显示器行输出管损坏的原因分析及设计改进

行输出管损坏是显示器的高发故障，分析了因电源电压过高或逆程电容容量下降引起行电压过高或因行推动功率不足引起行输出管严重发热等最终导致行输出管损坏的主要原因，指出了更换行输出管要注意的要点，并针对手致行输出管损坏的主要原因，提出了通过改进设计减少故障发生的方法，改进后的显示器行输出管的损坏率将大大降低。     

纳米电子器件的研究进展与军事应用前景

首先,分析了纳米电子器件碳纳米管、单电子晶体管的结构特点及其应用;然后,指出了碳纳米管、单电子晶体管应用中有待解决的问题;最后,综合阐述了纳米电子学的纳米技术在军事及航天领域中的应用前景。     

Study on the instability of organic field-effect transistors based on fluorinated copper phthalocyanine

The effects of positive and negative gate-bias stress on organic field-effect transistors (OFET) based on tantalum (Ta)/tantalum pentoxide (Ta₂O₅)/fluorinated copper phthalocyanine (F₁₆CuPc) structure are investigated as a function of stress time and stress temperature. It is shown that gate-bias stress induces a parallel threshold voltage shift (ΔV_T) of OFETs without changes of field-effect mobility μ_EF and sub-threshold slope (ΔS). The ΔV_T is observed to be logarithmically dependent on time at high gate-bias appropriate to OFET operation. More importantly, the shift is directional, namely, be large shift under positive stress and almost do not move under negative stress. The threshold voltage shift is temperature dependent with activation energy of 0.51 eV. We concluded that threshold voltage shift of the OFET with F₁₆CuPc as active layer is due to charge trapping in the insulator in which trapped carriers have redistribution.     

A novel polarizer‐free dye‐doped polymer‐dispersed liquid crystal for reflective TFT displays

Abstract— A novel preparation method for dichroic dye‐doped polymer‐dispersed liquid crystals has been developed. This was achieved by creating a porous polymer matrix first by washing out the liquid crystal from a polymer‐dispersed liquid crystal (PDLC), which is then refilled with dye‐doped liquid crystal. Optimizing the liquid crystal used in the refilling results in decreased turn‐on voltage and faster response time. Poster‐standard reflectivity and newspaper‐standard contrast was demonstrated with a 3.8‐in. QVGA reflective TFT display with a drive voltage of 10 V.     

基于DMOS管的电荷灵敏前置放大器设计

提出了一种由DMOS场效应管构成的电荷灵敏前置放大器,可用于硅,Si(Li),CdZnTe及CsI探测器。该前置放大器采用不同于传统的阻容反馈式的电路结构,完全使用MOS管搭建,该前放的设计完成为设计实现ASIC电路准备了技术基础。由Multisi m仿真结果看出该电荷灵敏前置放大器输出信号上升时间小于15ns,并且具有很好的稳定性。     

一个机组供电的晶体管稳流电源

1983年我们制作了一台由机组供电的晶体管稳流电源,取代原苏制BT-4稳流装置,作为ЭГ-2.5质子静电加速器分析磁铁的激磁电源。主要技术指标为:(1)额定输出直流电压100 V;(2)额定输出直流电流30 A;(3)电流调节范围0—30 A;(4)电流稳定度为±1.4×10~(-5)(当负载变化±10%时),±1.0×10~(-5)(当电网电压变化±10%时);(5)长时间漂移为2.3×10~(-5)/h,5.26×10~(-5)/8 h;(6)电流纹波为8.7×10~(-5)。     

InP/InGaAs HBT高频放大器稳定性分析

根据异质结双极晶体管(HBT)的实际结构提出高频小信号电路模型,以此模型用于共射放大电路为出发点,从理论上阐明了高频放大电路产生不稳定的原因,分析了端接电阻的稳定方法,借助matlab快速确定出稳定电阻的取值范围,其理论计算与仿真有很好的一致.     

Back‐channel‐etched thin‐film transistor using c‐axis‐aligned crystal In–Ga–Zn oxide

Our crystalline In–Ga–Zn oxide (IGZO) thin film has a c‐axis‐aligned crystal (CAAC) structure and maintains crystallinity even on an amorphous base layer. Although the crystal has c‐axis alignment, its a‐axis and b‐axis have random arrangement; moreover, a clear grain boundary is not observed. We fabricated a back‐channel‐etched thin‐film transistor (TFT) using the CAAC‐IGZO film. Using the CAAC‐IGZO film, more stable TFT characteristics, even with a short channel length, can be obtained, and the instability of the back channel, which is one of the biggest problems of IGZO TFTs, is solved. As a result, we improved the process of manufacturing back‐channel‐etched TFTs.     

具有高频高压大电流优值的超结集电区SiGe HBT

为了在兼顾特征频率( fT )和电流增益(β)的情况下有效提高器件的击穿电压( BVCBO/BVCEO ),利用SILVACO TCAD建立了npn型超结集电区SiGe异质结双极晶体管( heterojunction bipolar transistor,HBT)的器件模型.研究表明：通过在集电结空间电荷区( collector-base space charge region,CB SCR)内引入p型超结层可有效降低“死区”内的电场强度,使较高的电场强度转移至“死区”外较深的CB SCR内,进而在几乎不增加CB SCR宽度的情况下抑制碰撞电离,达到提高击穿电压、改善fT和β的目的.随着p型超结层厚度( dp )的增加,击穿电压BVCBO和BVCEO的改善也越明显.但dp值需优化,较大的dp值将引发Kirk效应,大幅降低器件的fT和β.进一步通过优化p型超结层的dp值,设计出一款dp为0.2μm且具有高频高压大电流优值( fT ×BVCEO ×β)的新型超结集电区SiGe HBT.结果表明：与传统SiGe HBT相比,新器件的fT ×BVCEO ×β优值改善高达35.5%,有效拓展了功率SiGe HBT的高压大电流工作范围.     

柔性非晶InGaZnO薄膜晶体管栅绝缘层的研究

采用磁控溅射方法, 在聚酰亚胺薄膜上室温制备了非晶铟镓锌氧 (a-IGZO) 柔性薄膜晶体管 (TFT) 。其中, 栅绝缘层选择了不同厚度比例的氧化硅 (SiO_x) 与氧化坦 (TaO_x) 薄膜的搭配, 对比研究了不同栅绝缘层结构的薄膜特性以及所对应的柔性TFT器件的操作特性和偏压稳定性。实验结果表明, TaO_x的成膜速率明显高于SiO_x;随着TaO_x所占比例的增加, 栅绝缘层表面粗糙度降低, 介电常数显著提高。以300nm厚TaO_x搭配300nm厚SiO_x为例, 栅绝缘层相对介电常数可以达到10, 对应的a-IGZOTFT表现出了更高的的开态电流和更低的阈值电压, 但是器件漏电流略有增加, 正偏压稳定性也会有所下降。