基于聚合物电介质的并五苯场效应晶体管

采用顶接触结构分别在SiO2、聚甲基丙烯酸甲酯(PMMA)绝缘层上制备了以并五苯为有源层的两种有机场效应晶体管(OFET),其中SiO2绝缘层采用热生长法制备,PMMA绝缘层采用溶液旋涂法制备。与常规基于无机绝缘层的器件相比,采用聚合物为绝缘层后,不但器件的制作工艺简化和成本降低,而且器件性能大幅提高,经测试,器件的迁移率提到0.153cm2/Vs,而阈值电压降低6V。采用原子力显微镜(AFM)、X射线衍射(XRD)等对器件性能提高的原因进行了详细分析。     

Proton irradiation damage mechanism of the InAlAs／InGaAs／InAlAs quantum well

InP-based high electron mobility transistors (HEMT) have shown a great potential for national defense and satellite radar in space radiation environment applications. This paper studies the proton radiation damage mechanism of its critical structure InAlAs／InGaAs／InAlAs quantum well. The proton projection range and vacancy defect information are obtained at different incident proton energies of 50keV, 75keV and 200keV by SRIM software. With the increase of proton energy, the proton injection depth is increasing and eventually protons pass through the material layers. Besides, the proton radiation induced vacancy defects numbers around hetero-junction increase first and decrease subsequently, and As vacancies are the main proton radiation induced defects. In addition, non-ionizing energy loss (NIEL) of In_0.52Al_0.48As and In_0.53Ga_0.47As material is computed under different incident proton energies by the analytical model. The change trend of NIEL is identical to the induced vacancy numbers, namely, NIEL first increases and then decreases as the incident proton energy increases. Finally the degrading effect of the radiation-induced As defect is detected in the two-dimensional electron gas in the quantum well, which confirms that the major proton radiation damage mechanism of the quantum well is the induced vacancy defects by NIEL.     

应用于电磁超声的DE类功率放大器驱动电路设计

为了进一步增强电磁超声激励源的激发效能,提高电磁超声换能器的工作效率,基于射频技术提出了一种DE类射频功率放大器,通过采用隔离电源方法,有效地解决了高边金属-氧化物半导体场效应晶体管(MOSFET)的“浮地”问题,实现了高频隔离.通过分析MOSFET开关工作状态及控制特性,确立了MOSFET开关的基本工作过程,从而建立了一种MOSFET驱动电路设计方法.通过对关键元件的选型设计与算法研究,构建了DE类功率放大器的驱动电路.实验结果表明:设计的MOSFET驱动电路的输出信号电压幅值为13.4V,占空比50％,频率为1MHz,输出信号稳定,实现了对MOSFET的可靠驱动,能够满足实际应用.     

具有高频高压大电流优值的超结集电区SiGe HBT

为了在兼顾特征频率( fT )和电流增益(β)的情况下有效提高器件的击穿电压( BVCBO/BVCEO ),利用SILVACO TCAD建立了npn型超结集电区SiGe异质结双极晶体管( heterojunction bipolar transistor,HBT)的器件模型.研究表明：通过在集电结空间电荷区( collector-base space charge region,CB SCR)内引入p型超结层可有效降低“死区”内的电场强度,使较高的电场强度转移至“死区”外较深的CB SCR内,进而在几乎不增加CB SCR宽度的情况下抑制碰撞电离,达到提高击穿电压、改善fT和β的目的.随着p型超结层厚度( dp )的增加,击穿电压BVCBO和BVCEO的改善也越明显.但dp值需优化,较大的dp值将引发Kirk效应,大幅降低器件的fT和β.进一步通过优化p型超结层的dp值,设计出一款dp为0.2μm且具有高频高压大电流优值( fT ×BVCEO ×β)的新型超结集电区SiGe HBT.结果表明：与传统SiGe HBT相比,新器件的fT ×BVCEO ×β优值改善高达35.5%,有效拓展了功率SiGe HBT的高压大电流工作范围.     

电磁超声相控阵激励源高频隔离驱动电路

为了进一步提高电磁超声相控阵激励源的工作效率,基于半桥拓扑放大结构提出了一种电磁超声相控阵激励源高频隔离驱动电路的设计方法.根据金属氧化物半导体场效应晶体管(metal oxide semiconductor field effect transistor,MOSFET)的简化模型,分析了MOSFET在开通和关断过程中的开关损耗,从而给出了高频隔离驱动电路所必须满足的条件.通过采用光纤器件隔离脉冲信号和DC-DC隔离电源对参考电位进行转换,有效解决了驱动电路的高频"浮栅"问题,并利用RC微分电路和施密特反相器设计了驱动信号死区时间可调电路.实验结果表明:设计的驱动电路能够输出频率为1.1 MHz、死区时间为0.32μs、驱动电压为18.8 V、占空比为26%的互补驱动信号,并且在驱动MOSFET栅极的实际应用中,有效降低了功率开关管的功率损耗.     

Thin‐film transistor mobility limits considerations

The mobility limiting scattering mechanisms for amorphous semiconductors and polar polycrystalline semiconductors are studied in the context of developing new high‐performance thin‐film transistor (TFT) channel layer materials for large‐area electronics. A physics‐based model for carrier transport in an amorphous semiconductor is developed to estimate the mobility limits of amorphous semiconductor TFTs. The model involves band tail state trapping of a diffusive mobility. Simulation reveals a strong dependence on the band tail density of states. This consideration makes it difficult to realize a high‐performance p‐type oxide TFT. A polar crystalline semiconductor may offer a higher mobility but is fundamentally limited by polar optical phonon scattering. Any crystalline TFT channel layer for practical large‐area applications will not be a single crystal but polycrystalline, and therefore, grain size and grain boundary‐dependent scattering will further degrade the transport properties.     

Instability of light illumination stress on amorphous In–Ga–Zn–O thin‐film transistors

Amorphous In–Ga–Zn–O thin‐film transistors (TFTs) have attracted increasing attention due to their electrical performance and their potential for use in transparent and flexible devices. Because TFTs are exposed to illumination through red, green, and blue color filters, wavelength‐varied light illumination tests are required to ensure stable TFT characteristics. In this paper, the effects of different light wavelengths under both positive and negative V_GS stresses on amorphous In–Ga–Zn–O TFTs are investigated. The TFT instability that is dependent on optical and electrical stresses can be explained by the charge trapping mechanism and interface modification.     

基于ISFET的农药检测生物传感技术

随着微电子、生物技术的发展,离子敏场效应晶体管(ISFET)生物传感技术已应用于农药检测,并显示出较好的优越性,而我国对基于ISFET的农药检测生物技术研究尚未展开。简单介绍了基于IS-FET的生物传感器的结构、原理,重点探讨了其在农药检测方面的研究应用,分析了ISFET生物传感器存在的问题与未来的发展。     

光子“四端管”模型实验研究及其应用──新事滤波器的模型研究

在文献［１］的积分型光子“晶体管”的模型研究的基础上,利用螺塞喃光致色变材料进行了积分型“光子四端管”的模型实验研究,并对其应用器件之一——新事滤波器进行了详细的模型论证与研究。     

Biomolecules-Incorporated Metal-Organic Frameworks Gated Light-Sensitive Organic Photoelectrochemical Transistor for Biodetection

Incorporating biomolecules into metal-organic frameworks (MOFs) as exoskeletons to form biomolecules-MOFs biohybrids has attracted great attention as an emerging class of advanced materials. Organic devices have been shown as powerful platforms for next-generation bioelectronics, such as wearable biosensors, tissue engineering constructs, and neural interfaces. Herein, biomolecules-incorporated MOFs as innovative gating module is realized for the first time, which is exemplified by biocatalytic precipitation (BCP)-oriented horseradish peroxidase (HRP)-embedded zeolitic imidazolate framework-90 (HRP@ZIF-90)/CdIn₂S₄ gated organic photoelectrochemical transistor under light illumination. In connection to a sandwich immunocomplexing targeting the model analyte human IgG, the IgG-dependent generation of H₂O₂ and the tandem HRP-triggered BCP reaction can cause the in situ blocking of the pore network of ZIF-90, leading to variant gating effect with corresponding responses of the device. This representative biodetection achieved good analytical performance with a wide linear range and a low detection limit of 100 fg mL⁻¹. In the view of the plentiful biomolecule-MOF complexes and their potential interactions with organic systems, this study provides a proof-of-concept study for the generic development of biomolecules-MOFs-gated electronics and beyond.