用于半导体激光器热沉的金刚石膜/Ti/Ni/Au金属化体系的研究

提出了一种用于半导体激光器热沉的金刚石膜/ Ti/ Ni/ Au金属化体系.采用金属化前期预处理、电子束蒸镀技术和后续低温真空热处理,金属层和金刚石膜之间获得了良好的结合强度.AES分析表明Ti/ Ni/ Au金刚石膜金属化体系中,Ni层起到了良好的阻挡效果;XRD显示预处理过的金刚石膜,镀膜后经过6 73K,2 h低温真空热处理,Ti/金刚石膜界面形成Ti O和Ti C;RBS分析进一步证实该金属化体系在6 73K,1h真空加热条件下具有良好的热稳定性.采用完全相同的半导体激光器结构,金刚石膜热沉的热阻仅为氮化铝热沉的4 0 % .     

PWB设计制造工艺和基材对耐CAF影响的评估

概述了CAF机理,各种标准基材,其它PWB基材和新型非双氰胺FR-4基材的电化学迁移或耐CAF的温度-湿度-偏压测试和数据分析方法。     

基于AuPd/CNT敏感材料的电化学传感器对对乙酰氨基酚的检测

金属纳米材料由于其自身优异的催化性能成为电化学催化剂发展最为迅速的一类催化材料,贵金属催化剂的性能尤为明显。本文利用湿化学法合成了粒径为(8.26±0.2)nm AuPd双金属纳米材料,并与多壁碳纳米管进行复合获得AuPd/CNT复合材料,以此作为敏感材料构建了电化学传感器。Au为主催化剂,Pd为助催化剂,双金属催化剂的协同作用有效地提升了催化性能。以AuPd双金属纳米材料构建的电化学传感器对对乙酰氨基酚(PA)的定量测定具有宽的线性范围(4~1000μmol/L)、低的检测限(0.05μmol/L)。将传感器用于感冒片剂中对乙酰氨基酚的定量测定取得满意的结果,表明AuPd双金属纳米材料在构建电化学传感器用于PA检测中具有良好的应用前景。     

A New Strategy to Effectively Suppress the Initial Capacity Fading of Iron Oxides by Reacting with LiBH4

In this work, a new facile and scalable strategy to effectively suppress the initial capacity fading of iron oxides is demonstrated by reacting with lithium borohydride (LiBH₄) to form a B‐containing nanocomposite. Multielement, multiphase B‐containing iron oxide nanocomposites are successfully prepared by ball‐milling Fe₂O₃ with LiBH₄, followed by a thermochemical reaction at 25–350 °C. The resulting products exhibit a remarkably superior electrochemical performance as anode materials for Li‐ion batteries (LIBs), including a high reversible capacity, good rate capability, and long cycling durability. When cycling is conducted at 100 mA g^?1, the sample prepared from Fe₂O₃–0.2LiBH₄ delivers an initial discharge capacity of 1387 mAh g^?1. After 200 cycles, the reversible capacity remains at 1148 mAh g^?1, which is significantly higher than that of pristine Fe₂O₃ (525 mAh g^?1) and Fe₃O₄ (552 mAh g^?1). At 2000 mA g^?1, a reversible capacity as high as 660 mAh g^?1 is obtained for the B‐containing nanocomposite. The remarkably improved electrochemical lithium storage performance can mainly be attributed to the enhanced surface reactivity, increased Li⁺ ion diffusivity, stabilized solid‐electrolyte interphase (SEI) film, and depressed particle pulverization and fracture, as measured by a series of compositional, structural, and electrochemical techniques.     

基于新型局域电化学沉积技术的MOEMS微结构制备方法

提出了一种基于新型微电极且沉积过程可自动控制的局域电化学沉积技术, 实现了高纵横比的铜微结构的制备。将新型微电极作为阳极固定在微步进电机上, 铜片作为阴极固定在电解液池底, 电解液池中装有0.5 M/L硫酸铜配比0.38 M/L硫酸的电解液。用观察电阻值的方法调整好初始间隙后, 在两电极间加一偏压, 用控制程序控制微步进电机匀速运动, 使微电极与阴极之间的微小间隙基本保持不变, 沉积生长铜微柱。铜微柱的纵横比可达7.2∶1, 直径可小至120 μm。实验结果表明, 该技术设备简单、易操作, 可实现三维微结构高效率、低成本的制备, 进一步研究必将在微光机电系统（MOEMS）及其它微纳系统领域得到广泛应用。     

用于光子晶体的多孔硅制备条件研究

利用扫描电镜观察了不同电压强度、腐蚀液浓度条件下制备的用于二维光子晶体的多孔硅的微观形貌。研究表明在恒压供电模式下更有利于硅基二维光子晶体的制备;随着腐蚀电压强度的增长,孔径和孔深都呈现增长的趋势,增长的幅度逐渐减小,腐蚀效率比的增长幅度也有逐渐变小的趋势;随着腐蚀溶液浓度的减小,腐蚀速率在降低,但腐蚀效率比在增大,虽然多孔硅的生长速度变慢,但是多孔硅的质量更好。     

炼油厂储罐喷铝内防腐效果分析

分析了炼油厂储罐内壁受到腐蚀的原因,简要介绍了喷铝加传统封闭涂料的防腐工艺及其应用效果,探讨了该防腐工艺的失效机理,并提出了改进措施。     

高速脊波导激光器寄生电容的分析

高速调制半导体激光器光源是光纤通信系统、相控阵雷达等的关键器件。高速激光器的寄生电容是影响其调制带宽的因素之一。为了减小寄生电容,针对脊波导结构激光器的电容,采用计算机模拟与实际测试相结合的方法,进行了理论分析和实验验证。结果表明,其寄生电容大小不仅与电极金属化面积有关,还与隔离沟的腐蚀深度有关。当腐蚀至波导层时,寄生电容减小到10pF以下。这一结论对实现激光器的高速调制是非常有意义的。     

Aging study on interfacial microstructure and solder-ball shear strength of a wafer-level chip-size package with Au/Ni metallization on a Cu pad

Eutectic solder balls (63Sn-37Pb) joined to Cu pads with an Au/Ni metallization have been widely used in wafer-level chip-size package (WLCSP) technology for providing electrical and mechanical interconnections between components. However, some reliability issues must be addressed regarding the intermetallic compounds (IMCs). The formation of a brittle IMC layer between the solder/Cu pad interface impacts considerably upon the solder-ball shear strength. In addition, it will degrade the long-term operating reliability of the WLCSP. This study investigates, by means of experiments, the growth of the IMC layer under isothermal aging for the eutectic Sn-Pb solder reflowed on a Cu pad with an Au/Ni metallization. Forming the Cu pad with an Au/Ni metallization was achieved by a simple semiconductor-manufacturing process. The effects of the intermetallic layer on solder-ball shear strength were examined for various parameters, including the thickness of the Au layer, solder-ball size, and the diameter of the Cu pad. Experimental results indicate that two IMC layers, Au_0.5Ni_0.5Sn₄ and Ni₃Sn₄, form at the solder/Cu pad interface after aging. The Au_0.5Ni_0.5Sn₄ intermetallic layer dominates the total thickness of the IMC layer and grows with aging time while the solder-ball shear strength decreases after aging. The degradation of the solder-ball shear strength was found to be caused mainly by the formation of the Au_0.5Ni_0.5Sn₄ layer. The experimental results established that a thinner Au layer on Cu pad can effectively control the degradation of solder-ball shear strength, and this is especially true for smaller ball sizes.