固体核径迹火花自动计数器效率标定

对固体径迹火花自动计数器探测效率的影响因素进行了分析,重新确定了最佳径迹蚀刻条件以及放电参数。利用小型平板裂变电离室在多种模型下对固体径迹火花自动计数器探测效率进行了重新标定,得到了不同实验条件下固体径迹火花自动计数器效率。     

Bonding performance of universal adhesives to er,cr:YSGG laser‐irradiated enamel

Universal adhesives have been recently introduced for use as self‐etch or etch‐and‐rinse adhesives depending on the dental substrate and clinical condition. However, their bonding effectiveness to laser‐irradiated enamel is still not well‐known. Thus, the aim of this study was to compare the shear bond strength (SBS) of universal adhesives (Single Bond Universal; Nova Compo‐B Plus) applied to Er,Cr:YSGG laser‐irradiated enamel with SBS of the same adhesives applied in self‐etch and acid‐etching modes, respectively. Crown segments of sixty bovine incisors were embedded into standardized acrylic blocks. Flattened enamel surfaces were prepared. Specimens were divided into six groups according to universal adhesives and application modes randomly (n = 10), as follows: Single Bond Universal/acid‐etching mode; Nova Compo‐B Plus/acid‐etching mode; Single Bond Universal/self‐etching mode; Nova Compo‐B Plus/self‐etching mode; and Single Bond Universal/Er,Cr:YSGG Laser‐etching mode; Nova Compo‐B Plus/Er,Cr:YSGG Laser‐etching mode. After surface treatments, universal adhesives were applied onto surfaces. SBS was determined after storage in water for 24 h using a universal testing machine with a crosshead speed of 0.5 mm min^?1. Failure modes were evaluated using a stereomicroscope. Data was analyzed using two‐way of analyses of variances (ANOVA) (p = 0.05). Two‐way ANOVA revealed that adhesive had no effect on SBS (p = 0.88), but application mode significantly influenced SBS (p = 0.00). Acid‐etching significantly increased SBS, whereas there are no significant differences between self‐etch mode and laser‐etching for both adhesives. The bond strength of universal adhesives may depend on application mode. Acid etching may significantly increase bond strength, while laser etching may provide similar bond strength when compared to self‐etch mode.     

离子束刻蚀光学薄膜的速率定标技术

离子束刻蚀技术现在越来越多被应用在可见光乃至红外薄膜中,在这一技术中最为关键的环节就是如何精确地测量离子源对薄膜的刻蚀速率,此速率因不同材料不同工艺条件而变化。现在利用光谱测量与数据拟合的方法,能够快速简便地测定出被刻蚀的材料的物理厚度,从而标定离子束刻蚀的速率。     

纯钛微细群孔的超声辅助光刻电解加工

采用光刻电解技术,可以选用对环境污染影响小、成本较低的腐蚀液,实现难蚀除金属材料的微细阵列结构加工,优于化学腐蚀方法。为克服电解过程中局部产生的热量和析氢造成的腐蚀不均,进行了纯钛（Ti的质量分数为99.6%）微细群孔的超声辅助光刻电解加工试验研究。试验结果表明,超声能显著改善极间工作液的循环,通过合理选择极间距离、电参数和声场参数等工艺条件,可以有效降低表面粗糙度,材料蚀除速率达到30μm/min。

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Magnetic field-assisted photochemical machining (MFAPCM) of SS316L

In this paper, a new technique of photochemical machining (PCM) process has been described. The objective of this study is to investigate the effect of applying a magnetic field on the PCM of AISI 316?L stainless steel. The experiments were planned and conducted using a Full Factorial Design (FFD) approach. The control parameters selected were magnetic field, temperature, concentration and time. The analysis of the results shows significant improvement in the etch rate due to the application of a magnetic field. The highest etch rate was achieved at a concentration of 700?g/l, at the temperature of 60°C in a static magnetic field. The improvement of the etch rate is 2.5 times with the application of magnetic field as compared to the conventional PCM process.     

The effects of diffusion coefficient on the etching process of sacrificial oxide layers

The etching rate in hydrofluoric acid (HF) of a sacrificial oxide layer decreases during the extended etching process, as indicated by experiments with temperature from 298 to 308 K at different HF concentration. Existing models indicate that the etching solution's concentration at the etching front decreases during extended etching since the diffusion distance of HF from the source of the solution increases, resulting in the decrease of the etching rate. However, it is found that the measured etching rates do not decrease as seriously as predicted by the models. The difference of etching rate between the experiments and the model can reach as high as 30% for extended etching process. A modified model is proposed to explain this phenomenon by considering the diffusion coefficient of HF as a function of concentration in the solution. In the modified model, the decrease of the HF concentration causes the increase of the HF diffusion coefficient, which will partly compensate the decrease of the concentration caused by the long diffusion distance. In addition, the diffusion coefficient as a function of temperature is also included in the modified model. It is found that the modified model matches well the experimental data.     

去除光刻胶的新干法工艺

除去干刻或高剂量等离子注入后的光刻胶，一般是采用化学溶剂和酸类等湿刻法，以前有时采用干燥氧的等离子灰化法，然而成本高，具有危险性和污染性的化学湿刻法直接造成了环境污染，使得全球气候变暖，能源的大量消耗，地下水受到污染等等，一种新的干式去胶并且处理后可用去离子水DI清洗残留物的工艺方法（ENVIRO）已经在半导体芯片厂被成功地使用了12个多月。对于产量10000片／周的芯片厂，相对于化学湿刻法一年可以节省5百万美元溶剂消耗。     

RM 8111: Development of a Prototype Linewidth Standard

Staffs of the Semiconductor Electronics Division, the Information Technology Laboratory, and the Precision Engineering Laboratory at NIST, have developed a new generation of prototype Single-Crystal CD (Critical Dimension) Reference (SCCDRM) Materials with the designation RM 8111. Their intended use is calibrating metrology instruments that are used in semiconductor manufacturing. Each reference material is configured as a 10 mm × 11 mm silicon test-structure chip that is mounted in a 200 mm silicon carrier wafer. The fabrication of both the chip and the carrier wafer uses the type of lattice-plane-selective etching that is commonly employed in the fabrication of micro electro-mechanical systems devices. The certified CDs of the reference features are determined from Atomic Force Microscope (AFM) measurements that are referenced to high-resolution transmission-electron microscopy images that reveal the cross-section counts of lattice planes having a pitch whose value is traceable to the SI meter.     

浅析余热锅炉循环水加药处理

转炉烟道冷却壁经常开裂 ,据分析 ,开裂的主要原因为 :水质、水处理系统及其运行过程中在锅炉系统的内部产生点蚀及局部结垢后 ,部位具有较高的热阻 ,锅炉管外壁温度不均匀 ;同时 ,冷却壁急冷急热现象频繁 ,容易在冷却壁的最薄弱处产生裂纹。处理方式为在锅炉系统中增设加药计量泵 ,连续定量加入除氧缓蚀剂及阻垢剂 ,避免锅炉管内结垢及产生点蚀 ,进而避免了锅炉管外壁温度不均匀现象的产生 ,从根本上解决了烟道冷却壁经常开裂的问题     

择优蚀坑表征立方晶系冷轧电工硅钢取向性

为确定电工硅钢的晶粒取向性,应用蚀坑技术研究了冷轧无取向硅钢、取向硅钢因择优腐蚀所形成的蚀坑与晶粒取向的关系,分析了{100}面系蚀坑形貌的演变过程,从晶体学角度建立了蚀坑形貌与晶面指数的对应关系.结果发现:无取向硅钢形成不同形貌的蚀坑,其晶面指数为(001)、(011)和(111),或是由它们演变形成的其他晶面指数;取向硅钢形成的蚀坑为同一类型,晶面指数为(011)或由其演变形成的其他晶面指数;晶界也会形成蚀坑,其形貌与相邻晶粒间的取向差有关,取向差大,形成{100}、{110}和{111}面系的蚀坑,取向差小,形成{110}面系的蚀坑.取向硅钢的蚀坑分布具有连续性,晶界的存在并不改变蚀坑的基本特征;取向硅钢蚀坑的底棱相互平行,相差不超过5°,底棱延伸方向与硅钢的轧制方向即[001]方向一致,偏离角度不超过5°.