Stable p-type conductivity and enhanced photoconductivity from nitrogen-doped annealed ZnO thin film

We report on the growth of p-type ZnO thin films with improved stability on various substrates and study the photoconductive property of the p-type ZnO films. The nitrogen doped ZnO (N:ZnO) thin films were grown on Si, quartz and alumina substrates by radio frequency magnetron sputtering followed by thermal annealing. Structural studies show that the N:ZnO films possess high crystallinity with c-axis orientation. The as-grown films possess higher lattice constants compared to the undoped films. Besides the high crystallinity, the Raman spectra show clear evidence of nitrogen incorporation in the doped ZnO lattice. A strong UV photoluminescence emission at ~ 380 nm is observed from all the N:ZnO thin films. Prior to post-deposition annealing, p-type conductivity was found to be unstable at room temperature. Post-growth annealing of N:ZnO film on Si substrate shows a relatively stable p-type ZnO with room temperature resistivity of 0.2 Ω cm, Hall mobility of 58 cm²/V s and hole concentration of 1.95 × 10¹⁷ cm^− 3. A homo-junction p-n diode fabricated on the annealed p-type ZnO layer showed rectification behavior in the current-voltage characteristics demonstrating the p-type conduction of the doped layer. Doped ZnO films (annealed) show more than two orders of magnitude enhancement in the photoconductivity as compared to that of the undoped film. The transient photoconductivity measurement with UV light illumination on the doped ZnO film shows a slow photoresponse with bi-exponential growth and bi-exponential decay behaviors. Mechanism of improved photoconductivity and slow photoresponse is discussed based on high mobility of carriers and photodesorption of oxygen molecules in the N:ZnO film, respectively.     

碳纳米管和碳黑掺杂对RDX激光点火特性的影响

采用光声光谱技术和差示扫描量热法研究了碳纳米管（CNTs）和炭黑（CB）掺杂对黑索今（RDX）激光点火特性的影响。结果表明：纯RDX在368mJ激光作用下,没有发生明显变化。经CNTs和CB掺杂处理后,RDX样品在很小的激光能量作用下就会发生分解,CNTs掺杂比cB掺杂对RDX的激光点火特性影响显著,在223mJ二者掺杂都存在一个最佳的点火延滞期。DSC分析表明掺杂后影响了RDX的热分析性能。     

Interfacial reaction and elemental redistribution in Sn3.0Ag0.5Cu-xPd/immersion Au/electroless Ni solder joints after aging

Sn3.0Ag0.5Cu solder doped with 0, 100, and 500 ppm Pd was reflowed with electroless Ni/immersion Au substrate. As Pd concentration increased in the solder, formation and growth of (Cu,Ni)₆Sn₅ were suppressed. After thermal aging, Cu₄Ni₂Sn₅ and Cu₅NiSn₅ were observed at interface of Sn3.0Ag0.5Cu-xPd/Au/Ni systems. As compared to Cu₄Ni₂Sn₅, more Pd dissolved in Cu₅NiSn₅. In addition, Pd doping enhanced the growth of Cu₄Ni₂Sn₅ and slowed the formation of Cu₅NiSn₅, which would stabilize the intermetallic compound. Based on quantitative analysis by field emission electron probe microanalyzer, the correlation between Pd doping and elemental redistribution in solder joints was probed and discussed. This study described a possible mechanism of the formation of different intermetallic compounds in Pd-doped lead-free solder.     

Giant optical gain in a rare-earth-ion-doped microstructure

Modal gain per unit length versus launched pump power is predicted and measured in a 47.5 at.% Yb(3+) -doped potassium double tungstate channel waveguide. The highest measured gain exceeds values previously reported for rare-earth-ion-doped materials by two orders of magnitude.     

Converting graphene oxide monolayers into boron carbonitride nanosheets by substitutional doping

To realize graphene-based electronics, bandgap opening of graphene has become one of the most important issues that urgently need to be addressed. Recent theoretical and experimental studies show that intentional doping of graphene with boron and nitrogen atoms is a promising route to open the bandgap, and the doped graphene might exhibit properties complementary to those of graphene and hexagonal boron nitride (h-BN), largely extending the applications of these materials in the areas of electronics and optics. This work demonstrates the conversion of graphene oxide nanosheets into boron carbonitride (BCN) nanosheets by reacting them with B(2) O(3) and ammonia at 900 to 1100 °C, by which the boron and nitrogen atoms are incorporated into the graphene lattice in randomly distributed BN nanodomains. The content of BN in BN-doped graphene nanosheets can be tuned by changing the reaction temperature, which in turn affects the optical bandgap of these nanosheets. Electrical measurements show that the BN-doped graphene nanosheet exhibits an ambipolar semiconductor behavior and the electrical bandgap is estimated to be ≈25.8 meV. This study provides a novel and simple route to synthesize BN-doped graphene nanosheets that may be useful for various optoelectronic applications.     

Cobalt-doping-induced synthesis of ceria nanodisks and their significantly enhanced catalytic activity

High-quality cobalt-doped ceria nanostructures with triangular column, triangular slab, and disklike shapes are synthesized by tuning the doping amount of cobalt nitrate in a facile hydrothermal reaction. The cobalt-doped ceria nanodisks display significantly enhanced catalytic activity in CO oxidation due to exposed highly active crystal planes and the presence of numerous surface defects.     

金属元素掺杂Li_3V_2(PO_4)_3正极材料的研究进展

金属元素掺杂能从本质上改善Li3V2(PO4)3的电子电导率和锂离子扩散速率,从而提高材料的电化学性能。概述了近年来金属元素掺杂Li3V2(PO4)3的研究进展,分别从掺杂元素和表征技术两方面进行综述,介绍了Mg2+、Ni 2+、Cr3+、Co2+等金属离子掺杂对Li3V2(PO4)3的结构以及电化学性能的影响,并对进一步的研究方向和发展趋势提出了见解。     

Ce对Na0.5Bi0.5TiO3粉体的掺杂和扩渗改性研究

为改善Na0.5Bi0.5TiO3材料的电性能,采用溶胶-凝胶法制备了Na0.5Bi0.5TiO3粉体.通过液相Ce掺杂和气相Ce扩渗两种方法,对Na0.5Bi0.5TiO3粉体进行了改性,采用扫描电子显微镜(SEM)、X射线衍射仪(XRD)、阻抗分析仪和电阻仪对改性前后Na0.5Bi0.5TiO3粉体的组成、结构和电性能的变化进行了研究.结果表明:Ce元素的添加有助于Na0.5Bi0.5TiO3粉体电阻率的降低,而扩渗改性使电阻率的降低更为显著,经600℃扩渗的Na0.5Bi0.5TiO3粉体的电阻率由3.71×106Ω.m降至2.39×101Ω.m;稀土Ce掺杂使Na0.5Bi0.5TiO3的介电常数减小,而Ce扩渗使Na0.5Bi0.5TiO3的介电常数显著增大;Ce掺杂使粒径更加均匀,而随着气相扩渗温度的提高,晶粒粒径逐渐变大;Ce掺杂没有改变Na0.5Bi0.5TiO3的主晶相结构,但Na0.5Bi0.5TiO3粉体经Ce扩渗后,出现了单质Bi及Bi2Ti2O7、Na2Ti9O19、Na2Ti6O13的特征峰.     

Li2CO3-B2O3-V2O5掺杂ZnO-TiO2陶瓷低温烧结的研究

以Li2CO3、B2O3和V2O53种常见的低熔点氧化物为烧结助剂,用传统固相法制备了Li2CO3-B2O3-V2O5掺杂的ZnO-TiO2微波介质陶瓷,并利用XRD、SEM等研究了ZnO-TiO2陶瓷的烧结行为、物相组成、显微结构特征及微波介电性能等。结果表明,当掺入3%(质量分数)Li2CO3-B2O3-V2O5时,在840℃烧结2h可制备出体积密度为4.99g/cm3的ZnO-TiO2陶瓷,达到理论密度的96.5%以上,εr、Q.f、τf分别约为24、22900GHz、-4×10-6/℃。