Stability of formal thought disorder and referential communication disturbances in schizophrenia.

This study examined the degree to which different types of communication disturbances in the speech of 48 schizophrenia patients and 28 controls were variable and state related versus stable and traitlike. Clinically rated formal thought disorder and 5 types of referential disturbance showed substantial stability within participants over time. The sixth type of referential disturbance, the vague reference, was not stable over time. Formal thought disorder was associated with the severity of core psychotic symptoms in patients, whereas referential disturbances showed little or no association with positive or negative symptom severity. Furthermore, changes in psychotic symptoms over time were accompanied by corresponding changes in formal thought disorder but not referential disturbances. These results support the idea that some types of referential disturbances are traitlike and may be reflective of vulnerability as well as manifest illness. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

基于约束优化的联想记忆模型学习算法

本文提出了一种对称互连神经元网络的学习策略,利用全局约束优化方法确定连接权。优化过程采用了梯度下降技术。这种学习算法可以保证训练样本成为系统的稳定吸引子,并且具有优化意义上的最大吸引域。本文讨论了网络的存储容量,训练样本的渐近稳定性和吸引域大小。计算机实验结果说明了学习算法的优越性。     

调节阀流量特性控制分析

介绍了调节阀的流量基本知识，从控制理论的角度，分析了调节阀的理想流量特性、工作流量特性和系统稳定性，指出了在热工领域内应用调节阀时的一些注意事项。     

Thermal stability of interfaces between metals and InP-based materials

The thermal stability of interfaces between metals (Ni, Pt, Ti, Mo) and III-V compound semiconductors has been investigated by the application of Rutherford backscattering spectrometry. Metal diffusion and interfacial lattice disorder of the semiconductors were analyzed for various metal/semiconductor samples annealed at temperatures up to 500°C. The interfaces of Ni/GaAs and Ti/GaAs were found to be more stable than those of Ni/In-based semiconductors and Ti/ In-based semiconductors, respectively. Faster diffusion of Pt atoms was ob-served in In-and As-containing materials than in P-containing materials. Mo/ semiconductor interfaces were the most stable.     

FED制作工艺研究

本文介绍了我们开发的ＦＥＤ工艺，包括；硅锥场致发射阵列的制作，栅极制作，阳极支柱的制作和平板透明真空封装，对工艺中的难点及对策作了详细描述。利用上述工艺，已经制成了平板数码管，其栅阴特性理想，阳阴之间也能测得明显的场致发射特性产伴有荧光激发。     

高温过热器12Cr2MoWVTib（102）钢管的显微组织和相结构分析

本文对原始状态和在火力发电厂使用不同时间的高这热器１０２钢管进行了显微组织和相结构变化规律的探讨和研究。显微组织研究表明，１０２钢管在高温高压下长期运行过程中，使用温度对显微组织和碳化物相有明显影响，而使用时间对其影响不如温度影响强烈。碳化物颗粒图象分析表明，碳化物随着使用时间缓慢长大，而新的碳化物不沉淀，使颗粒总数不断增加，颗粒，间距逐渐缩小。Ｘ射线衍射数据证明，钢管在高温长期使用过程中，ＭＣ相     

Nd：碲酸盐玻璃的光谱和激光性质

对比了各种激光玻璃的光谱性质，指出碲酸盐玻璃是一咱理想的激光介质，并资产在室温下实现了钛宝石激光器泵浦了Ｎｄ：碲酸盐块体玻璃的激光发射，激光阈值４．２０ｍＪ，斜率效率１４．７％。     

对遂昌金矿采场结构参数的探讨

对于遂昌金矿合理的采场结构参数，目前没有理想的确定方法。本文联系上盘围岩的构造裂隙，矿房的支护形式等提出采场稳定跨度判断指标。经４０个采场的检验，值信度达９７．５％。     

非晶硅基薄膜的等离子体刻蚀光发射谱检测

本文研究了采用锁定放大相干检测技术的等离子体光发射谱检测系统。用该系统检测了仅用CF4作为刻蚀气体刻蚀非晶硅基薄膜的等离子体光发射谱。分析了检测结果和刻蚀机理。