自动动态补偿功能改善酸蚀蚀刻不均匀性问题

在酸蚀制程中,由于其蚀铜量较大,蚀刻线生产时蚀刻速度较慢,导致蚀刻不均匀性对线路制作存在很大影响,为改善蚀刻不均匀性的问题,采用奥宝公司专门开发的可制造性设计功能----自动动态补偿(Dynamic Etch Compensation),根据不同的间距设置不同的线宽补偿量,来确保蚀刻后线宽的一致性。     

高密度Si基半导体电容器的性能及其制作

随着各种混合信号电路的性能和集成度的迅速提高以及对电路模块和元器件小型化的需要,集成无源技术成为一种取代分立无源器件以达到小型化的解决方案。鉴于电容器被广泛用于滤波、调谐和电源回路退耦等各种板级集成封装中,采用Si MEMS工艺,在半导体表面深刻蚀三维(3D)图形以增大有效表面积,制作了一种高电容密度的半导体pn结退耦电容器,并分析研究了其主要制成工艺和性能。结果显示,所制作的电容器的电容密度达8～12nF/mm2,相比无表面三维刻蚀图形的半导体电容器电容密度增大了10倍以上,退耦频率范围为10kHz～3.2GHz,可用于中低频率较大范围内的退耦。     

Growth of large-diameter ZnTe single crystals by liquid-encapsulated melt growth methods

The 80-mm-diameter ZnTe single crystals were successfully obtained by the liquid-encapsulated Kyropoulos (LEK) method. Both 〈100〉- and 〈110〉-oriented single crystals were reproducibly grown by using ZnTe seed crystals. Furthermore, 80-mm-diameter, 〈100〉 and 〈110〉 ZnTe single crystals were obtained by the pulling method. The etch pit densities (EPDs) of the grown crystals by the LEK and pulling methods were lower than 10,000 cm⁻². The strain in the grown crystals by the pulling method was lower than that of LEK crystals.     

冷轧普碳黑退钢带不耐酸腐蚀原因及影响因素分析

对某公司生产的Q235钢冷轧黑退钢带镀锌前酸蚀后出现花斑及蚀坑的原因进行了分析,并通过腐蚀试验分析了影响普碳钢带耐酸腐蚀性的主要因素。结果表明：该冷轧黑退钢带酸洗时出现花斑和蚀坑等缺陷主要是由于其表层显微组织不均匀,珠光体呈聚集团状分布造成的;影响普碳钢带耐酸腐蚀性的因素主要有钢带的材质及组织状态;在相同的酸蚀条件下,钢中的碳含量越高,钢的组织变形越大,钢带越容易被腐蚀。     

Comparative study on the properties of amorphous carbon layers deposited from 1-hexene and propylene for dry etch hard mask application in semiconductor device manufacturing

Amorphous carbon layers (ACLs) were prepared by plasma enhanced chemical vapor deposition (PECVD) from 1-hexene (C₆H₁₂) and propylene (C₃H₆) as a carbon source at different temperatures for dry etch hard mask of semiconductor devices manufacturing process. The deposition rate of ACL deposited at 550 °C from C₆H₁₂ and C₃H₆ was 5050 Å/min and 6360 Å/min. Although the deposition rate of ACL deposited from C₆H₆ was lower than that from C₃H₆, normalized deposition rate of ACL deposited from C₆H₁₂ was 1.64 times higher than that from C₃H₆. The relative amount of hydrocarbon contents measured by FTIR (Fourier transformation infrared) and TDS (thermal desorption spectroscopy) was decreased with the increase of deposition temperature. Raman results showed that the numbers and size of graphite cluster of ACLs deposited from each source were increased with the increase of deposition temperature. The extinction coefficient of ACL deposited at 550 °C from C₆H₁₂ was 0.51 and that from C₃H₆ was 0.48. The density of ACL deposited at 550 °C from C₆H₁₂ was 1.48 g/cm³ and that from C₃H₆ was 1.45 g/cm³. The dry etching rate of ACL deposited at 550 °C from C₆H₁₂ was 1770 Å/min and that from C₃H₆ was 1840 Å/min. The deposition rate, dry etch rate and the amount of hydrocarbon contents of ACLs deposited from each carbon source were decreased with the increase of deposition temperature but extinction coefficient and density were increased with the increase of deposition temperature. We concluded that the variation behavior of the deposition characteristics and film properties of ACLs from C₆H₁₂ with the increase of deposition temperature was the same as those of ACLs from C₃H₆. The high density and low dry etch rate of ACL from C₆H₁₂ can be explained by less hydrocarbon incorporation during deposition and these properties are more favorable for the dry etch hard mask application in semiconductor device fabrication.     

过孔刻蚀工艺优化对过孔尺寸减小的研究

为了适应TFT-LCD小型化与窄边框化以及在面板布线精细化的趋势,提高工艺设计富裕量以及增加面板的实际利用率,之前做过钝化层沉积工艺优化来减小液晶面板阵列工艺中连接像素电极与漏极的过孔尺寸的研究。本文在此基础上进行过孔刻蚀工艺的优化,从而最终达到进一步减小过孔尺寸实现TFT-LCD小型化与窄边框化的趋势。通过设计实验考察了影响过孔大小刻蚀主要影响因素(功率、压强、气体比率、刻蚀速率选择比)。实验结果表明,在薄膜沉积优化的基础上可使过孔的尺寸再降低10%~20%。对其进行了良率检测与工艺稳定性评价,最终获得了过孔尺寸减小的方案,并成功导入到产品生产中,从而提高了产品品质。     

一种新型的锥尖制作方法研究

主要介绍利用反应离子腐蚀和等离子腐蚀相结合的方法制作真空微电子压力传感器中锥尖阵列。探讨合理选择制作材料，优化锥尖形状，锐化锥尖尖度，以提高传感器灵敏度，增大阴极锥尖的发射电流。测试结果表明：优化的锥尖发射电流在电压为3V时可达0．2nA，灵敏度为0．1μA／g。     

ECR plasma etch fabrication of C-doped base InGaAs/InP DHBT structures: A comparison of CH4/H2/Ar vs BCl3/N2 plasma etch chemistries

We compare ECR plasma etch fabrication of self-aligned thin emitter carbondoped base InGaAs/InP DHBT structures using either CH₄/H₂/Ar or BCl₃/N₂ etch chemistries. Detrimental hydrogen passivation of the carbon doping in the base region of our structure during CH₄/H₂/Ar dry etching of the emitter region is observed. Initial conductivity is not recovered with annealing up to a temperature of 500°C. This passivation is not due to damage from the dry etching or from the MOMBE growth process, since DHBT structures which are ECR plasma etched in BCl₃/N₂ have the same electrical characteristics as wet etched controls. It is due to hydrogen implantation from the plasma exposure. This is supported with secondary ion mass spectroscopy profiles of structures which are etched in CH₄/D₂/Ar showing an accumulation of deuterium in the C-doped base region.     

XeCl准分子激光精细刻蚀金刚石和玻璃的实验研究

研究了XeCl激光精细刻蚀玻璃、金刚石等材料的能流阈值和单脉冲能流密度、激光脉冲重复频率等激光参数对单脉冲刻蚀深度的影响，并与理论计算结果进行了比较，为XeCl激光在该加工领域的实际应用提供了实验数据和理论依据。     

Effect of reactive ion etch-induced damage on the performance of 4H-SiC schottky barrier diodes

The effect of reactive ion etch (RIE) induced damage on 4H-SiC surfaces etched in fluorinated plamas has been investigated and characterized using Ni Schottky diodes and x-ray photoelectron spectroscopic surface analysis. The diodes were characterized using current-voltage, current-voltage-temperature, and capacitance-voltage measurements with near ideal forward characteristics (n=1.07) and forward current density as high as 9000 A/cm² from the control (unetched) devices. High current handling capability was observed in diodes with etched surfaces as well. Diodes with surfaces etched in CHF₃ containing plasmas showed a significant reduction in the barrier height compared to the diodes with surfaces etched in CF₄ containing plasma. Control devices exhibited high leakages when reverse biased, which is attributed to the presence of a thin (∼2 nm) oxide layer at the metal-semiconductor interface. However, under reverse bias diodes with CHF₃-etched surfaces showed improvement in leakage current compared to diodes with CF₄-etched surfaces and the control diodes.