Colloidal Quantum Dot Infrared Lasers Featuring Sub-Single-Exciton Threshold and Very High Gain

The use of colloidal quantum dots (CQDs) as a gain medium in infrared laser devices has been underpinned by the need for high pumping intensities, very short gain lifetimes, and low gain coefficients. Here, PbS/PbSSe core/alloyed-shell CQDs are employed as an infrared gain medium that results in highly suppressed Auger recombination with a lifetime of 485 ps, lowering the amplified spontaneous emission (ASE) threshold down to 300 µJ cm⁻², and showing a record high net modal gain coefficient of 2180 cm⁻¹. By doping these engineered core/shell CQDs up to nearly filling the first excited state, a significant reduction of optical gain threshold is demonstrated, measured by transient absorption, to an average-exciton population-per-dot 〈N^th〉_g of 0.45 due to bleaching of the ground state absorption. This in turn have led to a fivefold reduction in ASE threshold at 〈N^th〉_ASE = 0.70 excitons-per-dot, associated with a gain lifetime of 280 ps. Finally, these heterostructured QDs are used to achieve near-infrared lasing at 1670 nm at a pump fluences corresponding to sub-single-exciton-per-dot threshold (〈N^th〉_Las = 0.87). This work brings infrared CQD lasing thresholds on par to their visible counterparts, and paves the way toward solution-processed infrared laser diodes.     

Lithium doping and gate dielectric dependence study of solution‐processed zinc‐oxide thin‐film transistors

Abstract— The effects of lithium (Li) doping concentration and gate dielectrics on the performance of solution‐processed zinc‐oxide (ZnO) thin‐film transistors (TFTs) has been investigated. ZnO films with strong c‐axis orientation and lower background conductivity was obtained with 15 at.% of Li. Different crystallization behavior of ZnO was observed in the case of various dielectric surfaces. The 15‐at.% Li‐doped ZnO films (thickness ～20 nm) prepared on SiO² and SiN^x were found to be present in crystalline form, whereas the film prepared on aluminum titanium oxide (ATO) was found to be amorphous. A field‐effect mobility of 1.81 cm²/V‐sec and an Ion/Ioff ratio of 2 × 10⁶ were obtained for the 15‐at.% Li‐doped ZnO TFTs with a bilayer gate dielectric of SiO² and SiN^x. The comparison of dielectric studies showed that the performance of TFTs prepared on SiN^x and ATO are higher than that of the TFTs prepared on SiO².     

In2O3 + xBaO (x = 0.5-5 at.%) - A novel material for trace level detection of NOx in the ambient

Indium oxide (In₂O₃) doped with 0.5-5 at.% of Ba was examined for their response towards trace levels of NO_x in the ambient. Crystallographic phase studies, electrical conductivity and sensor studies for NO_x with cross interference for hydrogen, petroleum gas (PG) and ammonia were carried out. Bulk compositions with x ≤ 1 at.% of Ba exhibited high response towards NO_x with extremely low cross interference for hydrogen, PG and ammonia, offering high selectivity. Thin films of 0.5 at.% Ba doped In₂O₃ were deposited using pulsed laser deposition technique using an excimer laser (KrF) operating at a wavelength of (λ) 248 nm with a fluence of ∼3 J/cm² and pulsed at 10 Hz. Thin film sensors exhibited better response towards 3 ppm NO_x quite reliably and reproducibly and offer the potential to develop NO_x sensors (Threshold limit value of NO₂ and NO is 3 and 25 ppm, respectively).     

CeO2掺杂对ZnO薄膜气敏特性的影响

ZnO薄膜进行CeO2掺杂,研究掺杂含量和热氧化对薄膜结构、表面、晶粒尺寸及气敏特性的影响.结果显示,用热蒸发制备的高纯Zn膜经500℃热氧化,获得c轴取向ZnO多晶薄膜.掺CeO2可抑制晶粒生长使颗粒细化平均粒径减小,同时改善了ZnO薄膜的体相化学计量比,Zn与O的比例从未掺杂时1∶1.28降到1∶1.191.XPS...     

CaF_2掺杂对α-BZN陶瓷结构与介电性能的影响

采用固相反应法制备Bi1.5-xCaxZnNb1.5O7-yFy（0.00≤x≤0.20,以下简称BZN-x）陶瓷样品,研究了Ca2＋、F-共掺杂对BZN-x陶瓷烧结特性、微观结构和介电性能的影响。结果表明：BZN-x陶瓷样品的最佳烧结温度为1 020℃,CaF2在α-BZN中的固溶度是0.05,伴随着CaF2掺杂量的增加,介电常数逐渐减小,而介电损耗先减小然后又微弱增加（测试频率为1 MHz时）。通过介电损耗、电阻率的变化确认了CaF2掺入α-BZN后的缺陷补偿方式,同时也证实随着掺杂量的增加,介电常数峰值温度向低温移动与缺陷补偿方式有关。     

钴钇掺杂（Ba,Sr）TiO_3基介电陶瓷的制备与性能研究

采用二次固相反应法制备Ba0.7Sr0.3TiO3介电陶瓷,研究了掺杂钴、钇离子对钛酸锶钡介电性能的影响。结果表明,陶瓷样品Y3＋、Co3＋的最佳掺杂浓度分别为0.04mol%和0.05mol%,最佳烧结温度为1340℃,样品的相对介电常数为4200,介电损耗（tanδ）为0.005。样品的结构为四方晶系,P4mm空间群。获得了高介电常数、低损耗的Ba0.7Sr0.3TiO3介电陶瓷。     

Effect of Sm-doping on the morphology and magnetic properties of radio frequency magnetron sputtered Ni-Mn-Ga films

Ni55.5Mn21Ga23.5 and Ni54Mn22Ga23Sm1 films were prepared by radio frequency (RF) magnetron sputtering. The effect of Sm do-pant on the morphologic and magnetic properties of Ni55.5Mn21Ga23.5 films was investigated. Sm doping can refine the particle size of the films from 100 to 60 nm, and further grain growth is not occurs even after annealing at 1073 K for 3.6 ks. Compared to Ni55.5Mn21Ga23.5 films, Sm-doped Ni54Mn22Ga23Sm1 films are easier to be magnetized and have a lower martensitic transformation temperature. In addition, the Curie temperature can also be adjusted, decreasing from 350 to 325 K after Sm doping. Martensitic transformation is not observed in the Sm-free films, which is close to the Curie temperature in the Sm-doped films, giving rise to the overlap of the structural and magnetic transi-tion temperatures.     

铋系半导体材料的光催化性能研究进展

光催化技术因其高效、绿色的优点,成为解决环境问题和能源危机的有效技术。研制性能优良的光催化剂是应用和发展光催化技术的研究核心之一。Bi系半导体光催化剂因其在可见光下具有良好的光催化性能而引起人们广泛的关注。为此,分类列举了几种常见的铋系光催化剂及其制备,综述了在光能利用率等方面通过掺杂改性取得的重大成果,并简要介绍了含高价铋的光催化剂的制备及其光催化性能。通过类比分析,从基础理论和实际应用方面提出了相关问题和展望。     

钇掺杂LiCoPO4正极材料的电化学性能研究

采用溶胶-凝胶法合成了LiCoPO4与钇掺杂的正极材料,并研究了该材料的晶型结构、充放电以及循环性能。试验表明:少量Y3+掺杂不影响LiCoPO4的晶格结构;合成的改性正极材料Li0.99Y0.01CoPO4在0.1C倍率下首次放电比容量达到123.0 mAh/g,相比纯相LiCoPO4提高了8%,20次循环后Li0.99Y0.01CoPO4的放电比容量是78.6 mAh/g,改性材料在电化学性能上得到较大提升。