年   700篇
  2016年   680篇
  2015年   695篇
  2014年   934篇
  2013年   1084篇
  2012年   1148篇
  2011年   1357篇
  2010年   887篇
  2009年   925篇
  2008年   837篇
  2007年   975篇
  2006年   901篇
  2005年   685篇
  2004年   657篇
  2003年   550篇
  2002年   494篇
  2001年   379篇
  2000年   353篇
  1999年   298篇
  1998年   243篇
  1997年   204篇
  1996年   180篇
  1995年   164篇
  1994年   160篇
  1993年   116篇
  1992年   117篇
  1991年   75篇
  1990年   78篇
  1989年   46篇
  1988年   42篇
  1987年   21篇
  1986年   24篇
  1985年   23篇
  1984年   30篇
  1983年   10篇
  1982年   19篇
  1981年   8篇
  1980年   7篇
  1979年   6篇
  1977年   3篇
  1976年   3篇
  1975年   3篇
  1951年   5篇
排序方式: 共有10000条查询结果,搜索用时 31 毫秒
31.
Based on the principle of annexation and phase diagrams, the structural units of In-Pb-Sb and In-Bi-Pb melts were determined, and their calculating models of mass action concentrations were formulated. Calculated results agree well with practical values, which in turn show that the models deduced can reflect the structural realities of corresponding melts and the principle of annexation is applicable not only to some binary metallic melts, but also to ternary metallic melts.  相似文献   
32.
循环风与瓦斯浓度的关系   总被引:1,自引:0,他引:1  
汤守平  李海 《煤炭技术》2002,21(5):30-32
通过循环风时对瓦斯污染数学模型的建立 ,详细阐述了在各种情况下 ,瓦斯浓度的变化情况及治理措施。  相似文献   
33.
多输入单输出逆高斯分布流域汇流模型   总被引:1,自引:0,他引:1  
谢平 《水电站设计》2002,18(2):73-75,78
本文将逆高斯分布应用于由水库和区间组成的复杂的流域汇流系统,并建立了多输入单输出逆高斯单位线模型。讨论了模型参数的估计方法,并对沾益流域的雨洪资料进行了实例分析。  相似文献   
34.
温度是影响黄原胶发酵的重要因素之一。为了优化黄原胶发酵过程的温度控制,在5 L通气式搅拌发酵罐中,非溶氧限制的条件下,对恒温黄原胶发酵过程进行了研究。结果显示,发酵温度为28℃时,在发酵稳定期有较高的菌体浓度,所得黄原胶的丙酮酸含量与表观粘度较高,但有较长的发酵周期。而发酵温度为33℃时,有较短的发酵周期,在发酵稳定期有较高的比产胶速率,但所得黄原胶的丙酮酸含量与表观粘度较低。实验测定了控制黄原胶发酵生长期温度为28℃,稳定期温度为33℃的发酵过程数据。结果表明,与恒温发酵过程相比,通过温度的分段控制可以缩短发酵周期,提高产胶浓度及改善胶的品质,分段控温是黄原胶发酵的一种方便有效的调节手段。  相似文献   
35.
采用溶胶-凝胶法制备了Yb掺杂TiO2纳米光催化剂,并通过XRD和BET等手段进行了表征.以对苯二甲酸作为探针分子,结合化学荧光技术研究了光催化剂表面羟基自由基的生成;并以苯酚为光催化降解反应模型化合物,考察了光催化剂的活性.测定了苯酚在TiO2和Yb掺杂TiO2光催化剂上的吸附常数.结果表明:Yb掺杂使TiO2的粒径减小,比表面积增大,同时导致羟基自由基的生成速率增大.Yb掺杂有利于反应底物在催化剂表面的吸附,Yb的最佳掺入量为Yb/Ti摩尔比=0.8%.  相似文献   
36.
The technique of high pressure is utilized to study the carrier transport behaviour in doped and undoped bulk amorphous (GeSe3·5)100−x Bi x (x=0, 2, 4, 10) down to liquid nitrogen temperature to observe impurity induced modifications in amorphous semiconductors. It is observed that pressure induced effects in lightly doped (2 at % Bi) and heavily doped (x=4, 10) semiconductors are markedly different. Results are discussed in view of the incorporation behaviour of the bismuth impurity.  相似文献   
37.
38.
As the surface properties of the drying materials are very important not only for the drying rate but also for the quality change during drying, the effects of surface concentration on the drying behavior of liquid foods (sugar solutions) were investigated by isothermal drying experiments and by numerical calculation experiments. The isothermal drying experiments with gelled sugar solution systems (sucrose and maltodextrin) were carried out at various relative humidity (RH) values (RH = 0 to 84%). Separate experiments were carried out for determination of the desorption isotherms.

The isothermal drying curves of sugar solutions at RH = 0 to 51% were very similar. Numerical simulations also showed that the drying curves of these sugars at the surface concentration = 0 and 0.1 are almost the same, although the concentration distributions are different.

When a small amount of gelatin was added to sugar solutions, the drying rate decreased remarkably as the gelatin might form a thin film (skin) near the surface, and consequently the retention of ethanol increased.  相似文献   
39.
Electrical properties of homoepitaxial diamond p–n+ junction of boron (B)-doped p-type layer and phosphorus-doped n-type layer on Ib (111) diamond single crystal have been characterized. Current–voltage characteristics show a clear rectifying property with rectification ratio of over 105 at ± 10 V. From capacitance–voltage characteristics, it is found that a spatial distribution of space-charge density Ni of the p–n+ junction is not uniform and Ni at a middle region of the space-charge layer formed at zero bias voltage is higher than that of other region of the space-charge layer. This peculiar characteristic can be explained by superposition of two effects; one is the deep dopant effect due to B atoms in the p-type layer, which makes to reduce Ni at around the edge of the space-charge layer formed at zero bias voltage. The other is the compensation of B acceptors by impurity atoms diffusing during the p–n+ interface and incorporating during the growth of p-type layer, which makes to reduce Ni at the vicinity of the p–n+ interface.  相似文献   
40.
The removal of particulate contamination is a critical issue for many manufacturing processes. It is particularly critical to the electronics industry in which small pieces of microscopic debris remaining after chemical mechanical planarization (cmp) using submicron polishing particles can cause device failure. One way to enhance particle removal following the cmp process is to utilize surfactants. Recent research has shown ways to model the effect of surfactants on enhanced particle removal. However, previous research has not demonstrated the effect of ionic strength on enhanced particle removal associated with surfactant use. Past research has also not shown the combined effects of ionic strength and surfactant concentration on enhanced particle removal using surfactants. This article summarizes the parameters affecting particle removal, and it provides data and analysis on the effect of ionic strength as well as the combined effects of ionic strength and surfactant concentration on particle removal following cmp processing.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号