高效率窄线宽光纤激光器

本文报道了一种环形腔掺饵光纤激光器，得到了泵浦效率高达22.6%，输出线宽小于0.1nm的激光输出。     

Theoretical Discussion of Couple-Mode Using Chirped Fiber Grating for Dispersion Compensation

１ＩｎｔｒｏｄｕｃｔｉｏｎＡｔｐｒｅｓｅｎｔ，ａｓｔｈｅｅｒｂｉｕｍｄｏｐｅｄａｍｐｌｉｆｉｅｒｓｈａｖｅｓｕｃｅｓｆｕｌｙｂｅｅｎａｐｐｌｉｅｄｔｏｏｐｔｉｃａｌｆｉｂｅｒｌｉｎｋｓ，ｔｈｅｌｏｎｇｈａｕｌｈｉｇｈｂｉｔｒａｔｅｏｆｏｐｔｉｃ...     

LaxBa1—xCoO3系导电陶瓷的显微结构与电特性关系的研究

通过Ｘ射线衍射分析和扫描电镜观察，得到了ＬａｘＢａ１－ｘＣｏＯ３系导电陶瓷的显微结构，并发现当Ｘ从０到１变化时，相结构随之发生六方－立多－多相结构变化。在显微结构形态上，呈现出晶粒通道网络，室温电阻率与显微结构之间有明显的对应关系。     

TiO_2压敏电阻陶瓷元件等静压成型试验研究

采用干压及干压加等静压两种成型方法,通过对不同样品的电性能和焊接性能的比较,并通过SEM微观形貌的观察,研究了等静压成型对TiO2压敏电阻陶瓷元件的微观结构及电性能的影响。结果表明,经等静压成型的TiO2压敏电阻陶瓷的微观结构比较致密,气孔减少,元件的电压一致性和焊接性能得到较大的改善。     

Halogen-induced charge transfer polymerization of pyrrole in aqueous media

Simultaneous polymerization and doping of pyrrole have been carried out in the presence of a halogenic electron acceptor, bromine (Br₂) or iodine (I₂), in aqueous dispersion or in a two-phase solvent system. The morphology of the polypyrrole (PPY) so produced is granular and porous. The electrical conductivity of the PPY-I₂ charge transfer (CT) complex is of the order of 10¹ ohm⁻¹ cm⁻¹ while that of the PPY-Br₂ complex is about one order of magnitude less. Both complexes are stable in the atmosphere. The physicochemical properties of the PPY-I₂ and PPY-Br₂ CT complexes prepared under various experimental conditions are examined in detail.     

Growth,characterization and electrical anisotropy in GaTe—a natural semiconducting superlattice

GaTe is a III–VI semiconductor which has layered structure with large anisotropy in electrical properties. Growth of single crystals by the Bridgman technique permitted the measurement of thermoelectric power in orthogonal directions from which the anisotropy of hole effective masses were determined for the first time. From resistivity and Hall effect measurements the carrier activation energies and scattering mechanisms between 10–300°K were found. Study of the temperature dependence of conductivity revealed a variety of conduction mechanisms including weak localization below 20°K, hopping conduction between 20–50 K and band conduction in and across the layer planes atT>70 K. Weak localization was confirmed through observation of negative magnetoresistance. TheI–V characteristics showed quantized behaviour due to tunneling across potential barriers, which may be due to stacking faults between layer planes as observed by TEM studies.     

光栅衍射法测量超短光脉冲的宽度

本文详细阐明了光栅衍射法测量超短光脉冲宽度的原理。测量了ＴＥＡ－Ｎ２激光器泵浦的短腔染料激光器输出的光脉冲的宽度。其结果与用条纹相机测得的结果一致。     

高质量的一级光栅1．55μmDFB激光器

本文详细叙述了ＤＦＢ激光器的设计要点和新的工艺。采用一级全息光栅和二步液相外延法批量研制出高稳定单纵模工作的１．５５μｍ分布反馈激光器（ＤＦＢ—ＬＤ）。外延片成品率＞４０％。器件特性：２５℃时阈值电流２０ｍＡ，单面光功率＞１０ｍｗ，主边模抑制比ＳＭＳＲ达４３ｄＢ（λ／４相移光栅），谱线宽度△ν－２０ｄＢ＝０．３ｎｍ，调制速率＞１．８ＧＨｚ。可靠性测试显示：高温监测光谱稳定，２５°Ｃ时阈值退化率△Ｉｔｈ／ｔ＜０．３ｍＡ／ｋｈ，对应器件预估寿命将超过１０万ｈ。     

Resilient metal spring network silicone-matrix composite for separable interconnections

Resilient metal spring silicone-matrix conducting composites for separable interconnections in electronics were fabricated by the impregnation of silicone into a preform comprising randomly oriented C-shaped Cu-Be springs and a small proportion of Sn-Pb solder, which served to connect the springs at some of their intersections. Composites containing 6.1-9.8 vol.% total filler exhibited volume electrical resistivity 0.5-1.0 mΩ.cm and contact resistivity (with copper) 11-17 mΩ.cm². A compressive stress of about 30 kPa was needed for the low contact resistivity to be reached. The volume 17-26% and the contact resistivity increased by 5% after heating in air at 130-150°C for seven days. Composites containing <9 vol.% total filler showed no stress relaxation for seven days at 6.0% strain.     

Application of SiC-Si functionally gradient material to thermoelectric energy conversion device

Because of its high–temperature chemical stability, SiC ceramic is a promising material for high-temperature device applications such as thermoelectric energy converters. However, the electrical conductivity of SiC ceramic is too low for it to be used as a thermoelectric energy converter at the cold junction. Therefore, we propose a SiC-Si functionally gradient material (FGM) in order to improve the electrical conductivity of the SiC ceramic at the cold junction. An SiC rod was fired in a temperature gradient furnace. One end of the SiC rod was maintained at 2473 K and the other end was maintained at 1973 K for 30 min. After firing, the porous SiC edge fired at 1973 K was dipped into molten Si in order to infiltrate molten Si into the porous SiC. The microstructure of the FGM is classified into three regions: the SiC-Si composite material; the porous SiC ceramic; and the densified SiC ceramic. The electrical conductivity, the Seebeck coefficient and the thermal conductivity for each region of SiC-Si FGM was measured at 300 K; a figure of merit was calculated. The figure of merit of the SiC-Si FGM at the cold junction, at room temperature, was 10⁸ times higher than that of a nongradient SiC ceramic.