多足化合物的分子内激基缔合物形成及pH对其荧光的影响

研究了含萘脲基多足化合物溶液的稳态和瞬态光物理行为,由于分子内不同足间脲基的相互作用干扰了萘基的π-π叠合,使分子内萘基的激基缔合物生成受到影响,实验表明：由于三足化合物存在着给电子叔胺基因,因此当萘基被激发时,可因分子内的光诱导电子转移而导致荧光猝灭,正因如此,在三足化合物归一化后的稳态光谱中激基缔合物的发光强度很弱,用皮秒级单光子记数技术测得该化合物的瞬态荧光为三指数衰变过程,其中最长寿命的物种,即属于生成激基缔合物后再分解为萘激发态的部分仅占总量的4％,与稳态的结果相一致,工作表明对这类可用作荧光化学敏感器的三足化合物,如利用其激基缔合物的强度变化为其识别外来物种的敏感部位并不适合,相反。如引入的外来物种能影响化合物的分子内光诱导电子转移,进而影响萘基的发光强度,则是一较好的判别外来物种是否已进入主体的标志。     

Functionalization of Polymer Surfaces Using Excimer VUV Systems and Silent Discharges. Application to Electroless Metallization

New approaches for electroless plating of nonconductive polymers or polymer-based materials are described. In this work, polyimide substrates were surface-functionalized (i) in nitrogenated (ammonia at reduced pressure) and oxygenated (air at atmospheric pressure) atmospheres under assistance of vacuum-ultraviolet (VUV) irradiation (use of a xenon silent discharge excimer source) or (ii) directly in air at atmospheric pressure using a dielectric-barrier discharge (DBD) device. After functionalization, the substrates were “activated” by dipping in a dilute acidic PdCl₂ solution or by spin-coating of a thin metal-organic film (from a solution of palladium acetate (PdAc) in chloroform). The catalytic activity of the so-deposited palladium species toward the electroless deposition of nickel was studied before and after a VUV post-irradiation (in air at atmospheric or reduced pressure) with a view to understanding better the role of the reducer (sodium hypophosphite) within the electroless bath.

This work confirms the specific interest of grafting nitrogenated functionalities onto polymer surfaces for attaching covalently the palladium-based catalyst (in particular in the case of the PdCl₂ route), forming thus strong Pd - N - C bonds at the metal/polymer interface. This results from the strong chemical affinity of palladium toward nitrogen. On the other hand, when oxygenated functionalities are surface-grafted, the conventional two-step procedure using SnCl₂ and PdCl₂ solutions can be proposed due to the strong chemical affinity of tin toward oxygen. The Ni deposits obtained under these different conditions pass the standard Scotch^®-tape test and, therefore, exhibit a good practical adhesion. For this same purpose, it is interesting to note that the DBD treatment operating in air at atmospheric pressure causes an increase of the surface roughness and, therefore, an improvement in adhesion of metallic films when their initiation is catalyzed through the PdAc route. In addition, this work demonstrates that extensive research still has to be performed to understand and improve the Ni/polymer adhesion when the PdAc route associated with a VUV irradiation is considered.     

Evaluation of pressure-sensitive tape adhesion and backing directionality by excimer laser methods

The effects of 248 nm KrF excimer laser irradiation on a pressure-sensitive adhesive tape bonded to a glass substrate were investigated as a possible method to evaluate the quality of adhesion, as well as the directionality induced during manufacture. The model pressure-sensitive tape consisted of biaxially-oriented polypropylene (PP) tape coated with a hot-melt rubber resin. Analysis of the front-shot experiments, which were performed by irradiation through the PP backing, allowed correlation between the excimer laser irradiation-induced detachment and the peel adhesion strength. For this purpose, peel tests were performed before and after laser shots. The directionality induced during manufacture resulted in a more ablated area in the strength direction than in the transverse direction when the bonded tapes were irradiated with an elliptically-shaped laser beam above the ablation threshold. A correlation was found between the detachment bubbles created by irradiation below the ablation threshold and their respective peel adhesion values, which allows us to evaluate the quality of adhesion for pressure-sensitive tapes. Thus, a method to evaluate the quality of adhesion using an excimer laser is proposed based on the findings of this work.     

激光表面工程的进展及应用

从激光表面工程的技术特点及先进制造业发展对激光表面工程技术的需求出发,论述了在纳米表面工程、绿色再制造、复合表面工程、半导体激光加工、光纤激光加工、准分子激光表面工程、集成化激光加工及智能制造和柔性激光加工等方面激光表面工程的发展趋势。     

紫外反射镜的研制

随着紫外大功率准分子激光器的发展,金属反射镜已不能满足要求,所以必须研制低损耗的全介质反射镜。本文描述了波长350nm(XeF)、308nm(XeCl)、248nm(KrF)和193nm(ArF)四种准分子激光反射镜的制备技术,其反射率分别达到99.7％、99.5％ 、98％和96％。在波长308nm,反射镜的激光破坏阈值达8J/cm~2以上。     

Anodic Films on Aluminium and its Alloys for Protection against Corrosion

The effect of periodic reversal of current upon concentration over-potential and current efficiencies in electrolysis has been investigated for a metal depositon reaction which is purely diffusion-controlled. In the cathodic part of the cycle the onset of limiting diffusion conditions is deferred, and the current efficiency and average rate of metal deposition are increased. The magnitude of the effect depends upon the ratio of the quantities of electricity passed in anodic and cathodic pulses, and it is greatest under conditions such that diffusion away from the electrode of anodically-formed ions is minimised. Quantitative theoretical treatment is possible in a limiting case to which actual experimental results approximate. Supplementary experiments have been carried out in more complex cases of metal deposition.     

Laser-Enhanced Gas Phase Surface Modifications of Teflon AF1600 for Increased Copper Adhesion

Multilevel interconnect devices, made of alternating layers of a low permittivity polymer (e.g., Teflon AF1600^TM) and a low resistivity metal (e.g., copper), are increasingly being used in microelectronics in order to decrease the RC signal transmission time delay. The mechanical stability of the multilevel interconnects is related to the adhesion developed at the metal-dielectric interface. Since Cu/Teflon AF1600 adhesion is moderate and may not satisfy the requirements of the microelectronics industry, new treatments of the fluoropolymer surface are needed to improve it. In this note, we present several surface modifications, such as the formation of reactive sites during intense X-ray exposure, and S- or N-grafting, activated by UV radiation in the presence of H₂S and NH₃; copper is well known to react with both thiols (R—SH) and amines (R—NH₂) to form strong bonds. Both X-ray exposure and N-grafting lead to enhanced adhesion.     

Process study and optimization for fabrication of poly‐Si thin‐film transistors on plastic substrates

Abstract— A complete poly‐Si thin‐film transistor (TFT) on plastic process has been optimized to produce TFT arrays for active‐matrix displays. We present a detailed study of the poly‐Si crystallization process, a mechanism for protecting the plastic substrate from the pulsed laser used to crystallize the silicon, and a high‐performance low‐temperature gate dielectric film. Poly‐Si grain sizes and the corresponding TFT performance have been measured for a range of excimer‐laser crystallization fluences near the full‐melt threshold, allowing optimization of the laser‐crystallization process. A Bragg reflector stack has been embedded in the plastic coating layers; its effectiveness in protecting the plastic from the excimer‐laser pulse is described. Finally, we describe a plasma pre‐oxidation step, which has been added to a low‐temperature (<100°C) gate dielectric film deposition process to dramatically improve the electrical properties of the gate dielectric. These processes have been integrated into a complete poly‐Si TFT on plastic fabrication process, which produces PMOS TFTs with mobilities of 66 cm² /V‐sec, threshold voltages of ?3.5 V, and off currents of approximately 1 pA per micron of gate width.     

ⅡB族同核准分子Hg2226.2nm漫射带研究

本文报导在高纯Ｈｇ蒸气石英放电管中首次观测到峰值位于２２６．２ｎｍ左右属于Ｈｇ２准分子ＧＯ＾＋ｕ→ＸＯ＾＋ｇ束缚→自由跃迁的漫射带辐射，实验测量了漫射带强度随放电电流、气体温度和密度的变化关系，获得漫射带最大信号输出的工作参量。     

准分子激光对钛宝石辐照作用的研究

采用波长为193 nm的ArF准分子激光对钛宝石进行辐照,对比辐照前后的吸收光谱,218 nm处的吸收增加幅度明显大于193 nm和266 nm的吸收峰.通过对不同品质因素(FOM)值样品在420 nm处的荧光强度检测,发现FOM值随荧光强度减小而增大,对比钛宝石样品在准分子激光辐照前后的420 nm荧光谱,可以发现荧光强度明显降低.在检测样品的电子顺磁共振(EPR)谱后发现,Ti3 离子的电子顺磁共振信号在辐照后强度明显增强.表明钛宝石在准分子激光辐照过程中有Ti4 离子向Ti3 离子转变趋势.