A review of silicon-based wafer bonding processes,an approach to realize the monolithic integration of Si-CMOS and Ⅲ-Ⅴ-on-Si wafers

The heterogeneous integration of Ⅲ-Ⅴ devices with Si-CMOS on a common Si platform has shown great promise in the new generations of electrical and optical systems for novel applications,such as HEMT or LED with integrated control cir-cuitry.For heterogeneous integration,direct wafer bonding(DWB)techniques can overcome the materials and thermal mis-match issues by directly bonding dissimilar materials systems and device structures together.In addition,DWB can perform at wafer-level,which eases the requirements for integration alignment and increases the scalability for volume production.In this paper,a brief review of the different bonding technologies is discussed.After that,three main DWB techniques of single-,double-and multi-bonding are presented with the demonstrations of various heterogeneous integration applications.Mean-while,the integration challenges,such as micro-defects,surface roughness and bonding yield are discussed in detail.     

在硅片上电沉积不同形貌的ZnO纳米结构的研究

采用简单的电化学沉积方法,通过调节电解液浓度和pH值,在硅衬底上实现了ZnO纳米结构的形貌控制。通过X射线衍射、扫描电镜和光致发光谱等表征手段对不同形貌的ZnO纳米结构进行了研究。研究发现,通过调节沉积条件,可以获得纳米棒、纳米簇丛和纳米片等不同形貌的ZnO纳米结构。其中,溶液pH值是纳米ZnO从一维结构到二维结构转变的关键因素。当pH值为12时,所获得的纳米ZnO为二维片状结构。光致发光谱显示二维ZnO纳米片的紫外本征峰相对于一维ZnO纳米棒发生了明显的蓝移,并且可见区的发光峰大大降低。这一结构将在光电器件、传感器等领域有很好的应用前景。     

提高“猫眼”探测系统自动对焦性能的方法研究

为提高自研"猫眼"探测系统的自动对焦性能,对主动激光图像散斑噪声、自动对焦窗口和视场变化三个对焦性能影响因素进行分析,分别提出了自动对焦改进算法及策略。实验证明,改进后,探测系统自动对焦性能明显提升,为探测系统后续预警提供了清晰准确的威胁目标激光图像。     

基于Laplace算子和灰色理论的热红外影像边缘检测

由于红外热像仪采集的热红外影像存在大量的噪声、边缘信息模糊难提取,因此,提出了一种基于Laplace算子和灰色关联度相结合的边缘检测方法.该方法首先引进数学形态学对含有噪声的热红外影像进行形态学滤波,然后利用8邻域的Laplace算子作为参考序列,计算参考序列与系统序列之间的关联度得出关联度矩阵,再给定阈值判断是否为边缘点,最后细化影像.基于MATLAB进行仿真实验,结果表明:该算法对具有噪声的热红外影像具有较好的抗噪效果,能检测出传统方法不能提取的边缘细节信息,通过调整阈值可以控制检测的边缘信息量,是一种较好的边缘检测方法.     

Effect of firing atmosphere on air-fireable glass-free electrically conductive thick film

The firing atmosphere (air, oxygen, and argon) was found to affect the electrical and mechanical properties of an air-fireable electrically conductive glass-free silver-based thick film. For the optimum firing temperature of 930°C, air results in the lowest resistivity, but a minor amount of pinholes; oxygen results in the largest thickness, the smoothest surface, and no pinhole; and argon results in the highest resistivity, large pinholes, the smallest thickness, vanishing of macroscopic parts of the film, and the poorest scratch resistance. Argon gives higher resistivity than air or oxygen at essentially all firing temperatures.     

NH3掺杂ZnO薄膜的生长及特性

采用金属有机物化学气相沉积(MOCVD)方法,以NH3作为N元素的掺杂源,在蓝宝石衬底上生长了掺N的ZnO薄膜.利用X射线衍射、X射线光电子能谱、原子力显微镜、霍尔测量及先致荧光光谱等测试技术分析了薄膜的结晶性质、表面形貌、光电性质及掺杂元素N的价键特性.结果表明,NH3 的掺杂会影响ZnO薄膜的结晶特性,薄膜虽然仍是(002) 面择优取向生长,但同时也出现了ZnO的(100)及(101)面生长.在薄膜生长时N元素掺入到ZnO薄膜当中,并形成N-Zn、N-H、N-C键.C、H杂质的存在,使掺N ZnO薄膜表现为高阻,同时也影响了薄膜的光致发光特性.     

用表面等离子体谐振（SPR）测量物质的折射率

本文介绍一种用表面等离子体谐振间接测量物质折射率的新方法。从理论上对这种方法作了论证,运用这种方法对ＬＢ膜做了测试实验,推算出其折射率,并且分析了这种方法适用特点。     

固态介质薄膜的电击穿场强

对于微电子和光电子元器件及其集成电路来讲,固态介质薄膜是一类重要的基础材料。它们的电击穿场强是一个特殊的特性参数。本文从理论上论述了这类薄膜的电击穿场强,并概述了现在所用的测试方法和多位研究者得出的测试结果。此外, 文中还分类提出了这类薄膜内的弱点类型。     

利用微锥膜改善反射式液晶显示器件的视角

提出了一种可以改善反射式彩色液晶显示视角的微锥结构膜。模拟计算结果表明,当光从微锥的底部人射时,该膜起到准直作用,当光从微锥的顶部入射时,该膜起到散射作用。利用微锥膜可显著改善反射式干涉滤光膜的视角依赖性。由于微锥膜的作用不依赖了液晶盒结构,所以,可对多种结构的反射式彩色液晶显示有效。     

H2 plasma treatment at the p/i interface of a hydrogenated amorphous Si absorption layer for high‐performance Si thin film solar cells

Plasma treatment (PT) of the buffer layer for highly H₂‐diluted hydrogenated amorphous silicon (a‐Si:H) absorption layers is proposed as a technique to improve efficiency and mitigate light‐induced degradation (LID) in a‐Si:H thin film solar modules. The method was verified for a‐Si:H single‐junction and a‐Si:H/microcrystalline silicon (µc‐Si:H) tandem modules with a size of 200 × 200 mm² (aperture area of 382.5 cm²) under long‐term light exposure. H₂ PT at the p/i interface was found to eliminate non‐radiative recombination centers in the buffer layer, and plasma‐enhanced chemical vapor deposition at low radio‐frequency power was found to suppress the generation of defects during the growth of a‐Si:H absorption layers on the treated buffer layers. With optimized H₂ PT of the a‐Si:H single‐junction module, the stabilized short circuit current and fill factor increased, and the stabilized open circuit voltage moves beyond its initial value. The results demonstrate 7.7% stabilized efficiency and 10.5% LID for the a‐Si:H single‐junction module and 10.82% stabilized efficiency and 7.76% LID for the a‐Si:H/µc‐Si:H tandem module. Thus, the growth of an a‐Si:H absorption layer on a H₂ PT buffer layer can be considered as a practical method for producing high‐performance Si thin film modules. Copyright © 2012 John Wiley & Sons, Ltd.