Interfacial reactions in the Sn-(Ag)/(Ni,V) couples and phase equilibria of the Sn-Ni-V system at the Sn-Rich corner

Ni-7wt.%V is commonly used as the barrier layer material in the under-bump metallurgy in the microelectronic industry. Although interfacial reactions between various solders with the nickel substrate have been investigated intensively, the effects of vanadium addition upon the solder/(Ni,V) interfacial reactions have not been studied. Sn/(Ni,V) and Sn-Ag/(Ni,V) interfacial reactions at 250°C were investigated in this study using the reaction couple technique. The vanadium contents of the (Ni,V) substrates examined in this study are 3 wt.%, 5 wt.%, 7 wt.%, and 12 wt.% and the reaction time is 12 h. The results indicate that when the vanadium contents in the (Ni,V) substrate are 5 wt.% and higher, the Sn/(Ni,V) and Sn-Ag/(Ni,V) interfacial reactions are different from those in the solder/Ni couples. Besides the Ni₃Sn₄ phase as commonly formed in the reaction with Ni substrate, a new ternary T phase has been found, and the reaction path is L/Ni₃Sn₄/T/(Ni,V). A 250°C Sn-Ni-V isothermal section is proposed based on the three constituent binary systems and limited experimental results obtained in this study. The reaction path is illustrated with the proposed Sn-Ni-V isothermal section. No stable ternary Sn-Ni-V phase is found from the phase equilibria study, and the new T phase is likely a metastable phase.     

基于纳米针尖反射靶的X射线显微系统

本文利用电化学腐蚀方法制备出曲率半径＜100 nm 的钨针尖,并在 FEI Quantum 600型扫描电镜（ SEM）中作为反射靶材以搭建微焦点X射线显微系统。通过SEM发射电子束轰击纳米钨针尖,以减少电子束和靶材的物理作用区域,进而减小X射线源的光斑尺寸,实现高分辨率的X射线显微成像。采用线对卡来评价系统的最佳成像分辨率,实验结果表明：系统在加速电压30 kV、电子束束流120 nA、SEM的工作距离5 mm、放大倍数为100倍、探测器采集时间为180 s的条件下,可以获得优于1μm的分辨率图像。     

硼离子选择注入制备多孔硅微阵列

根据 p型硅和 n型硅不同的制备多孔硅的工艺条件 ,利用硼离子选择注入 ,在 n型硅片上的局部微区域 ,形成易于腐蚀的 p型硅 ,用电化学腐蚀方法制备出图形化的多孔硅阵列 .省去了传统掩膜腐蚀工艺的掩膜材料的选取与制备以及后道工艺中掩膜材料的清除等工艺 ,克服了掩膜材料掩蔽效果较差以及存在横向钻蚀等缺点 .通过 AFM,SEM测试 ,证明该方法的效果很好     

晶片CMP后表面纳米颗粒的去除研究

对晶片化学机械抛光(CMP)后表面吸附的纳米颗粒去除进行了研究,分析了晶片表面吸附物的种类及吸附机理。由于晶片表面吸附的有机物多为大分子物质,它在晶片表面的吸附除了容易处理的物理吸附外,还会和晶片表面构成化学键,形成难以处理的化学吸附。对清洗过程中颗粒的去除有严重的影响,提出利用电化学清洗,结合表面活性剂和兆声波清洗的方法去除晶片表面的纳米颗粒。经金相显微镜观察和原子力显微镜检测,晶片表面纳米颗粒能得到很好地去除,效果明显优于单纯的兆声波清洗方法。     

Controllable Fabrication of Transparent Macroporous Graphene Thin Films and Versatile Applications as a Conducting Platform

Graphene sheets have been demonstrated to be the building blocks for various assembly structures, which eventually determine the macroscopic properties of graphene materials. As a new assembly structure, transparent macroporous graphene thin films (MGTFs) are not readily prepared due to the restacking tendency of graphene sheets during processing. Here, an ice crystal‐induced phase separation process is proposed for preparation of transparent MGTFs. The ice crystal‐induced phase separation process exhibits several unique features, including efficient prevention of graphene oxide restacking, easy control on the transparency of the MGTFs, and wide applicability to substrates. It is shown that the MGTFs can be used as porous scaffold with high conductivity for electrochemical deposition of various semiconductors and rare metal nanoparticles such as CdSe, ZnO, and Pt, as well as successive deposition of different materials. Notably, the macroporous structures bestow the MGTFs and the nanoparticle‐decorated MGTFs (i.e., Pt@MGTF and CdSe@MGTF) enhanced performance as electrode for oxygen reduction reaction and photoelectrochemical H₂ generation.     

(CoFe)Se2@NC超级电容器电极材料的制备及其电化学性能

金属-有机框架(MOF)衍生的过渡金属硒化物和多孔碳纳米复合材料具有巨大的储能优势,是应用于电化学储能的优良电极材料。采用共沉淀法制备CoFe类普鲁士蓝(CoFe-PBA)纳米立方,并通过静电组装在CoFe-PBA上包覆聚吡咯(PPy)得到CoFe-PBA@PPy;通过在400℃氮气中退火并硒化成功制备了氮掺杂的碳(NC)包覆(CoFe)Se₂的(CoFe)Se₂@NC纳米复合材料,并对其结构和形貌进行了表征。以(CoFe)Se₂@NC为电极制备了超级电容器,测试了其电化学性能,结果表明,在电流密度1 A/g时超级电容器的比电容达到1047.9 F/g,在电流密度5 A/g下1000次循环后具有良好的循环稳定性和96.55%的比电容保持率。由于其性能优越、无毒、成本低和易于制备,未来(CoFe)Se₂@NC纳米复合材料在超级电容器中具有非常大的应用潜力。     

Ultrathin Organic Electrochemical Transistor with Nonvolatile and Thin Gel Electrolyte for Long‐Term Electrophysiological Monitoring

Skin‐based electrical‐signal monitoring is one of the basic and noninvasive diagnostic methods for observing vital signals that contain valuable information about the dynamic status of the inner body. Soft bioelectronic devices are developed for the acquisition of high‐quality biosignals by taking advantage of their inherent thin and soft bodies. Among these devices, the organic electrochemical transistor (OECT) is a promising local transducing amplifier because of its key advantages, such as low operating voltage, high transconductance, and biocompatibility. However, the transistor's direct electrolyte‐gated operation limits its ability to measure biosignals only when the electrolyte exists. Here, an ultrathin OECT‐based wearable electrophysiological sensor based on a thin (≈6 µm) and nonvolatile gel electrolyte is reported, which can operate on dry biological surfaces. This sensor can measure biopotentials with a high mechanical stability and high signal‐to‐noise ratio (24 dB) even from dry surfaces of the human body and also shows stable performance during long‐term continuous monitoring and multiple reuse in a test that lasted more than a week.     

High Precision,Electrochemical Detection of Reversible Binding of Recombinant Proteins on Wide Bandgap GaN Electrodes Functionalized with Biomembrane Models

We report a novel hybrid charge sensor realized by the deposition of phospholipid monolayers on highly doped n‐GaN electrodes. To detect the binding of recombinant proteins with histidine‐tags, lipid vesicles containing chelator lipids were deposited on GaN electrodes pre‐coated with octadecyltrimethoxysilane monolayers. Owing to its optical transparency, GaN allows the confirmation of the fluidity of supported membranes by fluorescence recovery after photo‐bleaching (FRAP). The electrolyte‐(organic) insulator‐semiconductor (EIS) setup enables one to transduce variations in the surface charge density ΔQ into a change in the interface capacitance ΔC _p and, thus, the flat‐band potential ΔU _FB. The obtained results demonstrate that the membrane‐based charge sensor can reach a high sensitivity to detect reversible changes in the surface charge density on the membranes by the formation of chelator complexes, docking of eGFP with histidine tags, and cancellation by EDTA. The achievable resolution of ΔQ ≥ 0.1 μC/cm² is better than that obtained for membrane‐functionalized p‐GaAs, 0.9 μC/cm², and for ITO coated with a polymer supported lipid monolayer, 2.2 μC/cm². Moreover, we examined the potential application of optically active InGaN/GaN quantum dot structures, for the detection of changes in the surface potential from the photoluminescence signals measured at room temperature.     

场引晶体管双极理论:Ⅹ.基本物理和理论(所有器件结构)

本文描述半导体场引晶体管器件物理和理论所用的根本原则,它适用电场中有两种载流子的器件.讨论边界条件对器件电流电压特性的重要性.作为例子,计算两种边界条件下的转移直流电压特性:电势边界给出很高、流进内禀晶体管、飘移限制抛物型电流,电化学势边界仿真电子和空穴接触,给出很低、越过势垒注入、扩散限制电流,具有理想、每量级60mV、指数型亚阈值区倾斜.双MOS栅薄纯基硅场引晶体管为典型结构.